KR970003669A - Metal wiring formation method to prevent metal film corrosion - Google Patents

Metal wiring formation method to prevent metal film corrosion Download PDF

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Publication number
KR970003669A
KR970003669A KR1019950019080A KR19950019080A KR970003669A KR 970003669 A KR970003669 A KR 970003669A KR 1019950019080 A KR1019950019080 A KR 1019950019080A KR 19950019080 A KR19950019080 A KR 19950019080A KR 970003669 A KR970003669 A KR 970003669A
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KR
South Korea
Prior art keywords
metal
film
formation method
wiring formation
organic material
Prior art date
Application number
KR1019950019080A
Other languages
Korean (ko)
Inventor
윤용혁
이병석
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950019080A priority Critical patent/KR970003669A/en
Publication of KR970003669A publication Critical patent/KR970003669A/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 강력한 산화특성을 갖는 오존(ozone)을 사용해서 감광막 제거공정시 감광막 제거와 더불어 금속 표면에 금속산화막을 형성시켜 주므로서, 금속식각 공정후 공정상의 지연으로 웨이퍼가 공기중에 장시간 노출되어 공기중의 수분에 의해 메탈이 부식되는 것을 방지하는 금속배선 형성 방법에 관한 것으로, 공정 및 소자의 신뢰성을 증가시키는 효과가 있다.The present invention uses ozone having strong oxidation characteristics to form a metal oxide film on the metal surface in addition to removing the photoresist during the photoresist removal process, the wafer is exposed to the air for a long time due to the delay in the process after the metal etching process The present invention relates to a metal wiring forming method for preventing metal from being corroded by moisture in water, and has an effect of increasing reliability of a process and a device.

Description

금속막 부식 방지를 위한 금속배선 형성 방법Metal wiring formation method to prevent metal film corrosion

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1D도는 본 발명의 일실시예에 따른 금속배선 형성 공정도.1D is a process diagram of forming a metal wire according to an embodiment of the present invention.

Claims (2)

금속배선 형성 방법에 있어서; 금속막상에 금속배선 마스크인 유기물질막 패턴을 형성하는 단계; 상기 금속막을 식각하여 금속막 패턴을 형성하는 단계; 오존을 사용하여 상기 유기물질막 패턴을 제거하고 상기 금속막 표면에 금속산화막을 형성하는 단계; 상기 금속산화막이 형성된 웨이퍼를 습식세정 처리하는 계를 포함하는 것을 특징으로 하는 금속막 부식 방지를 위한 금속 배선 형성 방법.In the metal wiring formation method; Forming an organic material film pattern, which is a metal wiring mask, on the metal film; Etching the metal film to form a metal film pattern; Removing the organic material film pattern using ozone and forming a metal oxide film on the metal film surface; And a system for wet-cleaning the wafer on which the metal oxide film is formed. 제1항에 있어서; 상기 오존을 사용하여 상기 유기물질막 패턴을 제거하고 상기 금속막 표면에 금속산화막을 형성하는 단계를 오존과의 상기 유기물질과의 화학반응으로 유기물질막 패턴을 제거하는 단계; 인-시츄로 오존처리하여 상기 금속산화막을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 금속막 부식 방지를 위한 금속 배선 형성 방법.The method of claim 1; Removing the organic material film pattern by removing the organic material film pattern using the ozone and forming a metal oxide film on the surface of the metal film by chemical reaction of the organic material with ozone; Ozone treatment in-situ to form the metal oxide film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950019080A 1995-06-30 1995-06-30 Metal wiring formation method to prevent metal film corrosion KR970003669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950019080A KR970003669A (en) 1995-06-30 1995-06-30 Metal wiring formation method to prevent metal film corrosion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950019080A KR970003669A (en) 1995-06-30 1995-06-30 Metal wiring formation method to prevent metal film corrosion

Publications (1)

Publication Number Publication Date
KR970003669A true KR970003669A (en) 1997-01-28

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ID=66526203

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950019080A KR970003669A (en) 1995-06-30 1995-06-30 Metal wiring formation method to prevent metal film corrosion

Country Status (1)

Country Link
KR (1) KR970003669A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030000964A (en) * 2001-06-27 2003-01-06 주식회사 하이닉스반도체 Method for forming metal line of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030000964A (en) * 2001-06-27 2003-01-06 주식회사 하이닉스반도체 Method for forming metal line of semiconductor device

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