KR970018537A - Capacitor Formation Method for Semiconductor Device - Google Patents
Capacitor Formation Method for Semiconductor Device Download PDFInfo
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- KR970018537A KR970018537A KR1019950031092A KR19950031092A KR970018537A KR 970018537 A KR970018537 A KR 970018537A KR 1019950031092 A KR1019950031092 A KR 1019950031092A KR 19950031092 A KR19950031092 A KR 19950031092A KR 970018537 A KR970018537 A KR 970018537A
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- semiconductor device
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Abstract
본 발명은 탄탈륨 화합물을 전극으로 사용하는 반도체 소자의 커패시터 형성방법에 관한 것으로서, 실리콘 기판상에 이온 주입을 실시하고 필드 산화막으로 격리한 후 Ta 화합물을 사용하여 하부전극을 형성하는 단계; 상기 Ta 화합물로 형성된 하부전극의 표면을 산화시켜 TaON의 강한 장벽층 금속 전극을 얻거나 TaO의 얇은 산화막의 유전막을 얻는 단계; Ta2O5를 도포하여 커패시터의 유전체층을 형성하는 단계; Ta 화합물을 사용하여 커패시터의 상부전극을 형성하는 단계; BPGS 또는 USG로 평탄화한 후 콘택을 형성하고 금속 배선을 형성하는 단계를 포함함을 특징으로 한다. 본 발명에 의하면 장벽 금속으로 Ta 화합물을 Ta2O5유전막의 상하부 전극으로 사용함으로써 등가 산화막의 두께를 감소시킬 수 있다. 또한 하부전극 Ta 화합물 표면을 산화함으로써 강한 장벽층을 형성할 수 있고, Ta2O5를 도포하지 않은 상태에서도 TaO의 얇은 두께의 유전막을 확보하고, TaON을 형성하여 산소장벽 특성을 더욱 강화할 수 있다.The present invention relates to a method of forming a capacitor of a semiconductor device using a tantalum compound as an electrode, comprising: forming a lower electrode using a Ta compound after ion implantation on a silicon substrate and isolation with a field oxide film; Oxidizing the surface of the lower electrode formed of the Ta compound to obtain a strong barrier layer metal electrode of TaON or a dielectric film of a thin oxide film of TaO; Applying Ta 2 O 5 to form a dielectric layer of the capacitor; Forming an upper electrode of the capacitor using the Ta compound; Planarizing with BPGS or USG, and then forming a contact and forming a metal interconnect. According to the present invention, the thickness of the equivalent oxide film can be reduced by using the Ta compound as the upper and lower electrodes of the Ta 2 O 5 dielectric film as the barrier metal. In addition, a strong barrier layer can be formed by oxidizing the surface of the lower electrode Ta compound, and a TaO thin film can be secured even when Ta 2 O 5 is not applied, and TaON can be formed to further enhance oxygen barrier properties. .
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1A도 내지 제1E도는 본 발명에 따른 반도체 소자의 커패시터 형성방법을 설명하기 위해 도시한 단면도들이다.1A to 1E are cross-sectional views illustrating a method of forming a capacitor of a semiconductor device according to the present invention.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019950031092A KR970018537A (en) | 1995-09-21 | 1995-09-21 | Capacitor Formation Method for Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019950031092A KR970018537A (en) | 1995-09-21 | 1995-09-21 | Capacitor Formation Method for Semiconductor Device |
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KR970018537A true KR970018537A (en) | 1997-04-30 |
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KR1019950031092A KR970018537A (en) | 1995-09-21 | 1995-09-21 | Capacitor Formation Method for Semiconductor Device |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990055204A (en) * | 1997-12-27 | 1999-07-15 | 김영환 | Capacitor Formation Method of Semiconductor Device |
KR20010066386A (en) * | 1999-12-31 | 2001-07-11 | 박종섭 | Method of forming gate electrode of Flash memory |
KR100358066B1 (en) * | 1999-06-25 | 2002-10-25 | 주식회사 하이닉스반도체 | Method of manufacturing a capacitor in a semiconductor device |
KR100372644B1 (en) * | 2000-06-30 | 2003-02-17 | 주식회사 하이닉스반도체 | Method for manufacturing capacitor in nonvolatile semiconductor memory device |
US6734488B1 (en) | 1999-08-19 | 2004-05-11 | Renesas Technology Corp. | Semiconductor device and manufacturing method thereof |
KR100433041B1 (en) * | 2001-12-27 | 2004-05-24 | 동부전자 주식회사 | method for producting a capacitor of a semiconductor memory |
KR100468708B1 (en) * | 1998-03-23 | 2005-03-16 | 삼성전자주식회사 | Method for forming ferroelectric capacitor and ferroelectric capacitor thereof |
KR100482753B1 (en) * | 1999-11-09 | 2005-04-14 | 주식회사 하이닉스반도체 | Method of manufacturing a capacitor in a semiconductor device |
KR100618684B1 (en) * | 2000-06-01 | 2006-09-06 | 주식회사 하이닉스반도체 | CAPACITOR HAVING TaON DIELECTRIC LAYER IN SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
-
1995
- 1995-09-21 KR KR1019950031092A patent/KR970018537A/en not_active Application Discontinuation
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990055204A (en) * | 1997-12-27 | 1999-07-15 | 김영환 | Capacitor Formation Method of Semiconductor Device |
KR100468708B1 (en) * | 1998-03-23 | 2005-03-16 | 삼성전자주식회사 | Method for forming ferroelectric capacitor and ferroelectric capacitor thereof |
KR100358066B1 (en) * | 1999-06-25 | 2002-10-25 | 주식회사 하이닉스반도체 | Method of manufacturing a capacitor in a semiconductor device |
US6734488B1 (en) | 1999-08-19 | 2004-05-11 | Renesas Technology Corp. | Semiconductor device and manufacturing method thereof |
KR100482753B1 (en) * | 1999-11-09 | 2005-04-14 | 주식회사 하이닉스반도체 | Method of manufacturing a capacitor in a semiconductor device |
KR20010066386A (en) * | 1999-12-31 | 2001-07-11 | 박종섭 | Method of forming gate electrode of Flash memory |
KR100618684B1 (en) * | 2000-06-01 | 2006-09-06 | 주식회사 하이닉스반도체 | CAPACITOR HAVING TaON DIELECTRIC LAYER IN SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
KR100372644B1 (en) * | 2000-06-30 | 2003-02-17 | 주식회사 하이닉스반도체 | Method for manufacturing capacitor in nonvolatile semiconductor memory device |
KR100433041B1 (en) * | 2001-12-27 | 2004-05-24 | 동부전자 주식회사 | method for producting a capacitor of a semiconductor memory |
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