KR960026903A - Manufacturing method of thin film transistor for liquid crystal display device - Google Patents

Manufacturing method of thin film transistor for liquid crystal display device Download PDF

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Publication number
KR960026903A
KR960026903A KR1019940035322A KR19940035322A KR960026903A KR 960026903 A KR960026903 A KR 960026903A KR 1019940035322 A KR1019940035322 A KR 1019940035322A KR 19940035322 A KR19940035322 A KR 19940035322A KR 960026903 A KR960026903 A KR 960026903A
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KR
South Korea
Prior art keywords
metal pattern
gate metal
anodized
liquid crystal
display device
Prior art date
Application number
KR1019940035322A
Other languages
Korean (ko)
Other versions
KR0152785B1 (en
Inventor
송인덕
Original Assignee
구자홍
Lg 전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 구자홍, Lg 전자주식회사 filed Critical 구자홍
Priority to KR1019940035322A priority Critical patent/KR0152785B1/en
Publication of KR960026903A publication Critical patent/KR960026903A/en
Application granted granted Critical
Publication of KR0152785B1 publication Critical patent/KR0152785B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor

Abstract

본 발명은 액정표시소자용 박막트랜지스터의 제조방법에 관한 것으로, 기판상에 양극산화되지 않는 물질이나 양극산화되더라도 투명전극 식각용 에천트에 강한 물질을 증착시킨 후 패터닝하여 제1게이트용 금속패턴을 형성하는 공정과, 상기 제1게이트용 금속패턴 위에 양극산화가 가능한 물질을 증착시킨 후 상기 제1게이트용 금속패턴의 폭보다 넓게 패터닝하여 제2게이트용 금속패턴을 형성하는 공정과, 상기 제2게이트용 금속패턴을 모두 양극산화시켜 양극산화막을 형성하는 공정을 포함하여 구성되며, 상기와 같이 양극산화되지 않는 물질이나 양극산화되더라도 투명전극 식각용 에천트에 강한 물질로 제1게이트용 금속패턴을 형성함으로써 절연신뢰성을 향상시킬 수 있는 효과가 있다.The present invention relates to a method of manufacturing a thin film transistor for a liquid crystal display device, and to deposit a material that is not anodized on the substrate or a strong material on the etchant for etching the transparent electrode even if it is anodized to pattern the first gate metal pattern Forming a second gate metal pattern by depositing a material capable of anodizing on the first gate metal pattern, and then patterning the pattern to be wider than the width of the first gate metal pattern; And anodizing the gate metal pattern to form an anodic oxide layer. The first gate metal pattern is formed of a material that is not anodized as described above or a material resistant to the etchant for etching the transparent electrode even when anodized. By forming it, there exists an effect which can improve insulation reliability.

Description

액정표시소자용 박막트랜지스터의 제조방법Manufacturing method of thin film transistor for liquid crystal display device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 의한 액정표시소자용 박막트랜지스터의 제조방법을 도시한 단면도.2 is a cross-sectional view showing a method of manufacturing a thin film transistor for a liquid crystal display device according to the present invention.

Claims (2)

기판상에 양극산화되지 않는 물질이나 양극산화되더라도 투명전극 식각용 에천트에 강한 물질을 증착시킨 후 패터닝하여 제1게이트용 금속패턴을 형성하는 공정과, 상기 제1게이트용 금속패턴 위체 양극산화가 가능한 물질을 증착시킨 후 상기 제1게이트용 금속패턴의 폭보다 넓게 패터닝하여 제2게이트용 금속패턴을 형성하는 공정과, 상기 제2게이트용 금속패턴을 모두 양극산화시켜 양극산화막을 형성하는 공정을 포함하여 구성된 것을 특징으로 하는 액정표시소자용 박막트랜지스터의 제조방법.Depositing and patterning a material that is not anodized on the substrate or a strong material on the etchant for etching the transparent electrode to form a first gate metal pattern, and anodizing the metal pattern for the first gate Forming a second gate metal pattern by depositing a material that is wider than the width of the first gate metal pattern, and then anodizing the second gate metal pattern to form an anodized film. A method of manufacturing a thin film transistor for a liquid crystal display device, characterized in that comprising a. 제1항에 있어서, 상기 제1게이트용 금속패턴은 단면 테이퍼 각이 45°이하임을 특징으로 하는 액정표시소자용 박막트랜지스터의 제조방법.The method of claim 1, wherein the first gate metal pattern has a cross-sectional taper angle of 45 ° or less. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940035322A 1994-12-20 1994-12-20 Thin film transistor for lcd device KR0152785B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940035322A KR0152785B1 (en) 1994-12-20 1994-12-20 Thin film transistor for lcd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940035322A KR0152785B1 (en) 1994-12-20 1994-12-20 Thin film transistor for lcd device

Publications (2)

Publication Number Publication Date
KR960026903A true KR960026903A (en) 1996-07-22
KR0152785B1 KR0152785B1 (en) 1998-10-01

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ID=19402429

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940035322A KR0152785B1 (en) 1994-12-20 1994-12-20 Thin film transistor for lcd device

Country Status (1)

Country Link
KR (1) KR0152785B1 (en)

Also Published As

Publication number Publication date
KR0152785B1 (en) 1998-10-01

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