KR960043386A - Semiconductor laser diode and manufacturing method thereof - Google Patents

Semiconductor laser diode and manufacturing method thereof Download PDF

Info

Publication number
KR960043386A
KR960043386A KR1019950013251A KR19950013251A KR960043386A KR 960043386 A KR960043386 A KR 960043386A KR 1019950013251 A KR1019950013251 A KR 1019950013251A KR 19950013251 A KR19950013251 A KR 19950013251A KR 960043386 A KR960043386 A KR 960043386A
Authority
KR
South Korea
Prior art keywords
layer
current blocking
laser diode
semiconductor laser
mask
Prior art date
Application number
KR1019950013251A
Other languages
Korean (ko)
Other versions
KR100363240B1 (en
Inventor
신동현
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950013251A priority Critical patent/KR100363240B1/en
Publication of KR960043386A publication Critical patent/KR960043386A/en
Application granted granted Critical
Publication of KR100363240B1 publication Critical patent/KR100363240B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE

Abstract

본 발명은 반도체 레이저 다이오드 및 그 제조방법에 관한 것이다.The present invention relates to a semiconductor laser diode and a method of manufacturing the same.

본 발명은 기판상에 n-버퍼층, n-클래드층, 활성층, p-제1클래드층, 에칭방지층, p-제2클래드층, 스파이크방지층 및 p-제1캡층을 순차적으로 적층 성장하는 단계; 상기 p-제1캡층 상에 소정 패턴의 마스크를 부착하고, 선택적 시각에 의해 리지 스트라이프를 형성하는 단계; 상기 마스크를 이용하고 상기 에칭방지층의 상면 및 리지 스트라이프의 측면에 걸쳐 제1, 제2전류차단층을 선택적으로 성장하는 단계; 및 상기 마스크를 제거하고, 상기 제2전류차단층 및 p-제1캡층 상에 p-제2캡층을 성장하는 단계를 포함한다.The present invention includes sequentially stacking an n-buffer layer, an n-clad layer, an active layer, a p-first clad layer, an anti-etching layer, a p-second clad layer, an anti-spike layer, and a p-first cap layer on a substrate; Attaching a mask of a predetermined pattern on the p-first cap layer and forming a ridge stripe by selective vision; Selectively growing first and second current blocking layers over the top surface of the anti-etching layer and side surfaces of the ridge stripe using the mask; And removing the mask and growing a p-second cap layer on the second current blocking layer and the p-first cap layer.

이와 같은 방법에 의해 제조된 본 발명의 반도체 레이저 다이오드는 전류차단층이 전도성이 낮은 고저항값의 조성물로 2중구조으로 되어 있어 리지 스트라이프 면에 대한 전류 차단층의 광흡수를 없애고 누수전류를 제거할 수 있으므로 충분한 전류협착의 효과를 얻음으로써 소자의 동작전류를 낮추고 신뢰성을 향상시킬 수 있는 장점이 있다.The semiconductor laser diode of the present invention manufactured by the above method has a double-resistance composition of high resistance value with low current blocking layer, which eliminates light absorption of the current blocking layer on the ridge stripe surface and eliminates leakage current. Therefore, it is possible to lower the operating current and improve the reliability of the device by obtaining the effect of sufficient current narrowing.

Description

반도체 레이저 다이오드 및 그 제조방법Semiconductor laser diode and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제5도는 본 발명에 따른 반도체 레이저 다이오드의 제조방법에 의한 반도체 레이저 다이오드의 제조에 있어서, 1차성장 후의 단면구조도, 제6도는 본 발명에 따른 반도체 레이저 다이오드의 제조방법에 의한 반도체 레이저 다이오드의 제조에 있어서, 메사형 리지 스트라이프를 형성한 상태도, 제7도는 본 발명에 따른 반도체 레이저 다이오드의 제조방법에 의한 반도체 레이저 다이오드의 제조에 있어서, 제1, 제2전류차단층을 형성한 상태도, 제8도는 본 발명에 다른 반도체 레이저 다이오드의 제조방법에 의한 반도체 레이저 다이오드의 제조에 있어서, 소장 완성후의 단면구조도.5 is a cross-sectional structure diagram after the first growth in the manufacture of a semiconductor laser diode by the method of manufacturing a semiconductor laser diode according to the present invention, and FIG. 6 is a semiconductor laser diode according to the manufacturing method of the semiconductor laser diode according to the present invention. In manufacturing, a state diagram in which a mesa ridge stripe is formed, and FIG. 7 is a state diagram in which first and second current blocking layers are formed in the manufacture of a semiconductor laser diode by the method of manufacturing a semiconductor laser diode according to the present invention. 8 is a cross-sectional structure diagram after completion of the small intestine in the manufacture of a semiconductor laser diode by the method of manufacturing a semiconductor laser diode according to the present invention.

Claims (6)

그 저면에 전극이 마련되는 기판과, 상기 기판의 상부에 형성되는 것으로 레이저를 발진시키는 레이저 발진층과, 상기 레이저 발진층의 상부에 형성되는 것으로 그 중앙부에는 메사구조의 리지가 형성되어 있으며 전류를 차단하는 전류차단층과, 상기 전류차단층의 상부에 형성되는 캡층을 구비하는 반도체 레이저 다이오드에 있어서, 상기 전류차단층은 2중의 적층구조를 가지며, 전도성이 낮은 고저항값의 조성물로 형성되어 있는 것을 특징으로 하는 반도체 레이저 다이오드.A substrate having an electrode on the bottom thereof, a laser oscillation layer which is formed on the substrate, and a laser oscillation layer that oscillates the laser, and an upper portion of the laser oscillation layer. A semiconductor laser diode having a current blocking layer for blocking and a cap layer formed on the current blocking layer, wherein the current blocking layer has a double stacked structure and is formed of a composition having a low resistance and high resistance. A semiconductor laser diode, characterized in that. 제1항에 있어서, 상기 전류차단층은 In0.5Al0.5P의 화학적 조성을 갖는 것을 특징으로 하는 반도체 레이저 다이오드.The semiconductor laser diode of claim 1, wherein the current blocking layer has a chemical composition of In 0.5 Al 0.5 P. 3. 기판상에 n-버퍼층, n-클래드층, 활성층, p-제1클래드층, 에칭 방지층, p-제2클래드층, 스파이크방지층 및 p-제1캡층을 순차적으로 적층 성장하는 단계; 상기 p-제1캡층 상에 소정 패턴의 마스크를 부착하고, 선택적 시각에 의해 리지 스트라이프를 형성하는 단계; 상기 마스크를 이용하여 상기 에칭방지층의 상면 및 리지 스트라이프의 측면에 걸쳐 제1, 제2전류차단층을 선택적으로 성장하는 단계; 및 상기 마스크를 제거하고, 상기 제2전류차단층 및 p-제1캡층 상에 p-제2캡층을 성장하는 단계를 포함하여 된 것을 특징으로 하는 반도체 레이저 다이오드의 제조방법.Sequentially stacking an n-buffer layer, an n-clad layer, an active layer, a p-first clad layer, an anti-etching layer, a p-second clad layer, an anti-spiking layer, and a p-first cap layer on the substrate; Attaching a mask of a predetermined pattern on the p-first cap layer and forming a ridge stripe by selective vision; Selectively growing first and second current blocking layers over the top surface of the anti-etching layer and the side surfaces of the ridge stripe using the mask; And removing the mask, and growing a p-second cap layer on the second current blocking layer and the p- first cap layer. 제3항에 있어서, 상기 p-제2캡층의 성장단계 이후, p-제2캡층의 상면 및 n-기판의 저면에 전극을 각각 형성하는 단계를 더 포함하여 된 것을 특징으로 하는 반도체 레이저 다이오드의 제조방법.4. The semiconductor laser diode of claim 3, further comprising forming electrodes on an upper surface of the p-second cap layer and a lower surface of the n- substrate after the growth of the p-second cap layer. Manufacturing method. 제3항에 있어서, 상기 제1전류차단층은 MOCVD법에 의해 0.1㎛ 정도의 두께로 성장시키며, 소정 챔버내에서 약 600℃의 온도로 30분~1시간 정도 가열냉각시키는 것을 특징으로 하는 반도체 레이저 다이오드의 제조방법.The semiconductor of claim 3, wherein the first current blocking layer is grown to a thickness of about 0.1 μm by MOCVD and heat-cooled at a temperature of about 600 ° C. for about 30 minutes to 1 hour in a predetermined chamber. Method of manufacturing a laser diode. 제5항에 있어서, 상기 챔버 웨이퍼 표면의 열적 손상을 방지하기 위하여 수소(H2)와 포스핀(PH3) 가스를 주입시키는 것을 특징으로 하는 반도체 레이저 다이오드의 제조방법.The method of claim 5, wherein hydrogen (H 2) and phosphine (PH 3 ) gases are injected to prevent thermal damage to the chamber wafer surface. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950013251A 1995-05-25 1995-05-25 Semiconductor laser diode and its manufacturing method KR100363240B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950013251A KR100363240B1 (en) 1995-05-25 1995-05-25 Semiconductor laser diode and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950013251A KR100363240B1 (en) 1995-05-25 1995-05-25 Semiconductor laser diode and its manufacturing method

Publications (2)

Publication Number Publication Date
KR960043386A true KR960043386A (en) 1996-12-23
KR100363240B1 KR100363240B1 (en) 2003-02-05

Family

ID=37490799

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950013251A KR100363240B1 (en) 1995-05-25 1995-05-25 Semiconductor laser diode and its manufacturing method

Country Status (1)

Country Link
KR (1) KR100363240B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100459888B1 (en) * 1999-02-11 2004-12-03 삼성전자주식회사 A semiconductor laser diode and manufacturing method thereof
KR100883478B1 (en) * 2002-02-26 2009-02-16 주식회사 엘지이아이 Method for manufacturing semiconductor laser diode

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2656397B2 (en) * 1991-04-09 1997-09-24 三菱電機株式会社 Method for manufacturing visible light laser diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100459888B1 (en) * 1999-02-11 2004-12-03 삼성전자주식회사 A semiconductor laser diode and manufacturing method thereof
KR100883478B1 (en) * 2002-02-26 2009-02-16 주식회사 엘지이아이 Method for manufacturing semiconductor laser diode

Also Published As

Publication number Publication date
KR100363240B1 (en) 2003-02-05

Similar Documents

Publication Publication Date Title
US5247533A (en) Gallium nitride group compound semiconductor laser diode
JP2935415B2 (en) Semiconductor structure
US4249967A (en) Method of manufacturing a light-emitting diode by liquid phase epitaxy
US4220960A (en) Light emitting diode structure
KR960043386A (en) Semiconductor laser diode and manufacturing method thereof
US5887011A (en) Semiconductor laser
JPS6077482A (en) Manufacture of semiconductor laser
JPS6381887A (en) Semiconductor laser device and manufacture of the same
JPS637691A (en) Semiconductor laser device
JPH0666512B2 (en) Method for manufacturing semiconductor laser
KR100287204B1 (en) Semiconductor laser diode of selective buried ridge type and manufacturing method thereof
JPS63120491A (en) Semiconductor laser
KR950012902A (en) Semiconductor laser diode and manufacturing method thereof
JPS6361793B2 (en)
JPS58148481A (en) Semiconductor laser having embedded heterogeneous structure
JPS58194386A (en) Manufacture of semiconductor element
JPS6244440B2 (en)
JPH0213943B2 (en)
KR100265804B1 (en) Semiconductor laser diode
JPS58178583A (en) Semiconductor laser
JPH0922894A (en) Method of manufacturing compound semiconductor element
KR960002985A (en) Semiconductor laser diode and manufacturing method thereof
KR960032820A (en) Short wavelength semiconductor laser device and manufacturing method thereof
JPH01189185A (en) Manufacture of semiconductor laser having embedded structure
KR960043387A (en) Compound Semiconductor Laser Diode and Manufacturing Method Thereof

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20070918

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee