KR960042952A - Contact window for metal-to-metal contact and its formation method - Google Patents

Contact window for metal-to-metal contact and its formation method Download PDF

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Publication number
KR960042952A
KR960042952A KR1019950011920A KR19950011920A KR960042952A KR 960042952 A KR960042952 A KR 960042952A KR 1019950011920 A KR1019950011920 A KR 1019950011920A KR 19950011920 A KR19950011920 A KR 19950011920A KR 960042952 A KR960042952 A KR 960042952A
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KR
South Korea
Prior art keywords
metal film
selective metal
forming
selective
tungsten
Prior art date
Application number
KR1019950011920A
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Korean (ko)
Inventor
황준
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950011920A priority Critical patent/KR960042952A/en
Publication of KR960042952A publication Critical patent/KR960042952A/en

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Abstract

본 발명은 반사율이 심한 금속층 상부에도 접촉불량 및 접촉저항을 증대시키기 않으면서 전기적으로 접촉시킬 수 있는 반도체 소자의 접촉성 및 그 형성방법에 관한 것으로, 반도체 소자 제조공정중 금속층과 금속층간의 전기적 연결을 위한 접촉창에 있어서, 상기 접촉창은 티타늄텅스텐, 텅스텐, 티타늄텅스텐의 적층구조로 이루어지며, 하부의 금속 패턴 상에 제1선택적금속막을 형성하는 단계; 상기 제1선택적금속막 상부에 제2선택적금속막을 형성한 후, 상기 제2선택적금속막막, 제1선택적금속막을 선택적으로 식각하는 단계; 상기 구조 전체 상부에 평탄화절연층을 형성하고, 에치백 공정을 통해 상기 제2선택적금속막을 일부 노출시키는 단계; 상기 제2선택적금속막 상부에 다시 제1선택적금속막을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contactability of a semiconductor device and a method of forming the semiconductor device, which can be electrically contacted with a high reflectance without increasing contact failure and contact resistance. In the contact window for, the contact window is made of a titanium tungsten, tungsten, titanium tungsten laminated structure, forming a first selective metal film on the lower metal pattern; Forming a second selective metal film on the first selective metal film, and then selectively etching the second selective metal film and the first selective metal film; Forming a planarization insulating layer over the entire structure, and partially exposing the second selective metal film through an etch back process; And forming a first selective metal film on the second selective metal film again.

Description

금속배선간 접촉을 위한 접촉창 및 그 형성방법Contact window for metal-to-metal contact and its formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2D도는 본 발명의 일실시예에 따른 접촉창 형성과정을 나타내는 단면도.2D is a cross-sectional view illustrating a process of forming a contact window according to an embodiment of the present invention.

Claims (5)

반도체 소자 제조공정중 금속층과 금속층간의 전기적 연결을 위한 접촉창에 있어서, 상기 접촉창은 티타늄텅스텐, 텅스텐, 티타늄텅스텐의 적층구조로 이루어지는 것을 특징으로 하는 반도체 소자의 접촉창.A contact window for electrical connection between a metal layer and a metal layer during a semiconductor device manufacturing process, wherein the contact window comprises a laminated structure of titanium tungsten, tungsten and titanium tungsten. 반도체 소자 제조공정중 금속층과 금속층간의 전기적 연결을 위한 접촉창 형성방법에 있어서, 하부의 금속 패턴 상에 제1선택적금속막을 형성하는 단계; 상기 제1선택적금속막 상부에 제2선택적금속막을 형성한 후, 상기 제2선택적금속막, 제1선택적금속막을 선택적으로 식각하는 단계; 상기 구조 전체 상부에 평탄화절연층을 형성하고, 에치백 공정을 통해 상기 제2선택적금속막을 일부 노출시키는 단계; 상기 제2선택적금속막 상부에 다시 제1선택적금속막을 형성하는 단계를 포함하여 이루이지는 것을 특징으로 하는 반도체 소자의 접촉창 형성방법.A method of forming a contact window for electrical connection between a metal layer and a metal layer during a semiconductor device manufacturing process, the method comprising: forming a first selective metal film on a lower metal pattern; Selectively forming the second selective metal film and the first selective metal film after forming a second selective metal film on the first selective metal film; Forming a planarization insulating layer over the entire structure, and partially exposing the second selective metal film through an etch back process; And forming a first selective metal film on the second selective metal film again. 제1항에 있어서, 상기 제1선택적금속막은 티타늄텅스텐막으로 이루어지는 것을 특징으로 하는 반도체 소자의 접촉장 형성방법.The method of claim 1, wherein the first selective metal film is a titanium tungsten film. 제3항에 있어서, 상기 제2선택적금속막은 텅스텐막으로 이루어지는 것을 특징으로 하는 반도체 소자의 접촉장 형성방법.4. The method of claim 3, wherein the second selective metal film is a tungsten film. 제4항에 있어서, 상기 텅스텐막은 화학기상증착법에 의해 증착되는 것을 특징으로 하는 반도체 소자의 접촉장 형성방법.The method according to claim 4, wherein the tungsten film is deposited by chemical vapor deposition. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950011920A 1995-05-15 1995-05-15 Contact window for metal-to-metal contact and its formation method KR960042952A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950011920A KR960042952A (en) 1995-05-15 1995-05-15 Contact window for metal-to-metal contact and its formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950011920A KR960042952A (en) 1995-05-15 1995-05-15 Contact window for metal-to-metal contact and its formation method

Publications (1)

Publication Number Publication Date
KR960042952A true KR960042952A (en) 1996-12-21

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KR1019950011920A KR960042952A (en) 1995-05-15 1995-05-15 Contact window for metal-to-metal contact and its formation method

Country Status (1)

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KR (1) KR960042952A (en)

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