JP2735631B2 - Cleaning method and apparatus - Google Patents

Cleaning method and apparatus

Info

Publication number
JP2735631B2
JP2735631B2 JP1175580A JP17558089A JP2735631B2 JP 2735631 B2 JP2735631 B2 JP 2735631B2 JP 1175580 A JP1175580 A JP 1175580A JP 17558089 A JP17558089 A JP 17558089A JP 2735631 B2 JP2735631 B2 JP 2735631B2
Authority
JP
Japan
Prior art keywords
water
organic solvent
cleaning
cleaned
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1175580A
Other languages
Japanese (ja)
Other versions
JPH0342084A (en
Inventor
富春 安井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuyama Corp
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Priority to JP1175580A priority Critical patent/JP2735631B2/en
Publication of JPH0342084A publication Critical patent/JPH0342084A/en
Application granted granted Critical
Publication of JP2735631B2 publication Critical patent/JP2735631B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、プリント基板等の洗浄に適した洗浄方法及
びそれに用いる洗浄装置に関する。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning method suitable for cleaning printed circuit boards and the like, and a cleaning apparatus used therefor.

〔従来技術〕(Prior art)

種々の電子機器に用いられているプリント基板は、そ
の製造工程中にハンダ付け工程を有している。ハンダ付
け工程では、ハンダの接着性を良好にするために通常ロ
ジン等のフラックスが用いられている。フラツクスは回
路腐蝕やICの誤動作の原因となるためハンダ付け工程の
後に洗浄によって除去される。その方法としては、従来
は、まず、純水中にプリント基板を浸漬してプリント基
板に付着したフラツクスを除去し、次いでプリント基板
の水切り及び乾燥のためにイソプロピルアルコール等の
水相溶性有機溶媒中にプリント基板を浸漬するという方
法が採用されていた。
2. Description of the Related Art A printed circuit board used for various electronic devices has a soldering step in a manufacturing process. In the soldering step, a flux such as rosin is usually used to improve the solder adhesion. The flux is removed by washing after the soldering process because it causes circuit corrosion and malfunction of the IC. Conventionally, as a method, first, a printed circuit board is immersed in pure water to remove the flux adhered to the printed circuit board, and then, in a water-compatible organic solvent such as isopropyl alcohol for draining and drying the printed circuit board. A method of immersing a printed circuit board in a substrate has been adopted.

〔発明が解決しようとする課題〕[Problems to be solved by the invention]

しかしながら、上記の方法によるとプリント基板の細
部まで十分に洗浄することができないため、フラツクス
を完全に除去することができないという問題があつた。
However, according to the above-described method, there is a problem that the flux cannot be completely removed because the details of the printed circuit board cannot be sufficiently cleaned.

〔課題を解決するための手段〕[Means for solving the problem]

本発明者らは、上記した問題に鑑み、プリント基板の
細部まで十分に洗浄が可能で、細部に付着したフラツク
スを除去し得る方法について検討した結果、上記の目的
を達成し得る洗浄方法を見出し、本発明を完成させるに
至った。
In view of the above problems, the present inventors have studied a method capable of sufficiently cleaning the details of a printed circuit board and removing a flux attached to the details, and as a result, have found a cleaning method that can achieve the above object. Thus, the present invention has been completed.

即ち、本発明は、被洗浄物を水中に浸漬する第1工
程、水中から引き上げられた被洗浄物を水100重量部と
任意の割合において水と完全に相溶する水相溶性有機溶
媒40〜200重量部との混合溶媒中に浸漬する第2工程、
及び混合溶媒中から引き上げられた被洗浄物を任意の割
合において水と完全に相溶する水相溶性有機溶媒中に浸
漬する第3工程よりなることを特徴とする洗浄方法であ
る。
That is, the present invention provides a first step of immersing an object to be cleaned in water, a water-compatible organic solvent 40 to 100% by weight of water and an arbitrary ratio of water that is completely compatible with water at an arbitrary ratio. A second step of dipping in a mixed solvent with 200 parts by weight,
And a third step of immersing the object to be cleaned pulled up from the mixed solvent in a water-compatible organic solvent which is completely compatible with water at an arbitrary ratio.

本発明の洗浄方法における第1工程は、被洗浄物を水
中に浸漬する工程である。被洗浄物がプリント基板のよ
うに各種イオンの付着をきらうような場合には、水とし
て純水や超純水が用いられる。水中への被洗浄物の浸漬
時間は常に制限されるものではないが、プリント基板の
フラツクス除去のためには、一般に60秒以上であること
が好ましい。
The first step in the cleaning method of the present invention is a step of immersing the object to be cleaned in water. When the object to be cleaned does not adhere various ions like a printed circuit board, pure water or ultrapure water is used as water. The immersion time of the object to be cleaned in water is not always limited, but is generally preferably 60 seconds or more for removing the flux of the printed circuit board.

次に、本発明の洗浄方法における第2工程は、第1工
程で引き上げられた被洗浄物を水100重量部と任意の割
合において水と完全に相溶する水相溶性有機溶媒(以
下、単に水相溶性有機溶媒という)40〜200重量部との
混合溶媒中に浸漬する工程である。ここで使用される水
は、第1工程で説明した純水や超純水が好適である。
Next, in the second step of the cleaning method of the present invention, a water-compatible organic solvent (hereinafter simply referred to as “water-compatible organic solvent”) that completely dissolves the object to be cleaned pulled up in the first step in 100 parts by weight of water and water at an arbitrary ratio. This is a step of immersing in a mixed solvent of 40 to 200 parts by weight (referred to as a water-compatible organic solvent). The water used here is preferably the pure water or the ultrapure water described in the first step.

また、水相溶性有機溶媒は、任意の割合において水と
完全に相溶するものであれば、公知のものが何ら制限さ
れずに採用し得る。例えば、メタノール、エタノール、
イソプロパノール等のアルコール類;アセトン、メチル
エチルケトン等のケトン類を挙げることができる。
In addition, as the water-compatible organic solvent, any known solvent may be used without any limitation as long as it is completely compatible with water at an arbitrary ratio. For example, methanol, ethanol,
Alcohols such as isopropanol; ketones such as acetone and methyl ethyl ketone;

水と水相溶性有機溶媒との混合比は、前者が100重量
部に対して後者が40〜200重量部の範囲でなければなら
ず、後者が50〜150重量部の範囲であることが好まし
い。水相溶性有機溶媒の混合量が上記の範囲よりも少な
い場合には混合溶媒の洗浄力が不十分であり、一方、上
記の範囲よりも多い場合には混合溶媒の洗浄力は十分で
あるが被洗浄物の細部までの洗浄が十分に行なえない。
The mixing ratio of water and the water-miscible organic solvent, the former must be in the range of 40 to 200 parts by weight with respect to 100 parts by weight, and the latter is preferably in the range of 50 to 150 parts by weight. . When the mixing amount of the water-miscible organic solvent is less than the above range, the detergency of the mixed solvent is insufficient, while when it is more than the above range, the detergency of the mixed solvent is sufficient. Cleaning of the details of the object to be cleaned cannot be performed sufficiently.

第2工程における混合溶媒中への被洗浄物の浸漬時間
は、被洗浄物の細部へ混合溶媒が十分に行きわたるよう
にするために、第1工程での浸漬時間よりも多少長く、
120秒以上であることが好ましい。
The immersion time of the object to be cleaned in the mixed solvent in the second step is slightly longer than the immersion time in the first step in order to sufficiently spread the mixed solvent to the details of the object to be cleaned.
It is preferably 120 seconds or more.

次に、本発明の洗浄方法における第3工程は、第2工
程で引き上げられた被洗浄物を水相溶性有機溶媒中に浸
漬する工程である。この工程で用いられる水相溶性有機
溶媒としては、第2工程で説明したものと同じものが採
用し得る。この第3工程は、第2工程から引き上げられ
た被洗浄物の水切りの役目を果たす。
Next, the third step in the cleaning method of the present invention is a step of immersing the object to be cleaned raised in the second step in a water-compatible organic solvent. As the water-compatible organic solvent used in this step, the same one as described in the second step can be employed. This third step plays a role of draining the object to be cleaned lifted from the second step.

被洗浄物の水切りを十分に行ない、乾燥後のしみの発
生を防止するためには、第3工程は次のようであること
が好ましい。水相溶性有機溶媒の沸点より10〜50℃低い
温度に保持された水相溶性有機溶媒中に被洗浄物を浸漬
した後、50cm/mm以下の速度で被洗浄物を引き上げる方
法である。
The third step is preferably as follows in order to sufficiently drain the object to be washed and to prevent generation of stains after drying. This is a method in which an object to be cleaned is immersed in a water-compatible organic solvent maintained at a temperature lower by 10 to 50 ° C. than the boiling point of the water-compatible organic solvent, and then the object to be cleaned is pulled up at a speed of 50 cm / mm or less.

ここで使用される水相溶性有機溶媒は、沸点より10〜
50℃低い温度に保持され、その中に被洗浄物が浸漬され
る。従って、被洗浄物が熱をきらう場合には、沸点があ
まり高くない水相溶性有機溶媒を採用することが好まし
い。通常は、沸点が50〜90℃の範囲である水相溶性有機
溶媒が好適に採用される。
The water-compatible organic solvent used here has a boiling point of 10 to
The temperature is kept lower by 50 ° C., and the object to be cleaned is immersed therein. Therefore, when the object to be cleaned loses heat, it is preferable to employ a water-compatible organic solvent having a boiling point not so high. Usually, a water-compatible organic solvent having a boiling point in the range of 50 to 90 ° C. is suitably used.

上記の温度範囲に保持された水相溶性有機溶媒中に、
被洗浄物が浸漬される。浸漬の時間は特に制限されない
が、被洗浄物の水切りを十分に行なうためには通常120
秒以上浸漬することが好ましい。
In a water-compatible organic solvent maintained in the above temperature range,
An object to be cleaned is immersed. Although the time of immersion is not particularly limited, it is usually 120 to sufficiently drain the object to be cleaned.
It is preferable to soak for at least two seconds.

その後、水相溶性有機溶媒中から被洗浄物が引き上げ
られる。被洗浄物の引き上げ速度は、有機溶媒の温度が
低いときには遅くすることが好ましく、有機溶媒の温度
が高いときには速くすることができる。引き上げ速度が
あまりに遅い場合には、単位時間当りの処理能力が低く
なるために、十分な乾燥と処理能力とを考慮すると、一
般には5〜30cm/mmの範囲となるように有機溶媒の温度
条件との関係で引き上げ速度を決定することが好まし
い。
Thereafter, the object to be cleaned is pulled up from the water-compatible organic solvent. The lifting speed of the object to be cleaned is preferably reduced when the temperature of the organic solvent is low, and can be increased when the temperature of the organic solvent is high. If the pulling speed is too slow, the processing capacity per unit time will be low, so in consideration of sufficient drying and processing capacity, the temperature condition of the organic solvent is generally in the range of 5 to 30 cm / mm. It is preferable to determine the pulling speed in relation to the following.

尚、本発明における上記の被洗浄物は、鉛直方向に引
き上げるのが通常である。しかし、鉛直方向にある角度
をなす方向に引き上げてもよく、その場合の引き上げ速
度は、鉛直方向の速度成分で表わされる。
Note that the object to be cleaned in the present invention is usually pulled up in the vertical direction. However, the lifting may be performed in a direction forming an angle in the vertical direction, and the lifting speed in that case is represented by a vertical speed component.

上記の洗浄方法においては、次に述べる装置が好適に
採用される。即ち、水を入れる第1洗浄槽1、水100重
量部と水相溶性有機溶媒40〜200重量部との混合溶媒を
入れる第2洗浄槽2、及び水相溶性有機溶媒を入れる第
3洗浄槽3よりなり、第3洗浄槽3の水相溶性有機溶媒
を第2洗浄槽2に供給する供給管4によって第3洗浄槽
3と第2洗浄槽2とが連結され、第2洗浄槽2の混合溶
媒を排出するための排出管5が第2洗浄槽に設けられて
なる洗浄装置である。
In the above-mentioned cleaning method, the following apparatus is suitably employed. A first washing tank 1 for containing water, a second washing tank 2 for containing a mixed solvent of 100 parts by weight of water and 40 to 200 parts by weight of a water-compatible organic solvent, and a third washing tank for containing a water-compatible organic solvent. The third washing tank 3 and the second washing tank 2 are connected by a supply pipe 4 for supplying the water-compatible organic solvent in the third washing tank 3 to the second washing tank 2. This is a cleaning device in which a discharge pipe 5 for discharging the mixed solvent is provided in the second cleaning tank.

第2洗浄槽において被洗浄物の洗浄により次第に汚れ
てきた混合溶媒は、排出管5を経て系外に排出される。
そして、第3洗浄槽の水相溶性有機溶媒は、第2洗浄槽
で不足した混合溶媒の調製のために第2洗浄槽へ供給管
4を経て供給され、別途、第2洗浄槽へ供給管6から供
給される水と混合されて混合溶媒を形成する。さらに、
第3洗浄槽には第2洗浄槽に補給した水相溶性有機溶媒
の不足分を補うために、新しい水相溶性有機溶媒が供給
管7から供給される。
The mixed solvent gradually contaminated by the cleaning of the object to be cleaned in the second cleaning tank is discharged out of the system through the discharge pipe 5.
Then, the water-miscible organic solvent in the third cleaning tank is supplied to the second cleaning tank via the supply pipe 4 for preparing the mixed solvent which is insufficient in the second cleaning tank, and is separately supplied to the second cleaning tank. 6 to form a mixed solvent. further,
A new water-compatible organic solvent is supplied from the supply pipe 7 to the third cleaning tank in order to compensate for the shortage of the water-compatible organic solvent supplied to the second cleaning tank.

このような装置を用いることによって、水相溶性有機
溶媒を第3洗浄槽と第2洗浄槽の両方において使用する
ことができるために、水相溶性有機溶媒を有効に利用す
ることができる。
By using such an apparatus, since the water-compatible organic solvent can be used in both the third washing tank and the second washing tank, the water-compatible organic solvent can be effectively used.

さらに、本発明においては、第3洗浄槽の次に、窒素
ガスを吹き付けによる被洗浄物の乾燥燥工程を必要に応
じて付け加えることができる。
Further, in the present invention, after the third cleaning tank, a step of drying and drying the object to be cleaned by spraying nitrogen gas can be added as necessary.

〔効 果〕(Effect)

本発明の洗浄方法によれば、第1洗浄槽によって被洗
浄物の大部分を洗浄することができ、第2洗浄槽によっ
て被洗浄物の細部の洗浄を行なうことができ、これら2
つの洗浄槽によって、被洗浄物の洗浄が十分に行なわれ
る。そして、さらに第3洗浄槽によて、水切りを十分に
行なうことができる。特に、第3洗浄槽において、水相
溶性有機溶媒の温度及び被洗浄物の引き上げ温度として
前記したような特定の値を採用した場合には、第3洗浄
槽で水切り及び乾燥を同時に行なうことができるため、
別途、乾燥のために蒸気洗浄を行なう必要がない。
According to the cleaning method of the present invention, most of the object to be cleaned can be cleaned by the first cleaning tank, and details of the object to be cleaned can be cleaned by the second cleaning tank.
The cleaning object is sufficiently cleaned by the two cleaning tanks. Further, draining can be sufficiently performed by the third cleaning tank. In particular, when the above-described specific values are used as the temperature of the water-compatible organic solvent and the temperature at which the object to be cleaned is raised in the third cleaning tank, draining and drying can be performed simultaneously in the third cleaning tank. Because you can
There is no need to separately perform steam cleaning for drying.

本発明は、前記したプリント基板の洗浄のほか、シリ
コンウエハー、セラミツク基板、ガラス基板等の洗浄に
も適用することができる。
The present invention can be applied to cleaning of a silicon wafer, a ceramic substrate, a glass substrate, and the like, in addition to the above-described cleaning of the printed circuit board.

〔実施例〕〔Example〕

本発明をさらに詳細に説明するために実施例及び比較
例を掲げるが、本発明はこれらの実施例に限定されるも
のではない。
Examples and Comparative Examples will be given in order to explain the present invention in further detail, but the present invention is not limited to these Examples.

実施例 第1図に示した洗浄装置の第1洗浄槽、第2洗浄槽及
び第3洗浄槽に、それぞれ超純水、表1に示した組成の
イソプロピルアルコールと超純水との混合溶媒、及びイ
ソプロピルアルコールを入れ、フラツクスが付着したプ
リント基板を各槽に順次、3分間ずつ浸漬させて洗浄及
び乾燥を行なった。洗浄及び乾燥前後のフラツクス量を
求め、その除去率を表1に示した。また、洗浄及び乾燥
後のプリント基板の表面のしみの有無を光学顕微鏡で観
察し、その結果を表1に示した。
Example 1 Ultra-pure water, a mixed solvent of isopropyl alcohol and ultra-pure water having the composition shown in Table 1, respectively, in the first cleaning tank, the second cleaning tank, and the third cleaning tank of the cleaning apparatus shown in FIG. And isopropyl alcohol, and the printed circuit board on which the flux was adhered was sequentially immersed in each tank for 3 minutes to perform washing and drying. The flux amounts before and after washing and drying were determined, and the removal rates are shown in Table 1. In addition, the surface of the printed circuit board after washing and drying was observed with an optical microscope for the presence or absence of stains, and the results are shown in Table 1.

なお、各槽とも液温は60℃とし、第3洗浄槽からのプ
リント基板の引き上げを表1に示した速度で行なった。
The liquid temperature of each tank was 60 ° C., and the printed circuit board was pulled up from the third washing tank at the speed shown in Table 1.

【図面の簡単な説明】[Brief description of the drawings]

第1図は、本発明で用いられる洗浄装置の概略図であ
る。
FIG. 1 is a schematic view of a cleaning apparatus used in the present invention.

フロントページの続き (51)Int.Cl.6 識別記号 FI C11D 7/50 C11D 7/50 C23G 5/04 C23G 5/04 H05K 3/26 H05K 3/26 (56)参考文献 特開 昭49−13034(JP,A) 特開 昭62−183804(JP,A) 特開 昭52−126071(JP,A) 特開 昭57−198278(JP,A) 特開 平1−111338(JP,A) 実開 昭55−115338(JP,U) 実開 昭47−11970(JP,U) 特公 昭45−3014(JP,B1) 特公 昭50−18484(JP,B1) 特公 昭48−14145(JP,B1) 特公 昭35−1373(JP,B1) 特公 昭45−29595(JP,B1) 特公 昭52−30635(JP,B2) 特公 昭64−9620(JP,B2) 特公 昭58−20677(JP,B2) 特公 昭52−30634(JP,B2) 特公 昭60−26063(JP,B2) 特公 昭57−54079(JP,B2) 実公 昭42−6781(JP,Y1)Continuation of the front page (51) Int.Cl. 6 Identification code FI C11D 7/50 C11D 7/50 C23G 5/04 C23G 5/04 H05K 3/26 H05K 3/26 (56) References JP-A-49-13034 (JP, A) JP-A-62-183804 (JP, A) JP-A-51-226071 (JP, A) JP-A-57-198278 (JP, A) JP-A-1-111338 (JP, A) Sho-55-115338 (JP, U) JP-B 47-11970 (JP, U) JP-B 45-3014 (JP, B1) JP-B 50-18484 (JP, B1) JP-B 48-14145 (JP-B) JP, B1) JP-B 35-1373 (JP, B1) JP-B 45-29595 (JP, B1) JP-B 52-30635 (JP, B2) JP-B 64-9620 (JP, B2) 58-20677 (JP, B2) JP-B 52-30634 (JP, B2) JP-B 60-26063 (JP, B2) JP-B 57-54079 (JP, B2) Jiko 42-6781 (JP , Y1)

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】被洗浄物を水中に浸漬する第1工程、水中
から引き上げられた被洗浄物を水100重量部と任意の割
合において水と完全に相溶する水相溶性有機溶媒40〜20
0重量部との混合溶媒中に浸漬する第2工程、及び混合
溶媒中から引き上げられた被洗浄物を任意の割合におい
て水と完全に相溶する水相溶性有機溶媒中に浸漬する第
3工程よりなることを特徴とする洗浄方法。
A first step of immersing the object to be washed in water; a water-miscible organic solvent which completely dissolves the object to be washed taken up from the water in 100 parts by weight of water and water at an arbitrary ratio;
A second step of immersing in a mixed solvent with 0 parts by weight, and a third step of immersing the object to be cleaned pulled up from the mixed solvent in a water-compatible organic solvent which is completely compatible with water at an arbitrary ratio. A cleaning method characterized by comprising:
【請求項2】水を入れる第1洗浄槽、水100重量部と任
意の割合において水と完全に相溶する水相溶性有機溶媒
40〜200重量部との混合溶媒を入れる第2洗浄槽、及び
任意の割合において水と完全に相溶する水相溶性有機溶
媒を入れる第3洗浄槽よりなり、第3洗浄槽の該水相溶
性有機溶媒を第2洗浄槽に供給する供給管によって第3
洗浄槽と第2洗浄槽とが連結され、第2洗浄槽の混合溶
媒を排出するための排出管が第2洗浄槽に設けられてな
る洗浄装置。
2. A water-miscible organic solvent which is completely compatible with water in an optional ratio with a first washing tank containing water, and 100 parts by weight of water.
A second washing tank containing a mixed solvent of 40 to 200 parts by weight, and a third washing tank containing a water-miscible organic solvent which is completely compatible with water at an arbitrary ratio. A third supply pipe supplies the soluble organic solvent to the second washing tank.
A cleaning apparatus in which a cleaning tank and a second cleaning tank are connected, and a discharge pipe for discharging a mixed solvent in the second cleaning tank is provided in the second cleaning tank.
JP1175580A 1989-07-10 1989-07-10 Cleaning method and apparatus Expired - Fee Related JP2735631B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1175580A JP2735631B2 (en) 1989-07-10 1989-07-10 Cleaning method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1175580A JP2735631B2 (en) 1989-07-10 1989-07-10 Cleaning method and apparatus

Publications (2)

Publication Number Publication Date
JPH0342084A JPH0342084A (en) 1991-02-22
JP2735631B2 true JP2735631B2 (en) 1998-04-02

Family

ID=15998570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1175580A Expired - Fee Related JP2735631B2 (en) 1989-07-10 1989-07-10 Cleaning method and apparatus

Country Status (1)

Country Link
JP (1) JP2735631B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07106447B2 (en) * 1991-03-29 1995-11-15 日本電装株式会社 Vacuum brazing pretreatment method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3888693A (en) * 1972-03-20 1975-06-10 Allied Chem Multi-phase rinse and recovery method

Also Published As

Publication number Publication date
JPH0342084A (en) 1991-02-22

Similar Documents

Publication Publication Date Title
AU668720B2 (en) Stabilization of silicate solutions
US3796602A (en) Process for stripping polymer masks from circuit boards
US4264374A (en) Cleaning process for p-type silicon surface
US5433885A (en) Stabilization of silicate solutions
US6080709A (en) Cleaning solution for cleaning substrates to which a metallic wiring has been applied
US4116714A (en) Post-polishing semiconductor surface cleaning process
JPH06295898A (en) Selective removal of organometallic compound, residue of organosilicic compound and damaged/oxide
EP0812011A2 (en) Cleaning agent
US20010018407A1 (en) Cleaning agent
EP1066365A1 (en) Acidic composition containing fluoride for removal of photoresists and etch residues
CN101356629A (en) Composition and method for recycling semiconductor wafers having low-K dielectric materials thereon
JPWO2009072529A1 (en) Semiconductor device substrate cleaning method and cleaning liquid
EP1168422A3 (en) Method and apparatus for liquid-treating and drying a substrate
JP2018503127A (en) Stripping composition for removing photoresist from a semiconductor substrate
WO2006121580A2 (en) Compositions for the removal of post-etch and ashed photoresist residues and bulk photoresist
CN1645259B (en) Photoresist residue remover composition and manufacture of semiconductor circuit components
JP2735631B2 (en) Cleaning method and apparatus
TW417183B (en) Alkaline water-based solution for cleaning metallized microelectronic workpieces and methods of using same
USRE35017E (en) Method for removing soldering flux with alkaline salts, an alkali metal silicate and anionic polymer
JP4244734B2 (en) Resist stripping solution for substrate process of single wafer cleaning apparatus and stripping method using the same
CN115799077B (en) Copper-clad ceramic substrate step etching method
JPH01303724A (en) Method and device for wet cleaning
JPH056884A (en) Cleaning method for silicon wafer
JP3315273B2 (en) Cleaning method for electronic component mounting board
JPH07126695A (en) Detergent for removing solder paste

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees