KR960043048A - Method of forming channel junction region of semiconductor device - Google Patents

Method of forming channel junction region of semiconductor device Download PDF

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Publication number
KR960043048A
KR960043048A KR1019950010981A KR19950010981A KR960043048A KR 960043048 A KR960043048 A KR 960043048A KR 1019950010981 A KR1019950010981 A KR 1019950010981A KR 19950010981 A KR19950010981 A KR 19950010981A KR 960043048 A KR960043048 A KR 960043048A
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KR
South Korea
Prior art keywords
junction region
channel junction
semiconductor device
forming
forming channel
Prior art date
Application number
KR1019950010981A
Other languages
Korean (ko)
Inventor
양홍선
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950010981A priority Critical patent/KR960043048A/en
Publication of KR960043048A publication Critical patent/KR960043048A/en

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Abstract

본 발명은 반도체 소자의 채널접합영역 형성방법에 관한 것으로, 매립채널(Buried channel)구조를 갖는 MOS트랜지스터의 채널접합영역을 형성함에 있어, 접합깊이를 감소시키기 위해 문턱전(Threshold Voltage)을 조절하기 위한 불순물이온주입 후 실리콘기판을 리세스(Recess)구조조 식각하여 얕은 채널접합영역을 형성하므로써 소자의 동작특성을 향상시킬 수 있도록 한 반도체 소자의 채널접합영역 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a channel junction region of a semiconductor device, and in forming a channel junction region of a MOS transistor having a buried channel structure, to adjust a threshold voltage to reduce the junction depth. The present invention relates to a method for forming a channel junction region of a semiconductor device in which a shallow channel junction region is formed by etching recessed silicon substrates after implantation of impurity ions to form a shallow channel junction region.

Description

반도체 소자의 채널접합영역 형성방법Method of forming channel junction region of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1 및 제2도는 본 발명에 따른 반도체 소자의 채널접합영역 형성방법을 설명하기 위한 소자의 단면도.1 and 2 are cross-sectional views of a device for explaining a method of forming a channel junction region of a semiconductor device according to the present invention.

Claims (2)

반도체 소자의 채널접합영역 형성방법에 있어서, 필드산화막이 형성된 실리콘기판상에 희생산화막을 형성한 후 문턱전압을 조절하기 위한 불순물이온을 주입하는 단계와, 상기 단계로부터 접합깊이를 감소시키기위해 세정용액을 이용하여 상기 실리콘기판을 리세스구조가 되도록 식각하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 채널접합영역 형성방법.A method of forming a channel junction region of a semiconductor device, comprising: implanting impurity ions for controlling a threshold voltage after forming a sacrificial oxide film on a silicon substrate on which a field oxide film is formed; and cleaning solution to reduce the junction depth from the step And etching the silicon substrate so as to have a recess structure. 제1항에 있어서, 상기 세정용액은 암모니아 또는, HNO3용액인 것을 특징으로 하는 반도체 소자의 채널접합영역 형성방법법.2. The method of claim 1, wherein the cleaning solution is ammonia or HNO 3 solution. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950010981A 1995-05-04 1995-05-04 Method of forming channel junction region of semiconductor device KR960043048A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950010981A KR960043048A (en) 1995-05-04 1995-05-04 Method of forming channel junction region of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950010981A KR960043048A (en) 1995-05-04 1995-05-04 Method of forming channel junction region of semiconductor device

Publications (1)

Publication Number Publication Date
KR960043048A true KR960043048A (en) 1996-12-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950010981A KR960043048A (en) 1995-05-04 1995-05-04 Method of forming channel junction region of semiconductor device

Country Status (1)

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KR (1) KR960043048A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100255170B1 (en) * 1997-06-20 2000-05-01 김영환 Method of manufacturing field oxide of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100255170B1 (en) * 1997-06-20 2000-05-01 김영환 Method of manufacturing field oxide of semiconductor device

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