KR960043048A - Method of forming channel junction region of semiconductor device - Google Patents
Method of forming channel junction region of semiconductor device Download PDFInfo
- Publication number
- KR960043048A KR960043048A KR1019950010981A KR19950010981A KR960043048A KR 960043048 A KR960043048 A KR 960043048A KR 1019950010981 A KR1019950010981 A KR 1019950010981A KR 19950010981 A KR19950010981 A KR 19950010981A KR 960043048 A KR960043048 A KR 960043048A
- Authority
- KR
- South Korea
- Prior art keywords
- junction region
- channel junction
- semiconductor device
- forming
- forming channel
- Prior art date
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
본 발명은 반도체 소자의 채널접합영역 형성방법에 관한 것으로, 매립채널(Buried channel)구조를 갖는 MOS트랜지스터의 채널접합영역을 형성함에 있어, 접합깊이를 감소시키기 위해 문턱전(Threshold Voltage)을 조절하기 위한 불순물이온주입 후 실리콘기판을 리세스(Recess)구조조 식각하여 얕은 채널접합영역을 형성하므로써 소자의 동작특성을 향상시킬 수 있도록 한 반도체 소자의 채널접합영역 형성방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a channel junction region of a semiconductor device, and in forming a channel junction region of a MOS transistor having a buried channel structure, to adjust a threshold voltage to reduce the junction depth. The present invention relates to a method for forming a channel junction region of a semiconductor device in which a shallow channel junction region is formed by etching recessed silicon substrates after implantation of impurity ions to form a shallow channel junction region.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1 및 제2도는 본 발명에 따른 반도체 소자의 채널접합영역 형성방법을 설명하기 위한 소자의 단면도.1 and 2 are cross-sectional views of a device for explaining a method of forming a channel junction region of a semiconductor device according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950010981A KR960043048A (en) | 1995-05-04 | 1995-05-04 | Method of forming channel junction region of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950010981A KR960043048A (en) | 1995-05-04 | 1995-05-04 | Method of forming channel junction region of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960043048A true KR960043048A (en) | 1996-12-21 |
Family
ID=66523724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950010981A KR960043048A (en) | 1995-05-04 | 1995-05-04 | Method of forming channel junction region of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960043048A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100255170B1 (en) * | 1997-06-20 | 2000-05-01 | 김영환 | Method of manufacturing field oxide of semiconductor device |
-
1995
- 1995-05-04 KR KR1019950010981A patent/KR960043048A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100255170B1 (en) * | 1997-06-20 | 2000-05-01 | 김영환 | Method of manufacturing field oxide of semiconductor device |
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