KR970002309A - Semiconductor type dissolved gas sensor - Google Patents

Semiconductor type dissolved gas sensor Download PDF

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Publication number
KR970002309A
KR970002309A KR1019950015672A KR19950015672A KR970002309A KR 970002309 A KR970002309 A KR 970002309A KR 1019950015672 A KR1019950015672 A KR 1019950015672A KR 19950015672 A KR19950015672 A KR 19950015672A KR 970002309 A KR970002309 A KR 970002309A
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South Korea
Prior art keywords
ion
isfet
permeable membrane
gas sensor
sensitive
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KR1019950015672A
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Korean (ko)
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KR0168828B1 (en
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차근식
남학현
김철
하병주
신재호
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차근식
김동진
주식회사 카 스
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Priority to KR1019950015672A priority Critical patent/KR0168828B1/en
Publication of KR970002309A publication Critical patent/KR970002309A/en
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Publication of KR0168828B1 publication Critical patent/KR0168828B1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/28—Electrolytic cell components
    • G01N27/30—Electrodes, e.g. test electrodes; Half-cells
    • G01N27/301—Reference electrodes

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  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

본 발명은 수용액 속에 용해되어 있는 가스의 농도 또는 분압을 측정하는 반도체형 용존 가스 센서에 관한 것이다. 종래의 반도체형 (ISFET형)용존 가스 센서의 경우 내부금속과 측면벽을 형성하기 위한 복잡한 공정을 실시하여야 하고 ISFET의 특성이 시간과 온도에 따라 크게 변화하고, 기준 전극을 소형화하기가 힘들다는등의 문제점으로 인하여, 용존 가스 센서의 대량 생산 및 실용화가 어려웠다. 따라서, 본 발명은 이를 해결하기 위하여 이온 감응 전계 효과 트랜지스터(ISFET), 상기 ISFET의 이온 감응 부위표면에 형성도니 내부용액층, 상기 ISFET표면의 비감응 부위(필드)에 접하면서 상기 내부용액층을 외부 피측정용액과 격리하도록 형성된 가스투과막, 및 상기 가스투과막의 외부에 위치한 기준전극을 구비한 반도체형 용존 가스센서를 제공한다.The present invention relates to a semiconductor type dissolved gas sensor for measuring the concentration or partial pressure of a gas dissolved in an aqueous solution. In the case of the conventional semiconductor type (ISFET) dissolved gas sensor, a complicated process for forming the inner metal and the side wall has to be performed, the characteristics of the ISFET change greatly with time and temperature, and it is difficult to miniaturize the reference electrode. Due to the problem, mass production and practical use of the dissolved gas sensor has been difficult. Therefore, in order to solve this problem, the present invention provides an ion sensitive field effect transistor (ISFET), an internal solution layer formed on the surface of the ion sensitive portion of the ISFET, and an inner solution layer in contact with the non-sensitive portion (field) of the ISFET surface. Provided is a semiconductor-type dissolved gas sensor having a gas permeable membrane formed so as to be isolated from an external solution to be measured, and a reference electrode located outside the gas permeable membrane.

Description

반도체형 용존 가스 센서Semiconductor type dissolved gas sensor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 일실시예의 반도체형 용존 가스 센서를 나타낸 단면도, 제3도는 본 발명의 다른 실시예의 반도체형 용존 가스 센서인 차동형 용존 가스 센서를 도시한 단면도.2 is a cross-sectional view showing a semiconductor dissolved gas sensor of an embodiment of the present invention, Figure 3 is a cross-sectional view showing a differential dissolved gas sensor is a semiconductor dissolved gas sensor of another embodiment of the present invention.

Claims (4)

이온 감응 전계 효과 트랜지스터(ISFET), 상기 ISFET의 이온 감응 부위 표면에 형성된 내부용액층, 상기ISFET 표면의 비감응 부위(field)에 접하면서 상기 내부용액층을 외부 피측정용액과 격리하도록 형성되고, 피측정용액에용해된 가스를 선택적으로 투과하는 가스투과막, 및 상기 가스투과막의 외부에 위치한 기준전극을 구비하는 것을 특징으로 하는 반도체형 용존 가스 센서.An ion sensitive field effect transistor (ISFET), an internal solution layer formed on the surface of the ion sensitive portion of the ISFET, and an inner solution layer in contact with the non-sensitive field on the surface of the ISFET, so as to isolate the internal solution layer from the external measurement solution, And a gas permeable membrane for selectively permeating the gas dissolved in the solution to be measured, and a reference electrode located outside the gas permeable membrane. 제1항에 있어서, 상기 가스 투과막은 피측정용액의 특정이온에 선택적으로 감응하는 고분자막으로서, 전기정항을 낮추기 위한 가소제를 포함하는 것을 특징으로 하는 반도체형 용존가스 센서.The semiconductor type dissolved gas sensor according to claim 1, wherein the gas permeable membrane is a polymer membrane selectively sensitive to a specific ion of a solution to be measured, and includes a plasticizer for lowering an electrical constant. 반도체 기판에 서로 분리되어 형성된 제1, 제2ISFET; 상기 제1의 ISFET에서 이온감응부위와 단차를 갖는이온비감응 부위와 직접 접촉하고, 이온감응 부위에 대해서는 공간을 형성하면서 피측정용액에 용해된 가스를 선택적으로투과시티며, 상기 제2의 ISFET의 전면에 도포된 가스 투과막과, 상기 제1의 ISFET와 상기 가스 투과막의 도포로 형성된공간의 이온 감응 부위 표면에 형성되어 상기 가스 투과막을 투과한 용존가스와 반응하여 이온감응부위에 소정의 전위를인가하는 내부용액층을 구비하는 것을 특징으로 하는 반도체형 용존 가스 센서.First and second ISFETs formed separately from each other on a semiconductor substrate; In the first ISFET, the gas dissolved in the solution to be measured is selectively permeated while directly contacting an ion-insensitive site having a step and an ion-sensitive site, and forming a space for the ion-sensitive site. A predetermined potential at the ion-sensitive site by reacting with a gas permeable membrane applied to the entire surface of the surface and an ion-sensitive site formed on the surface of the ion-sensitive site in the space formed by the application of the first ISFET and the gas-permeable membrane. A semiconductor type dissolved gas sensor, characterized in that it comprises an internal solution layer for applying. 제3항에 있어서, 상기 가스투과막은 이온 선택성 고분자막임을 특징으로 하는 반도체형 용존 가스 센서.4. The semiconductor type dissolved gas sensor according to claim 3, wherein the gas permeable membrane is an ion selective polymer membrane. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950015672A 1995-06-14 1995-06-14 Dissolved gas sensor for semiconductor KR0168828B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950015672A KR0168828B1 (en) 1995-06-14 1995-06-14 Dissolved gas sensor for semiconductor

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Application Number Priority Date Filing Date Title
KR1019950015672A KR0168828B1 (en) 1995-06-14 1995-06-14 Dissolved gas sensor for semiconductor

Publications (2)

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KR970002309A true KR970002309A (en) 1997-01-24
KR0168828B1 KR0168828B1 (en) 1999-03-30

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