KR970003235A - Selective word line driving method of semiconductor memory device - Google Patents

Selective word line driving method of semiconductor memory device Download PDF

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Publication number
KR970003235A
KR970003235A KR1019950018996A KR19950018996A KR970003235A KR 970003235 A KR970003235 A KR 970003235A KR 1019950018996 A KR1019950018996 A KR 1019950018996A KR 19950018996 A KR19950018996 A KR 19950018996A KR 970003235 A KR970003235 A KR 970003235A
Authority
KR
South Korea
Prior art keywords
word line
memory device
semiconductor memory
driving method
line driving
Prior art date
Application number
KR1019950018996A
Other languages
Korean (ko)
Inventor
강상석
이전형
곽병헌
주재훈
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950018996A priority Critical patent/KR970003235A/en
Publication of KR970003235A publication Critical patent/KR970003235A/en

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Abstract

1. 청구범위에 기재된 발명이 속한 기술 분야1. TECHNICAL FIELD OF THE INVENTION

본 발명은 반도체 메모리장치의 워드라인 구동방법에 관한 것이다.The present invention relates to a word line driving method of a semiconductor memory device.

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

종래의 경우 한번의 액세스동작으로 복수개의 워드라인이 선택되었고 그중 하나의 워드라인에 불량이 발생되는 경우, 상기 복수개의 워드라인중 불량이 발생되지 않는 나머지 워드라인들도 대체되었다. 이러한 대체방법은 리페어 효율상 불리하다.In the related art, when a plurality of word lines are selected by one access operation and a failure occurs in one of the word lines, the remaining word lines in which the failure does not occur among the plurality of word lines are replaced. This alternative is disadvantageous in terms of repair efficiency.

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

본 발명에서 노멀동작에서 사용되지 않는 별도의 패드들을 사용하여 리페어동작시 불량이 발생된 워드라인만을 대체하도록 회로를 구성하였다.In the present invention, the circuit is configured to replace only the word line in which the defect occurs during the repair operation by using separate pads not used in the normal operation.

4. 발명의 중요한 용도4. Important uses of the invention

리페어효율을 높인 반도체 메모리장치.Semiconductor memory device with improved repair efficiency.

Description

반도체 메모리장치의 선택적인 워드라인 구동방법Selective word line driving method of semiconductor memory device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 별도의 패드를 이용한 워드라인 구동회로를 보여주는 도면.2 is a diagram illustrating a word line driver circuit using a separate pad.

Claims (2)

서브블럭으로 나뉘어지고 뱅크단위로 분할된 메모리셀 어레이를 구비하여 한번의 액세스동작에 따라 복수개의 워드라인 활성화되는 반도체 메모리장치의 워드라인 구동방법에 있어서, 별도의 패드를 구비하여 한번의 액세스동작으로 인하여 선택되는 복수개의 워드라인중 불량이 발생되는 워드라인만을 대체함을 특징으로 하는 반도체 메모리장치의 워드라인 구동방법.A word line driving method of a semiconductor memory device in which a plurality of word lines are activated in accordance with one access operation by including memory cell arrays divided into sub-blocks and divided into bank units, wherein a separate pad is provided in one access operation. The word line driving method of the semiconductor memory device, characterized in that for replacing only the word line is a failure occurs among the plurality of selected word lines. 제1항에 있어서, 상기 불량이 발생되는 워드라인이 별도의 패드들을 사용하여 대체하는 것임을 특징으로 하는 반도체 메모리장치의 워드라인 구동방법.The method of claim 1, wherein the word line where the failure occurs is replaced by using separate pads. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950018996A 1995-06-30 1995-06-30 Selective word line driving method of semiconductor memory device KR970003235A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950018996A KR970003235A (en) 1995-06-30 1995-06-30 Selective word line driving method of semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950018996A KR970003235A (en) 1995-06-30 1995-06-30 Selective word line driving method of semiconductor memory device

Publications (1)

Publication Number Publication Date
KR970003235A true KR970003235A (en) 1997-01-28

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Family Applications (1)

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KR1019950018996A KR970003235A (en) 1995-06-30 1995-06-30 Selective word line driving method of semiconductor memory device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10983884B2 (en) 2017-11-03 2021-04-20 Samsung Electronics Co., Ltd. Method and non-volatile memory device for repairing defective strings in units of string selection lines

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10983884B2 (en) 2017-11-03 2021-04-20 Samsung Electronics Co., Ltd. Method and non-volatile memory device for repairing defective strings in units of string selection lines

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