KR970011995A - Mask Manufacturing Method Using Photoresist - Google Patents

Mask Manufacturing Method Using Photoresist Download PDF

Info

Publication number
KR970011995A
KR970011995A KR1019950028517A KR19950028517A KR970011995A KR 970011995 A KR970011995 A KR 970011995A KR 1019950028517 A KR1019950028517 A KR 1019950028517A KR 19950028517 A KR19950028517 A KR 19950028517A KR 970011995 A KR970011995 A KR 970011995A
Authority
KR
South Korea
Prior art keywords
photoresist
mask
electron beam
manufacturing
fluorescent material
Prior art date
Application number
KR1019950028517A
Other languages
Korean (ko)
Inventor
유상용
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950028517A priority Critical patent/KR970011995A/en
Publication of KR970011995A publication Critical patent/KR970011995A/en

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

포토레시스트를 이용한 마스크의 제조방법에 관하여 개시한다. 본 발명은 전자빔으로 포토레지스크를 노광하기 위하여 상기 포토레지스트위에 형광물질을 도포하는 단계를 포하하는 것을 특징으로 하는 마스크의 제조방법을 제공한다. 본 발명에 따라서 상기 형광 물질을 이용하여 상기 전자빔은 상기 포토레지스크를 노광할 수 있는 빛으로 변환되고, 이 변환된 빛을 이용하여 용이하게 상기 포토레지스트를 노광하여 포토레지스크 패턴을 형성할 수 있다. 따라서, 고해상도 및 높은 재현성을 가지는 마스크 패턴을 쉽게 얻을 수 있으며, 공정도 상당히 용이하여 고집적 반도체 장치에 필요한 마스크를 제작 할 수 있다.A method of manufacturing a mask using photoresist is disclosed. The present invention provides a method of manufacturing a mask, comprising the step of applying a fluorescent material on the photoresist for exposing the photoresist with an electron beam. According to the present invention, the electron beam is converted into light capable of exposing the photoresist using the fluorescent material, and the photoresist can be easily exposed using the converted light to form a photoresist pattern. have. Therefore, a mask pattern having a high resolution and a high reproducibility can be easily obtained, and the process is also very easy to manufacture a mask required for a highly integrated semiconductor device.

Description

포토레지스트를 이용한 마스크 제조 방법Mask Manufacturing Method Using Photoresist

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 2도는 본 발명에 의하여 마스크를 제작하는 방법을 순서대로 보여주는 단면도이다.2 is a cross-sectional view sequentially showing a method of manufacturing a mask according to the present invention.

Claims (2)

포토레지스트를 이요한 마스크의 제조 방법에 있어서, 전자빔으로 포토레지스트를 노광하기 위하여 상기 포토레지스트위에 형광 물질을 도포하는 단계를 포함하는 것을 특징으로 하는 마스크의 제조 방법.A method of manufacturing a mask using a photoresist, the method comprising: applying a fluorescent material over the photoresist to expose the photoresist with an electron beam. 제 1항에 있어서, 상기 형광 물질은 전자빔을 빛으로 변환하는 것을 특징으로 하는 마스크의 제조 방법.The method of claim 1, wherein the fluorescent material converts an electron beam into light. ※ 참고 사항 : 최초출원 내용에 의하여 공개하는 것임※ Note: The disclosure is based on the initial application.
KR1019950028517A 1995-08-31 1995-08-31 Mask Manufacturing Method Using Photoresist KR970011995A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950028517A KR970011995A (en) 1995-08-31 1995-08-31 Mask Manufacturing Method Using Photoresist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950028517A KR970011995A (en) 1995-08-31 1995-08-31 Mask Manufacturing Method Using Photoresist

Publications (1)

Publication Number Publication Date
KR970011995A true KR970011995A (en) 1997-03-29

Family

ID=66597067

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950028517A KR970011995A (en) 1995-08-31 1995-08-31 Mask Manufacturing Method Using Photoresist

Country Status (1)

Country Link
KR (1) KR970011995A (en)

Similar Documents

Publication Publication Date Title
KR970011995A (en) Mask Manufacturing Method Using Photoresist
KR970008372A (en) Fine Pattern Formation Method of Semiconductor Device
KR937000886A (en) Formation method of fine resist pattern
KR910010424A (en) Method of manufacturing optical diffraction grating element
KR970016796A (en) How to make a photo mask
KR970066705A (en) Mask and manufacturing method thereof
KR910001460A (en) How to Improve Sidewall Profile of Photoresist
KR960024679A (en) Exposure focus mask
KR890011047A (en) Etching method of light shielding thin film
KR960025948A (en) Method for producing black matrix for color tubes by etching
KR930010653A (en) High efficiency holographic optical device manufacturing method
KR880011899A (en) Photoresist pattern formation method
KR950025885A (en) Exposure mask formation method
KR960042912A (en) Strain dead point illumination method, openings used therein and a method of manufacturing the same
KR940001289A (en) Phase reversal mask and manufacturing method thereof
KR970016754A (en) Method of manufacturing mask for semiconductor device
KR980003860A (en) Photoresist pattern formation method
KR970016793A (en) Mask manufacturing method using spacer
KR910012806A (en) Photomasking process
KR910007034A (en) Exposure method of cathode ray tube
KR940016501A (en) Method of forming micro contact hole by multi mask
KR960009246A (en) Manufacturing method of light emitting diode
KR970076073A (en) Method for forming photoresist pattern of semiconductor device
KR970022566A (en) Aperture for Projection Exposure System
KR900005849A (en) Transparent electrode of EL display device and manufacturing method thereof

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination