KR970017982A - Metal film formation method of semiconductor device - Google Patents

Metal film formation method of semiconductor device Download PDF

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Publication number
KR970017982A
KR970017982A KR1019950031113A KR19950031113A KR970017982A KR 970017982 A KR970017982 A KR 970017982A KR 1019950031113 A KR1019950031113 A KR 1019950031113A KR 19950031113 A KR19950031113 A KR 19950031113A KR 970017982 A KR970017982 A KR 970017982A
Authority
KR
South Korea
Prior art keywords
wafer
metal film
semiconductor device
target
center
Prior art date
Application number
KR1019950031113A
Other languages
Korean (ko)
Inventor
최길현
정우상
박지순
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950031113A priority Critical patent/KR970017982A/en
Publication of KR970017982A publication Critical patent/KR970017982A/en

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  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

웨이퍼내에 형성된 다수의 콘택홀 내벽에 형성되는 물질층 두께의 비대칭성을 최소화하는 반도체장치의 금속막 형성방법이 개시된다.Disclosed is a method of forming a metal film of a semiconductor device which minimizes asymmetry of material layer thicknesses formed on inner walls of a plurality of contact holes formed in a wafer.

본 발명은 반응 챔버내의 타겟으로부터 스퍼터된 물질을 이용하여 다수의 콘택홀을 구비한 웨이퍼상에 금속막을 형성하는 방법에 있어서, 상기 타겟과 웨이퍼 사이에 소정의 매개물을 설치하고, 이 매개물을 이용하여 웨이퍼상의 중앙부위 대 모서리 부위(center to edge)와의 금속증착두께의 비대칭성(asymmetry)을 감소시키는 것을 특징으로 한다.The present invention relates to a method of forming a metal film on a wafer having a plurality of contact holes using a material sputtered from a target in a reaction chamber, wherein a predetermined medium is provided between the target and the wafer. It is characterized by reducing the asymmetry of the metal deposition thickness with the center to edge on the wafer (center to edge).

Description

반도체장치의 금속막 형성방법Metal film formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제6도는 본 발명에 의한 LTS 챔버의 단면도.6 is a cross-sectional view of the LTS chamber according to the present invention.

Claims (2)

반응 챔버내의 타겟으로부터 스퍼터된 물질을 이용하여 다수의 콘택홀을 구비한 웨이퍼상에 금속막을 형성하는 방법에 있어서, 상기 타겟과 웨이퍼 사이에 소정의 매개물을 설치하고, 이 매개물을 이용하여 웨이퍼상의 중앙부위 대 모서리 부위(center to edge)와의 금속 증착두께의 비대칭성(asymmetry)을 감소시키는 것을 특징으로 하는 반도체 장치의 금속막 형성방법.A method of forming a metal film on a wafer having a plurality of contact holes using a material sputtered from a target in a reaction chamber, wherein a predetermined medium is provided between the target and the wafer, and the center is formed on the wafer using the medium. A method of forming a metal film in a semiconductor device, characterized by reducing asymmetry of the metal deposition thickness with a center to edge. 제1항에 있어서, 상기 매개물은 벌집 모양의 콜리메이터(collimator) 또는 링(ring) 모양인 것을 특징으로 하는 반도체 장치의 금속막 형성방법.The method of claim 1, wherein the medium is a honeycomb collimator or a ring. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950031113A 1995-09-21 1995-09-21 Metal film formation method of semiconductor device KR970017982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950031113A KR970017982A (en) 1995-09-21 1995-09-21 Metal film formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950031113A KR970017982A (en) 1995-09-21 1995-09-21 Metal film formation method of semiconductor device

Publications (1)

Publication Number Publication Date
KR970017982A true KR970017982A (en) 1997-04-30

Family

ID=66616193

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950031113A KR970017982A (en) 1995-09-21 1995-09-21 Metal film formation method of semiconductor device

Country Status (1)

Country Link
KR (1) KR970017982A (en)

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