KR970018250A - Manufacturing Method of Semiconductor Power Switching Device - Google Patents

Manufacturing Method of Semiconductor Power Switching Device Download PDF

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Publication number
KR970018250A
KR970018250A KR1019950031389A KR19950031389A KR970018250A KR 970018250 A KR970018250 A KR 970018250A KR 1019950031389 A KR1019950031389 A KR 1019950031389A KR 19950031389 A KR19950031389 A KR 19950031389A KR 970018250 A KR970018250 A KR 970018250A
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KR
South Korea
Prior art keywords
forming
epitaxial layer
high concentration
manufacturing
power switching
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Application number
KR1019950031389A
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Korean (ko)
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KR100342586B1 (en
Inventor
최병하
현동호
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김광호
삼성전자 주식회사
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Priority to KR1019950031389A priority Critical patent/KR100342586B1/en
Publication of KR970018250A publication Critical patent/KR970018250A/en
Application granted granted Critical
Publication of KR100342586B1 publication Critical patent/KR100342586B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42304—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Abstract

본 발명은 콜렉터로 사용되는 고농도층 및 저농도층으로 구성된 기판상부로부터 콜렉터와는 다른 불순물로 확산된 베이스영역과 상기 베이스영역과는 다른 불순물로 베이스내에 형성된 에미터영역과 절연막의 일부의 창을 열어 각각의 전극과 접속시킨 바이폴라 트랜지스터에 관한 것으로 있어서, 콜렉터전극과 접속되는 고농도층이 N+와 N-로 형성된 기판으로 형성하며, 고농도의 N+를 매스크로 하여 저농도의 N-창을 통해 선택적 수명시간을 조절함으로써, 소자의 스윗칭속도를 향상시킨다.According to the present invention, a base region diffused from an impurity different from the collector and an emitter region formed in the base with an impurity different from the base region and a window of a part of the insulating film are opened from the upper portion of the substrate composed of a high concentration layer and a low concentration layer used as a collector. in that on each of the electrodes and that connect the bipolar transistor, the high concentration layer to be connected to the collector electrode N + and N - forming a substrate formed by a high concentration of the N + to mask N of the low-concentration-through window selectively life By adjusting the time, the switching speed of the device is improved.

Description

반도체 전력 스윗칭 소자의 제조방법Manufacturing Method of Semiconductor Power Switching Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 바람직한 실시예에 따른 전력 스윗칭 트랜지스터의 구조를 나타낸 단면도.1 is a cross-sectional view showing the structure of a power switching transistor according to a preferred embodiment of the present invention.

Claims (1)

반도체 전력 스윗칭 소자의 제조방법에 있어서; 고농도(N+)의 제1에피택셜 층과 두껍고 그리고 큰 비저항의 저농도(N-)의 제2에피택셜 층을 순차로 형성하는 공정과; 상기 제2에피택셜 층의 내부에 베이스와 에미터를 형성하고, 그 표면에 절연막(40)을 형성하는 공정과; 베이스 콘택(20b)과 에미터 콘택(30b)을 형성하고, 베이스 전극(20c)과 에미터 전극(30c)을 형성하는 공정과; 기판 뒷면의 고농도(N+)의 제1에피택셜 층을 소정의 간격으로 식각하는 것에 의해 다수의 창을 형성하여 제2에피택셜 층(10b)이 소정의 간격을 두고서 부분적으로 드러나도록 하는 공정과; 상기 다수의 창을 통하여 과잉 소수 캐리어의 수명시간 조절용 불순물을 상기 제2에피택셜 층(10b)의 일부 영역들에만 선택적 확산시키고, 상기 다수의 창을 통하여 상기 제1 및 제2에피택셜 층이 함께 접속되도록 콜렉터 전극(10c)을 형성하는 공정을 포함하는 반도체 전력 스윗칭 소자의 제조방법.A method of manufacturing a semiconductor power switching device; Sequentially forming a high concentration (N + ) first epitaxial layer and a thick and large resistivity low concentration (N − ) second epitaxial layer; Forming a base and an emitter in the second epitaxial layer and forming an insulating film on the surface thereof; Forming a base contact 20b and an emitter contact 30b, and forming a base electrode 20c and an emitter electrode 30c; Forming a plurality of windows by etching the high concentration (N + ) first epitaxial layer on the back side of the substrate at predetermined intervals so that the second epitaxial layer 10b is partially exposed at predetermined intervals; ; The plurality of windows selectively diffuse impurities for controlling the lifetime of the excess minority carriers to only a portion of the second epitaxial layer 10b, and the first and second epitaxial layers are together through the plurality of windows. A method for manufacturing a semiconductor power switching element comprising the step of forming a collector electrode (10c) to be connected. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950031389A 1995-09-22 1995-09-22 Method for manufacturing semiconductor power switching device KR100342586B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950031389A KR100342586B1 (en) 1995-09-22 1995-09-22 Method for manufacturing semiconductor power switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950031389A KR100342586B1 (en) 1995-09-22 1995-09-22 Method for manufacturing semiconductor power switching device

Publications (2)

Publication Number Publication Date
KR970018250A true KR970018250A (en) 1997-04-30
KR100342586B1 KR100342586B1 (en) 2002-11-02

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ID=37488308

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950031389A KR100342586B1 (en) 1995-09-22 1995-09-22 Method for manufacturing semiconductor power switching device

Country Status (1)

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KR (1) KR100342586B1 (en)

Also Published As

Publication number Publication date
KR100342586B1 (en) 2002-11-02

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