KR970018096A - Method for forming contact plug of semiconductor device - Google Patents
Method for forming contact plug of semiconductor device Download PDFInfo
- Publication number
- KR970018096A KR970018096A KR1019950029307A KR19950029307A KR970018096A KR 970018096 A KR970018096 A KR 970018096A KR 1019950029307 A KR1019950029307 A KR 1019950029307A KR 19950029307 A KR19950029307 A KR 19950029307A KR 970018096 A KR970018096 A KR 970018096A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- polysilicon
- doped polysilicon
- contact plug
- insulating film
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
반도체 장치의 도전층간의 상호접속을 위한 콘택 플러그 형성방법을 개시한다. 반도체 장치의 콘택 플러그 형성방법에 있어서, 하부 구조물이 형성된 반도체 기판상에 층간 절연막을 형성하는 단계; 상기 층간 절연막에 콘택 홀을 형성하는 단계; 상기 콘택 홀을 도핑된 폴리실리콘으로 채워서(filling) 콘택 플러그를 형성하는 단계; 상기 콘택 플러그된 도핑된 폴리 실리콘에 소정의 에너지로 불순물을 이온주입을 하는 단계; 상기 도핑된 폴리 실리콘에 이온 주입된 불순물과 폴리 실리콘이 결합하여 새로운 층을 형성하는 단계; 및 상기 층간 절연막과 새로이 결합된 층을 에치 저지대층으로 하여 도핑된 폴리 실리콘의 상부를 제거하는 것을 특징으로 하는 반도체 장치의 제조 방법을 제공한다.A method for forming a contact plug for interconnection between conductive layers of a semiconductor device is disclosed. A method of forming a contact plug in a semiconductor device, the method comprising: forming an interlayer insulating film on a semiconductor substrate on which a lower structure is formed; Forming a contact hole in the interlayer insulating film; Filling the contact hole with doped polysilicon to form a contact plug; Implanting impurities into the contact plugged doped polysilicon with a predetermined energy; Combining the doped polysilicon with ion implanted impurities and polysilicon to form a new layer; And removing the upper portion of the doped polysilicon by using a newly bonded layer as the etch stopper layer.
본 발명에 의하면, 폴리 실리콘과 층간절연막 새로이 결합된 층과의 선택비를 수십대 : 1로 유지할 수 있다. 따라서 충분한 식각을 통하여 콘택 플러그를 제외한 모든곳에 도핑된 폴리 실리콘을 제거할 수 있다.According to the present invention, the selectivity ratio between polysilicon and the newly interlayered insulating film can be maintained at several tens: one. Therefore, sufficient etching can remove polysilicon doped everywhere except the contact plug.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명에 의한 콘택 플러그 형성 방법을 공정 순서대로 나타낸 단면도들이다.2 is a cross-sectional view showing the contact plug forming method according to the present invention in the order of process.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950029307A KR970018096A (en) | 1995-09-07 | 1995-09-07 | Method for forming contact plug of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950029307A KR970018096A (en) | 1995-09-07 | 1995-09-07 | Method for forming contact plug of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970018096A true KR970018096A (en) | 1997-04-30 |
Family
ID=66596307
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950029307A KR970018096A (en) | 1995-09-07 | 1995-09-07 | Method for forming contact plug of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970018096A (en) |
-
1995
- 1995-09-07 KR KR1019950029307A patent/KR970018096A/en not_active Application Discontinuation
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WITN | Withdrawal due to no request for examination |