KR970018537A - Capacitor Formation Method for Semiconductor Device - Google Patents

Capacitor Formation Method for Semiconductor Device Download PDF

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Publication number
KR970018537A
KR970018537A KR1019950031092A KR19950031092A KR970018537A KR 970018537 A KR970018537 A KR 970018537A KR 1019950031092 A KR1019950031092 A KR 1019950031092A KR 19950031092 A KR19950031092 A KR 19950031092A KR 970018537 A KR970018537 A KR 970018537A
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South Korea
Prior art keywords
compound
capacitor
forming
electrode
semiconductor device
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KR1019950031092A
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Korean (ko)
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하정민
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김광호
삼성전자 주식회사
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Priority to KR1019950031092A priority Critical patent/KR970018537A/en
Publication of KR970018537A publication Critical patent/KR970018537A/en

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Abstract

본 발명은 탄탈륨 화합물을 전극으로 사용하는 반도체 소자의 커패시터 형성방법에 관한 것으로서, 실리콘 기판상에 이온 주입을 실시하고 필드 산화막으로 격리한 후 Ta 화합물을 사용하여 하부전극을 형성하는 단계; 상기 Ta 화합물로 형성된 하부전극의 표면을 산화시켜 TaON의 강한 장벽층 금속 전극을 얻거나 TaO의 얇은 산화막의 유전막을 얻는 단계; Ta2O5를 도포하여 커패시터의 유전체층을 형성하는 단계; Ta 화합물을 사용하여 커패시터의 상부전극을 형성하는 단계; BPGS 또는 USG로 평탄화한 후 콘택을 형성하고 금속 배선을 형성하는 단계를 포함함을 특징으로 한다. 본 발명에 의하면 장벽 금속으로 Ta 화합물을 Ta2O5유전막의 상하부 전극으로 사용함으로써 등가 산화막의 두께를 감소시킬 수 있다. 또한 하부전극 Ta 화합물 표면을 산화함으로써 강한 장벽층을 형성할 수 있고, Ta2O5를 도포하지 않은 상태에서도 TaO의 얇은 두께의 유전막을 확보하고, TaON을 형성하여 산소장벽 특성을 더욱 강화할 수 있다.The present invention relates to a method of forming a capacitor of a semiconductor device using a tantalum compound as an electrode, comprising: forming a lower electrode using a Ta compound after ion implantation on a silicon substrate and isolation with a field oxide film; Oxidizing the surface of the lower electrode formed of the Ta compound to obtain a strong barrier layer metal electrode of TaON or a dielectric film of a thin oxide film of TaO; Applying Ta 2 O 5 to form a dielectric layer of the capacitor; Forming an upper electrode of the capacitor using the Ta compound; Planarizing with BPGS or USG, and then forming a contact and forming a metal interconnect. According to the present invention, the thickness of the equivalent oxide film can be reduced by using the Ta compound as the upper and lower electrodes of the Ta 2 O 5 dielectric film as the barrier metal. In addition, a strong barrier layer can be formed by oxidizing the surface of the lower electrode Ta compound, and a TaO thin film can be secured even when Ta 2 O 5 is not applied, and TaON can be formed to further enhance oxygen barrier properties. .

Description

반도체 소자의 커패시터 형성방법Capacitor Formation Method for Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 내지 제1E도는 본 발명에 따른 반도체 소자의 커패시터 형성방법을 설명하기 위해 도시한 단면도들이다.1A to 1E are cross-sectional views illustrating a method of forming a capacitor of a semiconductor device according to the present invention.

Claims (5)

Ta 화합물을 전극으로 사용하는 반도체 소자의 커패시터 형성방법에 있어서, 실리콘 기판상에 이온 주입을 실시하고 필드 산화막으로 격리한 후 Ta 화합물을 사용하여 하부전극을 형성하는 단계; 상기 Ta 화합물로 형성된 하부전극의 표면을 산화시켜 TaON의 강한 장벽층 금속 전극을 얻거나 TaO의 얇은 산화막의 유전막을 얻는 단계; Ta2O5를 도포하여 커패시터의 유전체층을 형성하는 단계; Ta 화합물을 사용하여 커패시터의 상부전극을 형성하는 단계; BPGS(Boron Phosporus Siligate Glass) 또는 USG(Undoped Siligate Glass)로 평탄화한 후 콘택을 형성하고 금속 배선을 형성하는 단계를 포함함을 특징으로 하는 반도체 소자의 커패시터 형성방법.A method of forming a capacitor of a semiconductor device using a Ta compound as an electrode, the method comprising: implanting an ion on a silicon substrate, isolating a field oxide film, and then forming a lower electrode using the Ta compound; Oxidizing the surface of the lower electrode formed of the Ta compound to obtain a strong barrier layer metal electrode of TaON or a dielectric film of a thin oxide film of TaO; Applying Ta 2 O 5 to form a dielectric layer of the capacitor; Forming an upper electrode of the capacitor using the Ta compound; Forming a contact and forming a metal wiring after planarizing with BPGS (Boron Phosporus Siligate Glass) or USG (Undoped Siligate Glass). 제1항에 있어서, 상기 Ta 화합물은 TaN 또는 TaC 임을 특징으로 하는 반도체 소자의 커패시터 형성방법.The method of claim 1, wherein the Ta compound is TaN or TaC. 제1항에 있어서, 상기 Ta2O5는 PZT{(pb, Zr, Ti) oxide}, BST{(Ba, Sr, Ti) oxide} 등 금속 산화물의 고유전막을 사용함을 특징으로 하는 반도체 소자의 커패시터 형성방법.The semiconductor device of claim 1, wherein Ta 2 O 5 uses a high-k dielectric film of a metal oxide such as PZT {(pb, Zr, Ti) oxide}, BST {(Ba, Sr, Ti) oxide}. How to form a capacitor. 제1항에 있어서, 상기 Ta 화합물 전극 형성방법은 Ta 금속 티켓을 이용한 PVD 방법이거나, Ta(OC2H5)5와 같은 유기소스이거나 TaCl5 소스를 사용하는 CVD인 방법임을 특징으로 하는 반도체 소자의 커패시터 형성방법.The method of claim 1, wherein the Ta compound electrode forming method is a PVD method using a Ta metal ticket, an organic source such as Ta (OC 2 H 5 ) 5, or a CVD method using a TaCl 5 source. How to form a capacitor. 제1항에 있어서, 상기 커패시터 형태는 플래너(planar), 트렌치(trench), 스택(stack), 반구(Hemisphere), 핀(pin), 실린더(cylinder)형과 같은 3차원 구조를 비롯한 데서 이들의 복합형 등 다양한 종류의 커패시터임을 특징으로 하는 반도체 소자의 커패시터 형성방법.2. The method of claim 1, wherein the capacitor shape includes three-dimensional structures such as planar, trench, stack, hemisphere, pin and cylinder type. Capacitor formation method of a semiconductor device, characterized in that the capacitor of various types, such as a composite type.
KR1019950031092A 1995-09-21 1995-09-21 Capacitor Formation Method for Semiconductor Device KR970018537A (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990055204A (en) * 1997-12-27 1999-07-15 김영환 Capacitor Formation Method of Semiconductor Device
KR20010066386A (en) * 1999-12-31 2001-07-11 박종섭 Method of forming gate electrode of Flash memory
KR100358066B1 (en) * 1999-06-25 2002-10-25 주식회사 하이닉스반도체 Method of manufacturing a capacitor in a semiconductor device
KR100372644B1 (en) * 2000-06-30 2003-02-17 주식회사 하이닉스반도체 Method for manufacturing capacitor in nonvolatile semiconductor memory device
US6734488B1 (en) 1999-08-19 2004-05-11 Renesas Technology Corp. Semiconductor device and manufacturing method thereof
KR100433041B1 (en) * 2001-12-27 2004-05-24 동부전자 주식회사 method for producting a capacitor of a semiconductor memory
KR100468708B1 (en) * 1998-03-23 2005-03-16 삼성전자주식회사 Method for forming ferroelectric capacitor and ferroelectric capacitor thereof
KR100482753B1 (en) * 1999-11-09 2005-04-14 주식회사 하이닉스반도체 Method of manufacturing a capacitor in a semiconductor device
KR100618684B1 (en) * 2000-06-01 2006-09-06 주식회사 하이닉스반도체 CAPACITOR HAVING TaON DIELECTRIC LAYER IN SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990055204A (en) * 1997-12-27 1999-07-15 김영환 Capacitor Formation Method of Semiconductor Device
KR100468708B1 (en) * 1998-03-23 2005-03-16 삼성전자주식회사 Method for forming ferroelectric capacitor and ferroelectric capacitor thereof
KR100358066B1 (en) * 1999-06-25 2002-10-25 주식회사 하이닉스반도체 Method of manufacturing a capacitor in a semiconductor device
US6734488B1 (en) 1999-08-19 2004-05-11 Renesas Technology Corp. Semiconductor device and manufacturing method thereof
KR100482753B1 (en) * 1999-11-09 2005-04-14 주식회사 하이닉스반도체 Method of manufacturing a capacitor in a semiconductor device
KR20010066386A (en) * 1999-12-31 2001-07-11 박종섭 Method of forming gate electrode of Flash memory
KR100618684B1 (en) * 2000-06-01 2006-09-06 주식회사 하이닉스반도체 CAPACITOR HAVING TaON DIELECTRIC LAYER IN SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
KR100372644B1 (en) * 2000-06-30 2003-02-17 주식회사 하이닉스반도체 Method for manufacturing capacitor in nonvolatile semiconductor memory device
KR100433041B1 (en) * 2001-12-27 2004-05-24 동부전자 주식회사 method for producting a capacitor of a semiconductor memory

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