KR900012371A - Thin film transistor and its manufacturing method - Google Patents

Thin film transistor and its manufacturing method Download PDF

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Publication number
KR900012371A
KR900012371A KR1019890001065A KR890001065A KR900012371A KR 900012371 A KR900012371 A KR 900012371A KR 1019890001065 A KR1019890001065 A KR 1019890001065A KR 890001065 A KR890001065 A KR 890001065A KR 900012371 A KR900012371 A KR 900012371A
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KR
South Korea
Prior art keywords
layer
gate
thin film
film transistor
drain
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Application number
KR1019890001065A
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Korean (ko)
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KR970009275B1 (en
Inventor
이강원
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최근선
주식회사 금성사
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Priority to KR1019890001065A priority Critical patent/KR970009275B1/en
Publication of KR900012371A publication Critical patent/KR900012371A/en
Application granted granted Critical
Publication of KR970009275B1 publication Critical patent/KR970009275B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

내용 없음No content

Description

박막트랜지스터 및 그 제조방법Thin film transistor and its manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 액정디스플레이에 적용한 예를 나타낸 단면도, 제3도는 본 발명에 따른 박막트랜지스터의 단면도.2 is a cross-sectional view showing an example applied to the liquid crystal display, Figure 3 is a cross-sectional view of a thin film transistor according to the present invention.

Claims (3)

유리기판(1)과 과 이 유리기판상에 형성된 게이트(2)와 이 게이트에 적층된 절연막(3), (4), (5)과 이 절연막에 형성된 소오스(6) 및 드레인(7)과, 상기 드레인(7)측에 형성된 투명전도막(8)을 포함하는 박막트랜지스터에 있어서, 상기 게이트(2)는 게이트 및 이를 둘러싼 Ta2O5(2´)막으로 형성되어, 상기 절연적층(4)상에는 보호막(3´)을 형성한 구조를 갖도록 형성된 것을 특징으로 하는 박막트랜지스터.A glass substrate (1), a gate (2) formed on the glass substrate, insulating films (3), (4), (5) stacked on the gate, a source (6) and a drain (7) formed on the insulating film, In the thin film transistor including the transparent conductive film 8 formed on the drain 7 side, the gate 2 is formed of a gate and a Ta 2 O 5 (2 ′) film surrounding it, thereby forming the insulating layer 4 A thin film transistor, characterized in that it is formed to have a structure formed on the protective film (3 '). 박막트랜지스터 제조방법에 있어서, 유리기판(1)상에 형성된 Ta로 형성되는 게이트(2)상에 암모늄 타트레이트 수용액에서 부터 Ta의 양극산화된 Ta2O5(2´)를 형성하는 단계와, 그 위에 적층으로서 a-Si:H(3)Si:H (4), a-SiN:H(3´)를 증착하고 그 상층을 보호막을 형성하도록 엣칭하는 단계와, 그 위에 n´a-Si:H(5)층을 형성하고 연이어 알루미늄(Al)층을 형성하여 소오스(6) 및 드레인(7)을 형성하는 단계와, 엣칭으로 소오스(6)와 드레인(7)간 n´a-SiH (5)층을 제거하고 그외의 부분 또한 n´a-SiH(T)층과 a-Si:H(4)를 제거하고 그 위에 증착 및 엣칭방법으로 투명전도막(8)을 형성하는 단계를 포함하는 박막트랜지스터 제조방법.A thin film transistor manufacturing method comprising: forming anodized Ta 2 O 5 (2 ′) of Ta from an aqueous solution of ammonium tartrate on a gate (2) formed of Ta formed on a glass substrate (1), Depositing a-Si: H (3) Si: H (4), a-SiN: H (3 ′) as a laminate thereon, and etching the upper layer to form a protective film thereon, and n′a-Si thereon Forming an H (5) layer followed by an aluminum (Al) layer to form a source (6) and a drain (7), and n´a-SiH between the source (6) and the drain (7) by etching (5) removing the layer and removing the n'a-SiH (T) layer and the a-Si: H (4) layer, and forming a transparent conductive film 8 thereon by vapor deposition and etching. Thin film transistor manufacturing method comprising a. 제2항에 있어서, 상기 게이트의 Ta2O5(2´)층의 두께는 0.15㎛ 이상인 것을 특징으로 하는 박막트랜지스터 제조방법.The method of claim 2, wherein the thickness of the Ta 2 O 5 (2 ′) layer of the gate is 0.15 μm or more. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890001065A 1989-01-31 1989-01-31 Thin film transistor & manufacturing method KR970009275B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890001065A KR970009275B1 (en) 1989-01-31 1989-01-31 Thin film transistor & manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890001065A KR970009275B1 (en) 1989-01-31 1989-01-31 Thin film transistor & manufacturing method

Publications (2)

Publication Number Publication Date
KR900012371A true KR900012371A (en) 1990-08-04
KR970009275B1 KR970009275B1 (en) 1997-06-09

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890001065A KR970009275B1 (en) 1989-01-31 1989-01-31 Thin film transistor & manufacturing method

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Publication number Publication date
KR970009275B1 (en) 1997-06-09

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