KR960026769A - Flash memory device and manufacturing method thereof - Google Patents

Flash memory device and manufacturing method thereof Download PDF

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Publication number
KR960026769A
KR960026769A KR1019940033004A KR19940033004A KR960026769A KR 960026769 A KR960026769 A KR 960026769A KR 1019940033004 A KR1019940033004 A KR 1019940033004A KR 19940033004 A KR19940033004 A KR 19940033004A KR 960026769 A KR960026769 A KR 960026769A
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KR
South Korea
Prior art keywords
flash memory
memory device
insulating layer
drain
source
Prior art date
Application number
KR1019940033004A
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Korean (ko)
Inventor
박성빈
신용욱
최종운
이신국
백동원
김세정
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940033004A priority Critical patent/KR960026769A/en
Publication of KR960026769A publication Critical patent/KR960026769A/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

본 발명은 플래쉬 메모리 소자에 있어서, 반도체 기판 상에 형성된 소스(14) 및 드레인(13)과 소정 부위 중첩되는 플로팅 게이트(12)와, 상기 소스 및 드레인과 플로팅 게이트가 중첩되는 부위 각각에 적어도 하나의 터널 홀(15)을 구비하는 것을 특징으로 하여, 쓰기 및 지우기 동작이 각각 다른 터널 홀을 통해 수행될 수 있어, 절연층의 특성약화를 최소화할 수 있는, 즉 쓰기 특성과 지우기 특성을 향상시켜 주고, 절연막의 신뢰성을 향상시켜 줄 수 있어 소자의 성능을 향상시키는 특유의 효과가 있는 플래쉬 메모리 소자에 관한 것이다.In the flash memory device, at least one floating gate 12 overlapping a predetermined region with a source 14 and a drain 13 formed on a semiconductor substrate, and at least one region overlapping the source, drain, and floating gate, is formed. Characterized in that the tunnel hole 15 of the write and erase operations can be performed through the different tunnel holes, respectively, it is possible to minimize the weakening of the characteristics of the insulating layer, that is to improve the write characteristics and erase characteristics The present invention relates to a flash memory device having a specific effect of improving the reliability of an insulating film and improving the performance of the device.

Description

플래쉬 메모리 소자 및 그 제조방법Flash memory device and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 플래쉬 메모리 소자의 단면도.2 is a cross-sectional view of a flash memory device according to the present invention.

Claims (3)

플래쉬 메모리 소자에 있어서, 반도체 기판 상에 형성된 소스 및 드레인과 소정 부위 중첩되는 플로팅 게이트와, 상기 소스 및 드레인과 플로팅 게이트가 중첩되는 부위 각각에 적어도 하나의 터널 홀을 구비하는 것을 특징으로 하는 플래쉬메모리소자.A flash memory device comprising: a floating gate overlapping a predetermined portion with a source and a drain formed on a semiconductor substrate, and at least one tunnel hole in each of the overlapping portions of the source and drain with the floating gate; device. 소스 및 드레인과 플로팅 게이트가 중첩되는 부위 각각에 적어도 하나의 터널 홀을 구비하는 것을 특징으로 하는 플래쉬 메모리 소자의 제조방법에 있어서, 반도체 기판에 소스 및 드레인을 형성한 후, 전체구조 상부에 제1절연층, 터널 홀을 형성하기 위한 마스크 패턴을 형성하는 제1단계; 상기 마스크 패턴을 이용하여 상기 제1절연층을 제거한 후, 마스크 패턴을 제거하는 제2단계; 전체구조 상부에 제2절연층을 형성하는 제3단계를 포함하는 것을 특징으로 하는 플래쉬 메모리 소자의 제조방법.A method of manufacturing a flash memory device, the method comprising: forming at least one tunnel hole in each of an overlapping portion of a source, a drain, and a floating gate; A first step of forming a mask pattern for forming an insulating layer and a tunnel hole; A second step of removing the mask pattern after removing the first insulating layer using the mask pattern; And forming a second insulating layer over the entire structure. 제2항에 있어서, 상기 제2절연층은, 상기 제1절연층의 두께보다 작은 두께를 갖도록 형성하는 것을 특징으로 하는 플레쉬 메모리 소자의 제조방법.The method of claim 2, wherein the second insulating layer is formed to have a thickness smaller than that of the first insulating layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940033004A 1994-12-06 1994-12-06 Flash memory device and manufacturing method thereof KR960026769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940033004A KR960026769A (en) 1994-12-06 1994-12-06 Flash memory device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940033004A KR960026769A (en) 1994-12-06 1994-12-06 Flash memory device and manufacturing method thereof

Publications (1)

Publication Number Publication Date
KR960026769A true KR960026769A (en) 1996-07-22

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940033004A KR960026769A (en) 1994-12-06 1994-12-06 Flash memory device and manufacturing method thereof

Country Status (1)

Country Link
KR (1) KR960026769A (en)

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