KR960009246A - Manufacturing method of light emitting diode - Google Patents

Manufacturing method of light emitting diode Download PDF

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Publication number
KR960009246A
KR960009246A KR1019940019185A KR19940019185A KR960009246A KR 960009246 A KR960009246 A KR 960009246A KR 1019940019185 A KR1019940019185 A KR 1019940019185A KR 19940019185 A KR19940019185 A KR 19940019185A KR 960009246 A KR960009246 A KR 960009246A
Authority
KR
South Korea
Prior art keywords
light emitting
light
photoreactive film
emitting diode
lens
Prior art date
Application number
KR1019940019185A
Other languages
Korean (ko)
Other versions
KR0135688B1 (en
Inventor
조규석
조현룡
김앙서
신영근
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940019185A priority Critical patent/KR0135688B1/en
Publication of KR960009246A publication Critical patent/KR960009246A/en
Application granted granted Critical
Publication of KR0135688B1 publication Critical patent/KR0135688B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Abstract

본 발명은 발광 다이오드의 제조방법에 관한 것으로서, 상하측 전극이 서로 고립되지 않도록 형성한 발광 다이오드들상에 역상 광반응성 필름을 도포하고, 발광 다이오드에 전류를 통하여 자체의 광으로 상기 광반응성 필름을 노광시킨 후, 현상하여 공세기에 따라 두께가 다른 광반응성 필름 패턴으로된 렌즈를 형성하였으므로, 광의 세기에 따라 두께가 다른 렌즈가 광의 여유분을 흡수하여 소자들의 광강도가 균일하여 별도의 전류 조절을 위한 부분이 생략되어 소자를 고집적화할 수 있으며, 렌즈에 의해 광의 방사각이 작아져 분해능이 향상된다.The present invention relates to a method of manufacturing a light emitting diode, wherein a reverse phase photoreactive film is coated on light emitting diodes formed so that upper and lower electrodes are not isolated from each other, and the photoreactive film is applied to the light emitting diode by its own light. After exposure, it was developed to form a lens having a photoreactive film pattern having a different thickness according to the porosity. Therefore, a lens having a different thickness according to the light intensity absorbs an extra portion of the light so that the light intensity of the elements is uniform, so that a separate current can be controlled. The portion is omitted, so that the device can be highly integrated, and the angle of emission of the light is reduced by the lens, thereby improving the resolution.

Description

발광 다이오드의 제조방법Manufacturing method of light emitting diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1a도 내지 제1c도는 본 발명에 따른 발광 다이오드의 제조 공정도.1a to 1c is a manufacturing process diagram of a light emitting diode according to the present invention.

Claims (2)

상하측 전극의 일단이 서로 연결되어 있는 발광다이오드들을 형성하는 공정과, 상기 발광 다이오드들의 상측 표면에 역상 광반응성 필름을 도포하는 공정과, 상기 발광 다이오드들 자체의 빛으로 상기 광반응성 필름을 노광하는 공정과, 상기 노광되지 않은 광반응성 필름을 제거하여 상기 발광 다이오드들의 발광부 상에 서로 두께가 다른 광반응성 필름 패턴으로된 렌즈를 형성하는 공정을 구비하는 발광 다이오드의 제조방법.Forming light emitting diodes having one ends of upper and lower electrodes connected to each other, applying a reverse phase photoreactive film to an upper surface of the light emitting diodes, and exposing the photoreactive film with light of the light emitting diodes themselves. And removing the unexposed photoreactive film to form a lens having a photoreactive film pattern having a different thickness on the light emitting portions of the light emitting diodes. 제1항에 있어서, 상기 광반응성 필름 도포 및 노광공정을 다수번 실시하여 광의 균일도를 더욱 향상시키는 것을 특징으로 하는 발광 다이오드의 제조방법.The method of manufacturing a light emitting diode according to claim 1, wherein the photoreactive film coating and exposure steps are performed a plurality of times to further improve the uniformity of light. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940019185A 1994-08-03 1994-08-03 The fabrication method of light emitting diode KR0135688B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940019185A KR0135688B1 (en) 1994-08-03 1994-08-03 The fabrication method of light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940019185A KR0135688B1 (en) 1994-08-03 1994-08-03 The fabrication method of light emitting diode

Publications (2)

Publication Number Publication Date
KR960009246A true KR960009246A (en) 1996-03-22
KR0135688B1 KR0135688B1 (en) 1998-04-22

Family

ID=19389755

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940019185A KR0135688B1 (en) 1994-08-03 1994-08-03 The fabrication method of light emitting diode

Country Status (1)

Country Link
KR (1) KR0135688B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100369299B1 (en) * 1995-02-10 2003-04-10 로버트 시. 콜웰 Method and apparatus for pipelining data in an integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100369299B1 (en) * 1995-02-10 2003-04-10 로버트 시. 콜웰 Method and apparatus for pipelining data in an integrated circuit

Also Published As

Publication number Publication date
KR0135688B1 (en) 1998-04-22

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