KR970018250A - Manufacturing Method of Semiconductor Power Switching Device - Google Patents
Manufacturing Method of Semiconductor Power Switching Device Download PDFInfo
- Publication number
- KR970018250A KR970018250A KR1019950031389A KR19950031389A KR970018250A KR 970018250 A KR970018250 A KR 970018250A KR 1019950031389 A KR1019950031389 A KR 1019950031389A KR 19950031389 A KR19950031389 A KR 19950031389A KR 970018250 A KR970018250 A KR 970018250A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- epitaxial layer
- high concentration
- manufacturing
- power switching
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims 3
- 239000004065 semiconductor Substances 0.000 title claims 3
- 239000012535 impurity Substances 0.000 claims abstract 3
- 239000000758 substrate Substances 0.000 claims abstract 3
- 239000000969 carrier Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Abstract
본 발명은 콜렉터로 사용되는 고농도층 및 저농도층으로 구성된 기판상부로부터 콜렉터와는 다른 불순물로 확산된 베이스영역과 상기 베이스영역과는 다른 불순물로 베이스내에 형성된 에미터영역과 절연막의 일부의 창을 열어 각각의 전극과 접속시킨 바이폴라 트랜지스터에 관한 것으로 있어서, 콜렉터전극과 접속되는 고농도층이 N+와 N-로 형성된 기판으로 형성하며, 고농도의 N+를 매스크로 하여 저농도의 N-창을 통해 선택적 수명시간을 조절함으로써, 소자의 스윗칭속도를 향상시킨다.According to the present invention, a base region diffused from an impurity different from the collector and an emitter region formed in the base with an impurity different from the base region and a window of a part of the insulating film are opened from the upper portion of the substrate composed of a high concentration layer and a low concentration layer used as a collector. in that on each of the electrodes and that connect the bipolar transistor, the high concentration layer to be connected to the collector electrode N + and N - forming a substrate formed by a high concentration of the N + to mask N of the low-concentration-through window selectively life By adjusting the time, the switching speed of the device is improved.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 본 발명의 바람직한 실시예에 따른 전력 스윗칭 트랜지스터의 구조를 나타낸 단면도.1 is a cross-sectional view showing the structure of a power switching transistor according to a preferred embodiment of the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950031389A KR100342586B1 (en) | 1995-09-22 | 1995-09-22 | Method for manufacturing semiconductor power switching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950031389A KR100342586B1 (en) | 1995-09-22 | 1995-09-22 | Method for manufacturing semiconductor power switching device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970018250A true KR970018250A (en) | 1997-04-30 |
KR100342586B1 KR100342586B1 (en) | 2002-11-02 |
Family
ID=37488308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950031389A KR100342586B1 (en) | 1995-09-22 | 1995-09-22 | Method for manufacturing semiconductor power switching device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100342586B1 (en) |
-
1995
- 1995-09-22 KR KR1019950031389A patent/KR100342586B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100342586B1 (en) | 2002-11-02 |
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