KR960035636A - Current-Amplified Sense Amplifiers - Google Patents

Current-Amplified Sense Amplifiers Download PDF

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Publication number
KR960035636A
KR960035636A KR1019950004624A KR19950004624A KR960035636A KR 960035636 A KR960035636 A KR 960035636A KR 1019950004624 A KR1019950004624 A KR 1019950004624A KR 19950004624 A KR19950004624 A KR 19950004624A KR 960035636 A KR960035636 A KR 960035636A
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KR
South Korea
Prior art keywords
current
data bus
sense amplifier
amplifying means
transistor pair
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Application number
KR1019950004624A
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Korean (ko)
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KR0172517B1 (en
Inventor
장성준
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019950004624A priority Critical patent/KR0172517B1/en
Publication of KR960035636A publication Critical patent/KR960035636A/en
Application granted granted Critical
Publication of KR0172517B1 publication Critical patent/KR0172517B1/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers

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  • Static Random-Access Memory (AREA)

Abstract

본 발명은 외부에서 입력되는 인에이블 신호의 제어를 받아 메모리 소자의 데이터버스 및 데이터버스바의 전류차를 감지하여 상기 메모리 소자의 데이터버스 및 데이터버스바의 전류차 및 전압차를 더욱 증폭하는 전류센스증폭부: 상기 전류센스증폭부에서 증폭된 전압차를 입력받아 최종적으로 증폭된 전압을 출력(Sout)하는 전압센스증폭부를 구비하는 것을 특징으로 하는 전류증폭형 센스 증폭기에 관한 것으로, 낮은 공급전압 및 셀의 전류변화에도 안정된 증폭 및 고속동작을 이루어 소자의 신뢰성을 향상시키는 효과를 가져온다.The present invention senses the current difference between the data bus and the data bus bar of the memory device under the control of the enable signal input from the outside to further amplify the current difference and the voltage difference between the data bus and the data bus bar of the memory device. Sense amplifier: The current amplification type sense amplifier, characterized in that it comprises a voltage sense amplifier for receiving the voltage difference amplified by the current sense amplifier and outputs the amplified finally (Sout), low supply voltage And stable amplification and high speed operation even in the current change of the cell to bring the effect of improving the reliability of the device.

Description

전류증폭형 센스 증폭기Current-Amplified Sense Amplifiers

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 따른 센스 증폭기 회로도, 제3도는 SRAM 셀의 상세도.2 is a sense amplifier circuit diagram according to the present invention, and FIG. 3 is a detailed view of an SRAM cell.

Claims (4)

외부에서 입력되는 인에이블 신호의 제어를 받아 메모리 소자의 데이터버스 및 데이터버스바의 전류차를 감지하여 상기 메모리소자의 데이터버스 및 데이터버스바의 전류차 및 전압차를 더욱 증폭하는 전류센스증폭부: 상기 전류센스증폭부에서 증폭된 전압차를 입력받아 최종적으로 증폭된 전압을 출력하는 전압센스증폭부를 구비하는 것을 특징으로 하는 전류증폭형 센스 증폭기.A current sense amplifying unit which senses the current difference between the data bus and the data bus bar of the memory device under the control of the enable signal input from the outside, and further amplifies the current difference and the voltage difference between the data bus and the data bus bar of the memory device. A current amplification type sense amplifier, comprising: a voltage sense amplifier configured to receive a voltage difference amplified by the current sense amplifier and output a final amplified voltage. 제1항에 있어서, 상기 전류센스증폭부는 상기 데이터버스 및 데이터버스바 중에서 상대적으로 낮은 전류가 흐르는 쪽은 더욱 낮은 전류가 흐르게 하고, 상대적으로 높은 전류가 흐르는 쪽은 더욱 높은 전류가 흐르도록 전류폐쇄회로로 구성된 제1전류증폭 수단; 상기 인에이블신호의 제어에 의해 온/오프되며, 상기 제1전류증폭수단 출력전압의 제어를 받아 자체 전류 경로상의 전류량을 조절한 후 다시 상기 제1전류증폭 수단의 출력전압을 증폭하는 제2전류증폭 수단을 구비하는 것을 특징으로 하는 전류증폭형 센스 증폭기.The current sensing amplifier of claim 1, wherein the current sense amplifier is configured such that a lower current flows in the lower side of the data bus and a data bus bar, and a higher current flows in a side where the relatively high current flows. First current amplifying means composed of a circuit; A second current that is turned on / off by the control of the enable signal and is controlled by the first current amplifying means output voltage to adjust an amount of current on its current path and then amplifies the output voltage of the first current amplifying means And amplifying means. 제2항에 있어서, 상기 제1전류증폭 수단은 공급전원단자와 상기 제2전류증폭수단 사이의 전류경로상에 차례로 형성되는 PMOS 트랜지스터쌍과 NMOS 트랜지스터쌍으로 이루어지되, 상기 PMOS 트랜지스터쌍은 상기 데이터버스 및 데이터버스바중 어느 하나에 공통 게이트 단자가 연결되며 NMOS 트랜지스터쌍은 상기 PMOS 트랜지스터쌍의 게이트 단자에 연결되지 않은 데이터버스 및 데이터버스바 중 다른 하나에 연결되어 이루어진 다수의 전류폐쇄회로로 이루어지는 것을 특징으로 하는 전류증폭형 센스 증폭기.3. The PMOS transistor pair of claim 2, wherein the first current amplifying means comprises a PMOS transistor pair and an NMOS transistor pair sequentially formed on a current path between a supply power supply terminal and the second current amplifying means, wherein the PMOS transistor pair is the data. A common gate terminal is connected to one of a bus and a data bus bar, and the NMOS transistor pair is composed of a plurality of current closed circuits connected to the other of the data bus and the data bus bar which are not connected to the gate terminal of the PMOS transistor pair. A current amplifying sense amplifier, characterized in that. 제3항에 있어서, 상기 제2전류증폭수단은 상기 제1전류증폭수단의 출력을 드레인에 입력하고 동시에 상대트랜지스터의 게이트에 피드백시키는 NMOS 트랜지스터쌍과, 상기 인에이블신호의 제어에 의해 상기 NMOS 트랜지스터쌍의 공통 소오스와 접지전원단자 사이를 스위칭하는 스위칭 수단을 구비하는 것을 특징으로 하는 전류증폭형 센스 증폭기.4. The NMOS transistor according to claim 3, wherein the second current amplifying means comprises an NMOS transistor pair for inputting an output of the first current amplifying means to a drain and simultaneously feeding back a gate of a relative transistor, and the NMOS transistor under control of the enable signal. And a switching means for switching between the common source of the pair and the ground power supply terminal. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950004624A 1995-03-07 1995-03-07 Sense amplifier KR0172517B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950004624A KR0172517B1 (en) 1995-03-07 1995-03-07 Sense amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950004624A KR0172517B1 (en) 1995-03-07 1995-03-07 Sense amplifier

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KR960035636A true KR960035636A (en) 1996-10-24
KR0172517B1 KR0172517B1 (en) 1999-03-30

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100329737B1 (en) * 1999-06-30 2002-03-21 박종섭 Low power and high speed latch type current sense amplifier
KR100382734B1 (en) * 2001-02-26 2003-05-09 삼성전자주식회사 Input-output line sense amplifier having small current consumption and small direct current

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100842899B1 (en) * 2001-10-23 2008-07-02 주식회사 하이닉스반도체 Current sense amplifier circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100329737B1 (en) * 1999-06-30 2002-03-21 박종섭 Low power and high speed latch type current sense amplifier
KR100382734B1 (en) * 2001-02-26 2003-05-09 삼성전자주식회사 Input-output line sense amplifier having small current consumption and small direct current

Also Published As

Publication number Publication date
KR0172517B1 (en) 1999-03-30

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