KR970004058A - Manufacturing method of highly integrated bipolar transistor - Google Patents
Manufacturing method of highly integrated bipolar transistor Download PDFInfo
- Publication number
- KR970004058A KR970004058A KR1019950017238A KR19950017238A KR970004058A KR 970004058 A KR970004058 A KR 970004058A KR 1019950017238 A KR1019950017238 A KR 1019950017238A KR 19950017238 A KR19950017238 A KR 19950017238A KR 970004058 A KR970004058 A KR 970004058A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide
- emitter
- collector
- mask
- bipolar transistor
- Prior art date
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- Bipolar Transistors (AREA)
Abstract
본 발명은 고집적화를 이룰 수 있는 바이폴라 트랜지스터 제조방법에 관한 것이다.The present invention relates to a bipolar transistor manufacturing method capable of high integration.
이와 같은 본 발명의 고집적 바이폴라 트랜지스터의 제조방법은 반도체 기판위에 n형의 이온주입을 실시하여 n+형의 콜렉터를 형성하는 공정과, 콜렉터가 형성된 기판위에 산화물을 증착하고 마스크 및 식각을 통하여 상기 n+의 콜렉터의 소정부분의 상부가 노출되도록 두 부분의 산화물을 식각하는 공정과, 산화물의 구멍이 형성된 부분에 선택적인 에피택셜 성장시키는 공정과, 성장된 에피택셜 실리콘 표면을 평탄화 하여 p-형 불순물을 이온주입하는 공정과, 이온주입된 에피택셜층중 스텝이 형성된 부분의 위에 폴리실리콘을 성막하여 이미터 패턴을 형성하고, 이미터 폴리실리콘의 측단부에 스페이서 산화물을 형성한 다음 그 형성된 이미터부분을 마스크로 하여 P+이온을 주입하는 공정을 포함하는 것을 특징으로 한다.Such a method for manufacturing a highly integrated bipolar transistor of the present invention comprises the steps of forming an n + type collector by implanting an ion of n type on a semiconductor substrate, depositing an oxide on the substrate on which the collector is formed, and forming the n through mask and etching. Etching two portions of the oxide so that the upper portion of the collector of + is exposed, selectively epitaxially growing the oxide hole and planarizing the grown epitaxial silicon surface to form a p-type impurity Ion-implanted, polysilicon is formed on the stepped portion of the ion-implanted epitaxial layer to form an emitter pattern, a spacer oxide is formed on the side end of the emitter polysilicon, and then the formed emitter And implanting P + ions using the portion as a mask.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
첨부한 도면은 본 발명 바이폴라 트랜지스터의 제조과정을 설명하기 위한 공정 흐름도.The accompanying drawings are a process flow diagram for explaining the manufacturing process of the bipolar transistor of the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950017238A KR970004058A (en) | 1995-06-24 | 1995-06-24 | Manufacturing method of highly integrated bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950017238A KR970004058A (en) | 1995-06-24 | 1995-06-24 | Manufacturing method of highly integrated bipolar transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970004058A true KR970004058A (en) | 1997-01-29 |
Family
ID=66524645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950017238A KR970004058A (en) | 1995-06-24 | 1995-06-24 | Manufacturing method of highly integrated bipolar transistor |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970004058A (en) |
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1995
- 1995-06-24 KR KR1019950017238A patent/KR970004058A/en not_active Application Discontinuation
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