KR970013353A - Capacitor Formation Method of Semiconductor Device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a capacitor of a semiconductor device in which a capacitor capacity is sufficiently secured to be suitable for manufacturing a highly integrated DRAM (DRAM) memory device.

The capacitor manufacturing method of the semiconductor device of the present invention for achieving the above object is a first step of forming a gate electrode on the semiconductor substrate on which the field oxide film is formed and the source / drain impurity regions on the substrate on both sides of the gate electrode; A second process of sequentially forming a first insulating film, a second insulating film, and a third insulating film on the entire surface of the substrate on which the gate and the source / drain impurity regions are formed; and selectively wetting the first, second, and third insulating films on the source impurity regions. A third process of removing the source impurity region by dry etching and simultaneously patterning the exposed source impurity region surface into an uneven shape, depositing a first storage node polysilicon on the front surface, and forming a capacitor on the source impurity region A fourth step of forming a fourth insulating film on the first storage node polysilicon in the region; and the fourth section. A fifth step of patterning the storage node of the capacitor by selectively removing the second story node polysilicon on the entire surface of the substrate on which the smoke is formed; and removing the fourth, third, and second insulating layers, and unevenness on the surface of the storage node. And a seventh step of forming a dielectric and a plate electrode on the front surface of the substrate on which the storage node having irregularities on the surface portion is formed.

Description

Capacitor Manufacturing Method for Semiconductor Devices

Since this is an open matter, no full text was included.

Figure 2 is a process cross-sectional view showing a capacitor manufacturing method of a semiconductor device of the present invention.

Claims (3)

Forming a gate electrode on a semiconductor substrate on which a field oxide film is formed and forming source / drain impurity regions on substrates on both sides of the gate electrode; and a first insulating layer and a second insulating layer on an entire surface of the substrate on which the gate and source / drain impurity regions are formed A second process of sequentially forming an insulating film and a third insulating film; and removing the first, second and third insulating films on the source impurity region by selective wet and dry etching to expose the source impurity region and simultaneously expose the source impurity. A third process of patterning the region surface into a concave-convex shape, and a process of depositing a first storage node polysilicon on the front surface and forming a fourth insulating film on the first storage node polysilicon of the source and impurity region upper capacitor formation region. In step 4, a second storage node polysilicon is deposited on the entire surface of the fourth insulating layer, and the fourth insulating layer is deposited. A fifth process of selectively removing the first and second storage node polysilicon so as to remain only at the side and the bottom thereof, and patterning the storage node of the capacitor; and removing the fourth, third, and second insulating layers, and at the same time, the surface of the storage node And a seventh step of forming an unevenness in the substrate, and a seventh step of forming a dielectric and a plate electrode on the front surface of the substrate on which the storage node having the unevenness is formed on the surface portion thereof. 2. The method of claim 1, wherein the first, third, and fourth insulating films are formed of an oxide film and the second insulating film is formed of a nitride film. 3. The method of claim 2, wherein the first process removes the first, second, and third insulating layers by primary dry etching, and then wets the second insulating layer for a predetermined time, and simultaneously patternes the uneven surface of the exposed source impurity region. Capacitor manufacturing method of a semiconductor device characterized in that. ※ Note: The disclosure is based on the initial application.