KR950027966A - Method of manufacturing photoresist pattern of semiconductor device - Google Patents

Method of manufacturing photoresist pattern of semiconductor device Download PDF

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Publication number
KR950027966A
KR950027966A KR1019940004576A KR19940004576A KR950027966A KR 950027966 A KR950027966 A KR 950027966A KR 1019940004576 A KR1019940004576 A KR 1019940004576A KR 19940004576 A KR19940004576 A KR 19940004576A KR 950027966 A KR950027966 A KR 950027966A
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KR
South Korea
Prior art keywords
pattern
sog
forming
photosensitive film
semiconductor device
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Application number
KR1019940004576A
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Korean (ko)
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KR100278908B1 (en
Inventor
김대영
김용학
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019940004576A priority Critical patent/KR100278908B1/en
Publication of KR950027966A publication Critical patent/KR950027966A/en
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Publication of KR100278908B1 publication Critical patent/KR100278908B1/en

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Abstract

본 발명은 반도체 소자의 감광막 패턴 제조방법에 관한 것으로, 반도체 기판상에 감광막을 도포한 후, 상기 감광막의 패턴으로 예정된 부분을 소정두께 제거하여 요홈을 형성하고, 상기 요홈을 SOG패턴으로 메운 후, 상기 SOG패턴을 마스크로 감광막을 건식식각하여 감광막패턴을 형성하였으므로, 노광에너지가 감소되어 노광 공정여유도가 증가되고, 반사광에 의한 나칭을 방지하여 공정 수율 및 소자의 신뢰성을 향상시킬 수 있다.The present invention relates to a method for manufacturing a photosensitive film pattern of a semiconductor device, after applying a photosensitive film on a semiconductor substrate, and removing a predetermined thickness as a pattern of the photosensitive film to form a groove, and filling the groove with an SOG pattern, Since the photoresist pattern is formed by dry etching the photoresist layer using the SOG pattern as a mask, the exposure energy is reduced, the exposure process margin is increased, and the nagging by the reflected light is prevented, thereby improving process yield and device reliability.

Description

반도체 소자의 감광막 패턴 제조방법Method of manufacturing photoresist pattern of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도 (A)-(D)는 본 발명에 따른 감광막패턴 제조 공정도.2 (A)-(D) is a process chart of the photosensitive film pattern according to the present invention.

Claims (2)

반도체 기판상에 감광막을 형성하는 공정과, 상기 감광막의 패턴으로 예정된 부분을 소정두께 제거하여 요홈을 형성하는 공정과, 상기 요홈을 메우는 SOG패턴을 형성하는 공정과, 상기 SOG패턴을 마스크로하여 노출되어 있는 감광막을 이방성식각하여 상기 SOG패턴 하부의 감광막패턴을 형성하는 공정을 구비하는 반도체소자의 감광막패턴 제조방법.Forming a photoresist film on a semiconductor substrate, forming a recess by removing a predetermined thickness as a pattern of the photoresist film, forming a SOG pattern to fill the recess, and exposing the SOG pattern as a mask And anisotropically etching the photosensitive film, thereby forming a photosensitive film pattern under the SOG pattern. 제1항에 있어서, 상기 SOG패턴 형성공정이 상기 요홈이 형성되어 있는 감광막상에 SOG층을 형성한 후, 전면 이방성식각하여 형성하는 것을 특징으로하는 반도체소자의 감광막패턴 제조방법.The method of claim 1, wherein the SOG pattern forming step is performed by forming an SOG layer on the photoresist film on which the groove is formed, and then anisotropically etching the entire surface. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940004576A 1994-03-09 1994-03-09 Method of manufacturing photoresist pattern of semiconductor device KR100278908B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940004576A KR100278908B1 (en) 1994-03-09 1994-03-09 Method of manufacturing photoresist pattern of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940004576A KR100278908B1 (en) 1994-03-09 1994-03-09 Method of manufacturing photoresist pattern of semiconductor device

Publications (2)

Publication Number Publication Date
KR950027966A true KR950027966A (en) 1995-10-18
KR100278908B1 KR100278908B1 (en) 2001-01-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940004576A KR100278908B1 (en) 1994-03-09 1994-03-09 Method of manufacturing photoresist pattern of semiconductor device

Country Status (1)

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KR (1) KR100278908B1 (en)

Also Published As

Publication number Publication date
KR100278908B1 (en) 2001-01-15

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