KR970053114A - How to prevent corrosion of metal wiring in semiconductor devices - Google Patents

How to prevent corrosion of metal wiring in semiconductor devices Download PDF

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Publication number
KR970053114A
KR970053114A KR1019950050980A KR19950050980A KR970053114A KR 970053114 A KR970053114 A KR 970053114A KR 1019950050980 A KR1019950050980 A KR 1019950050980A KR 19950050980 A KR19950050980 A KR 19950050980A KR 970053114 A KR970053114 A KR 970053114A
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KR
South Korea
Prior art keywords
pure water
wafer
cleaning
ammonia gas
weakly alkaline
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KR1019950050980A
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Korean (ko)
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KR0171735B1 (en
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윤용혁
김상욱
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김주용
현대전자산업 주식회사
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Priority to KR1019950050980A priority Critical patent/KR0171735B1/en
Publication of KR970053114A publication Critical patent/KR970053114A/en
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Publication of KR0171735B1 publication Critical patent/KR0171735B1/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 금속식각 공정 후 순수를 사용하여 세정하는 공정에서 순수에 소량의 암모니아 가스를 용해시켜 순수를 약알카리성으로 변하게 하여 이 용액이 기판 위에 잔존하는 염소이온과 중화반응을 일으키면서 세정을 염소이온을 완벽하게 제거하고, 또한 순수에 암모니아 가스를 용해시켜 주므로서 순수의 비저항값을 저하시켜 국부전지 효과에 의해 금속배선층이 떨어져 나가는 것을 방지할 수 있는 반도체 소자의 금속배선 부식 방지 방법을 제공하는데 그 목적이 있다.The present invention dissolves a small amount of ammonia gas in the pure water in the process of cleaning using pure water after the metal etching process to change the pure water into weak alkali, causing the solution to neutralize the chlorine ions remaining on the substrate while washing the chlorine ion To remove metals completely and to dissolve ammonia gas in pure water, thereby lowering the resistivity of pure water, thereby preventing metal wiring layers from falling off due to local battery effects. There is a purpose.

Description

반도체 소자의 금속배선 부식 방지 방법How to prevent corrosion of metal wiring in semiconductor devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (8)

반도체 소자의 금속배선 부식 방지 방법에 있어서, 감광막 패턴을 이용하여 반도체 소자의 금속배선을 형성하는 단계; 상기 감광막 패턴을 제거하는 단계; 및 잔류되어 있는 식각가스를 제거하기 위하여 순수에 암모니아 가스를 용해시킨 약알카리성 용액을 이용하여 웨이퍼를 세정하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 금속배선 부식 방지 방법.Claims [1] A method of preventing corrosion of metal wires in a semiconductor device, the method comprising: forming metal wires of a semiconductor device using a photosensitive film pattern; Removing the photoresist pattern; And cleaning the wafer using a weakly alkaline solution in which ammonia gas is dissolved in pure water to remove residual etching gas. 제1항에 있어서, 상기 약알카리성 용액을 이용하여 웨이퍼를 세정한 후 암모니아 가스 포함하지 않은 순수로 세정하는 단계를 더 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 금속배선 부식 방지 방법.The method of claim 1, further comprising: cleaning the wafer using the weakly alkaline solution and then cleaning the wafer with pure water that does not contain ammonia gas. 제1항에 있어서, 상기 금속배선을 형성하는 단계, 상기 감광막 패턴을 제거하는 단계, 및 웨이퍼 세정 단계는 동일한 건식식각 장비에서 이루어지는 것을 특징으로 하는 반도체 소자의 금속배선 부식 방지 방법.The method of claim 1, wherein the forming of the metal line, removing the photoresist pattern, and cleaning the wafer are performed in the same dry etching equipment. 제1항에 있어서, 상기 웨이퍼 세정 단계는 습식식각 장비의 세정조에서 이루어지는 것을 특징으로 하는 반도체 소자의 금속배선 부식 방지 방법.The method of claim 1, wherein the wafer cleaning step is performed in a cleaning tank of a wet etching apparatus. 제3항에 있어서, 상기 웨이퍼 세정 단계는 순수 공급라인에 암모니아 가스 공급라인을 병렬로 연결시켜 순수에 암모니아 가스를 첨가하는 것을 특징으로 하는 반도체 소자의 금속배선 부식 방지 방법.4. The method of claim 3, wherein the wafer cleaning step comprises adding ammonia gas to the pure water by connecting the ammonia gas supply line to the pure water supply line in parallel. 5. 제1항에 있어서, 암모니아 가스의 첨가량은 순수의 비저항값을 1KΩ-CM 이하로 조절할 수 있는 양인 것을 특징으로 하는 반도체 소자의 금속배선 부식 방지 방법.The method of claim 1, wherein the amount of added ammonia gas is an amount capable of adjusting the resistivity of pure water to 1 KΩ-CM or less. 제3항에 있어서, 상기 약알카리성 순수 용액을 이용한 웨이퍼 세정시간은 40∼60sec인 것을 특징으로 하는 반도체 소자의 금속배선 부식 방지 방법.4. The method of claim 3, wherein the wafer cleaning time using the weakly alkaline pure solution is 40 to 60 sec. 제4항에 있어서, 상기 약알카리성 순수 용액을 이용한 웨이퍼 세정시간은 3∼15분인 것을 특징으로 하는 반도체 소자의 금속배선 부식 방지 방법.The method of claim 4, wherein the wafer cleaning time using the weakly alkaline pure solution is 3 to 15 minutes. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950050980A 1995-12-16 1995-12-16 Method of preventing metal wire of semiconductor device from etching KR0171735B1 (en)

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KR1019950050980A KR0171735B1 (en) 1995-12-16 1995-12-16 Method of preventing metal wire of semiconductor device from etching

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Application Number Priority Date Filing Date Title
KR1019950050980A KR0171735B1 (en) 1995-12-16 1995-12-16 Method of preventing metal wire of semiconductor device from etching

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KR970053114A true KR970053114A (en) 1997-07-29
KR0171735B1 KR0171735B1 (en) 1999-03-30

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100461743B1 (en) * 2001-05-14 2004-12-14 샤프 가부시키가이샤 Method For Plasma Etching Of Ir-Ta-O Electrode And For Post-Etch Cleaning

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100461743B1 (en) * 2001-05-14 2004-12-14 샤프 가부시키가이샤 Method For Plasma Etching Of Ir-Ta-O Electrode And For Post-Etch Cleaning

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