KR970003235A - Selective word line driving method of semiconductor memory device - Google Patents
Selective word line driving method of semiconductor memory device Download PDFInfo
- Publication number
- KR970003235A KR970003235A KR1019950018996A KR19950018996A KR970003235A KR 970003235 A KR970003235 A KR 970003235A KR 1019950018996 A KR1019950018996 A KR 1019950018996A KR 19950018996 A KR19950018996 A KR 19950018996A KR 970003235 A KR970003235 A KR 970003235A
- Authority
- KR
- South Korea
- Prior art keywords
- word line
- memory device
- semiconductor memory
- driving method
- line driving
- Prior art date
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- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
1. 청구범위에 기재된 발명이 속한 기술 분야1. TECHNICAL FIELD OF THE INVENTION
본 발명은 반도체 메모리장치의 워드라인 구동방법에 관한 것이다.The present invention relates to a word line driving method of a semiconductor memory device.
2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention
종래의 경우 한번의 액세스동작으로 복수개의 워드라인이 선택되었고 그중 하나의 워드라인에 불량이 발생되는 경우, 상기 복수개의 워드라인중 불량이 발생되지 않는 나머지 워드라인들도 대체되었다. 이러한 대체방법은 리페어 효율상 불리하다.In the related art, when a plurality of word lines are selected by one access operation and a failure occurs in one of the word lines, the remaining word lines in which the failure does not occur among the plurality of word lines are replaced. This alternative is disadvantageous in terms of repair efficiency.
3. 발명의 해결방법의 요지3. Summary of Solution to Invention
본 발명에서 노멀동작에서 사용되지 않는 별도의 패드들을 사용하여 리페어동작시 불량이 발생된 워드라인만을 대체하도록 회로를 구성하였다.In the present invention, the circuit is configured to replace only the word line in which the defect occurs during the repair operation by using separate pads not used in the normal operation.
4. 발명의 중요한 용도4. Important uses of the invention
리페어효율을 높인 반도체 메모리장치.Semiconductor memory device with improved repair efficiency.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 별도의 패드를 이용한 워드라인 구동회로를 보여주는 도면.2 is a diagram illustrating a word line driver circuit using a separate pad.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950018996A KR970003235A (en) | 1995-06-30 | 1995-06-30 | Selective word line driving method of semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950018996A KR970003235A (en) | 1995-06-30 | 1995-06-30 | Selective word line driving method of semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
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KR970003235A true KR970003235A (en) | 1997-01-28 |
Family
ID=66526109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019950018996A KR970003235A (en) | 1995-06-30 | 1995-06-30 | Selective word line driving method of semiconductor memory device |
Country Status (1)
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KR (1) | KR970003235A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10983884B2 (en) | 2017-11-03 | 2021-04-20 | Samsung Electronics Co., Ltd. | Method and non-volatile memory device for repairing defective strings in units of string selection lines |
-
1995
- 1995-06-30 KR KR1019950018996A patent/KR970003235A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10983884B2 (en) | 2017-11-03 | 2021-04-20 | Samsung Electronics Co., Ltd. | Method and non-volatile memory device for repairing defective strings in units of string selection lines |
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WITN | Withdrawal due to no request for examination |