KR960029493A - Method for injecting far-infrared radiant into aluminum substrate and aluminum substrate prepared accordingly - Google Patents

Method for injecting far-infrared radiant into aluminum substrate and aluminum substrate prepared accordingly Download PDF

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Publication number
KR960029493A
KR960029493A KR1019950000577A KR19950000577A KR960029493A KR 960029493 A KR960029493 A KR 960029493A KR 1019950000577 A KR1019950000577 A KR 1019950000577A KR 19950000577 A KR19950000577 A KR 19950000577A KR 960029493 A KR960029493 A KR 960029493A
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South Korea
Prior art keywords
aluminum substrate
infrared radiation
far
aluminum
injecting
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Application number
KR1019950000577A
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Korean (ko)
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최기봉
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최기봉
주식회사 Lg 스타금속
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Application filed by 최기봉, 주식회사 Lg 스타금속 filed Critical 최기봉
Priority to KR1019950000577A priority Critical patent/KR960029493A/en
Publication of KR960029493A publication Critical patent/KR960029493A/en

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Abstract

본 발명은 알루미늄기물에 원적외선 복사체를 주입하는 방법 및 원적외선 복사체를 내장하고 있는 알루미늄기물에 관한 것으로, 특히, 알루미늄 기물에 원적외선 복사체를 주압하므로서 알루미늄 기물로부터 원적외선을 방출토록 하여 가열특성 및 에너지 흡수 효과가 탁월하고, 표면과 내부의 열전달 시간차를 줄일 수 있고, 항균성, 방취성 등이 우수한 알루미늄 기물을 제조하는 방법에 관한 것이다.The present invention relates to a method for injecting far infrared radiation into an aluminum substrate, and to an aluminum substrate containing a far infrared radiation. In particular, by heating the far infrared radiation into an aluminum substrate to emit far infrared rays from the aluminum substrate, the heating characteristics and energy absorption effect is improved. The present invention relates to a method for producing an aluminum base that is excellent, can reduce the heat transfer time difference between the surface and the inside, and has excellent antibacterial and deodorizing properties.

본 발명은 알루미늄 기물표면을 양극 산화처리하여 다공성 피막을 형성하는 단계와, 상기 양극산화피막처리된 알루미늄을 수세 및 건조한 후 표면에 형성된 미세공에 액상의 원적외선 복사체를 주입하는 단계와, 상기 액상의 원적외선 복사체가 주입된 미세공을 봉공처리하는 단계와, 상기 봉공처리된 알루미늄 기물을 탕세하는 단계로 구성된다.The present invention comprises the steps of anodizing the aluminum substrate surface to form a porous coating, and washing and drying the anodized aluminum to inject liquid far-infrared radiation into the micropores formed on the surface, and Sealing the micropores into which the far-infrared radiation is injected; and washing the sealed aluminum substance with water.

Description

알루미늄기물에 원적외선 복사체를 주입하는 방법 및 이에 따라 제조된 알루미늄기물Method for injecting far-infrared radiant into aluminum substrate and aluminum substrate prepared accordingly

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (4)

알루미늄 기물표면을 양극 산화처리하여 다공성 피막을 형성하는 단계와, 상기 양극산화피막처리된 알루미늄을 수세 및 건조한 후 표면에 형성된 미세공에 액상의 원적외선 복사체를 주입하는 단계와, 상기 액상의 원적외선 복사체가 주입된 미세공을 봉공처리하는 단계와, 상기 봉공처리된 알루미늄 기물을 탕세하는 단계로 이루어진 것을 특징으로 하는 알루미늄 기물에 원적외선 복사체를 주입하는 방법.Anodic oxidation of the aluminum substrate surface to form a porous coating, washing and drying the anodized aluminum, and injecting a liquid far-infrared radiation into the fine pores formed on the surface, and the liquid far-infrared radiation Sealing the injected micro-pores, and the method of injecting far-infrared radiation into the aluminum substrate, characterized in that the step of washing the sealed aluminum substrate. 제1항에 있어서, 상기 미세공에 액상의 원적외선 복사체를 주입하는 단계는 알루미늄을 기물을 액상의 원적외선 복사체에 침지하여 주입하는 것을 특징으로 하는 알루미늄 기물에 원적외선 복사체를 주입하는 방법.The method of claim 1, wherein injecting the liquid far-infrared radiation into the micropores comprises injecting aluminum into the liquid-infrared radiation and injecting the far-infrared radiation into the aluminum substrate. 제1항에 있어서, 상기 봉공처리하는 단계는 암모니아가 10% 함유된 수용액의 수증기로를 3~5분간 접촉시킴으로서 이루어지는 것을 특징으로 하는 알루미늄 기물에 원적외선 복사체를 주입하는 방법.The method of claim 1, wherein the sealing is performed by contacting water vapor of an aqueous solution containing 10% ammonia for 3 to 5 minutes. 표면이 양극산화 피막 처리되어 있는 알루미늄제 기물에 있어서, 상기 양극산화피막처리에 의해 형성된 미세공내에 액상의 원적외선 복사체가 주입되어 봉공 처리되어 있는 것을 특징으로 하는 원적외선 복사체를 내장하고 있는 알루미늄 기물.An aluminum substrate whose surface is anodized, wherein the liquid far-infrared radiant is injected into the micropores formed by the anodized coating to seal the aluminum substrate. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950000577A 1995-01-14 1995-01-14 Method for injecting far-infrared radiant into aluminum substrate and aluminum substrate prepared accordingly KR960029493A (en)

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KR1019950000577A KR960029493A (en) 1995-01-14 1995-01-14 Method for injecting far-infrared radiant into aluminum substrate and aluminum substrate prepared accordingly

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KR1019950000577A KR960029493A (en) 1995-01-14 1995-01-14 Method for injecting far-infrared radiant into aluminum substrate and aluminum substrate prepared accordingly

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KR960029493A true KR960029493A (en) 1996-08-17

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101485370B1 (en) * 2014-07-18 2015-01-26 손치호 A Far Infrared Rays Radiator And the Manufacturing Method Obtained by An Anodizing Treatment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101485370B1 (en) * 2014-07-18 2015-01-26 손치호 A Far Infrared Rays Radiator And the Manufacturing Method Obtained by An Anodizing Treatment

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