KR960042952A - Contact window for metal-to-metal contact and its formation method - Google Patents
Contact window for metal-to-metal contact and its formation method Download PDFInfo
- Publication number
- KR960042952A KR960042952A KR1019950011920A KR19950011920A KR960042952A KR 960042952 A KR960042952 A KR 960042952A KR 1019950011920 A KR1019950011920 A KR 1019950011920A KR 19950011920 A KR19950011920 A KR 19950011920A KR 960042952 A KR960042952 A KR 960042952A
- Authority
- KR
- South Korea
- Prior art keywords
- metal film
- selective metal
- forming
- selective
- tungsten
- Prior art date
Links
Abstract
본 발명은 반사율이 심한 금속층 상부에도 접촉불량 및 접촉저항을 증대시키기 않으면서 전기적으로 접촉시킬 수 있는 반도체 소자의 접촉성 및 그 형성방법에 관한 것으로, 반도체 소자 제조공정중 금속층과 금속층간의 전기적 연결을 위한 접촉창에 있어서, 상기 접촉창은 티타늄텅스텐, 텅스텐, 티타늄텅스텐의 적층구조로 이루어지며, 하부의 금속 패턴 상에 제1선택적금속막을 형성하는 단계; 상기 제1선택적금속막 상부에 제2선택적금속막을 형성한 후, 상기 제2선택적금속막막, 제1선택적금속막을 선택적으로 식각하는 단계; 상기 구조 전체 상부에 평탄화절연층을 형성하고, 에치백 공정을 통해 상기 제2선택적금속막을 일부 노출시키는 단계; 상기 제2선택적금속막 상부에 다시 제1선택적금속막을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contactability of a semiconductor device and a method of forming the semiconductor device, which can be electrically contacted with a high reflectance without increasing contact failure and contact resistance. In the contact window for, the contact window is made of a titanium tungsten, tungsten, titanium tungsten laminated structure, forming a first selective metal film on the lower metal pattern; Forming a second selective metal film on the first selective metal film, and then selectively etching the second selective metal film and the first selective metal film; Forming a planarization insulating layer over the entire structure, and partially exposing the second selective metal film through an etch back process; And forming a first selective metal film on the second selective metal film again.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2D도는 본 발명의 일실시예에 따른 접촉창 형성과정을 나타내는 단면도.2D is a cross-sectional view illustrating a process of forming a contact window according to an embodiment of the present invention.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950011920A KR960042952A (en) | 1995-05-15 | 1995-05-15 | Contact window for metal-to-metal contact and its formation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950011920A KR960042952A (en) | 1995-05-15 | 1995-05-15 | Contact window for metal-to-metal contact and its formation method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960042952A true KR960042952A (en) | 1996-12-21 |
Family
ID=66523466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950011920A KR960042952A (en) | 1995-05-15 | 1995-05-15 | Contact window for metal-to-metal contact and its formation method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960042952A (en) |
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1995
- 1995-05-15 KR KR1019950011920A patent/KR960042952A/en not_active Application Discontinuation
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WITN | Withdrawal due to no request for examination |