KR960026455A - Transistor Manufacturing Method - Google Patents

Transistor Manufacturing Method Download PDF

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Publication number
KR960026455A
KR960026455A KR1019940036943A KR19940036943A KR960026455A KR 960026455 A KR960026455 A KR 960026455A KR 1019940036943 A KR1019940036943 A KR 1019940036943A KR 19940036943 A KR19940036943 A KR 19940036943A KR 960026455 A KR960026455 A KR 960026455A
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KR
South Korea
Prior art keywords
layer
transistor manufacturing
spacers
gate electrode
selective oxidation
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Application number
KR1019940036943A
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Korean (ko)
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KR100278282B1 (en
Inventor
강지성
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019940036943A priority Critical patent/KR100278282B1/en
Publication of KR960026455A publication Critical patent/KR960026455A/en
Application granted granted Critical
Publication of KR100278282B1 publication Critical patent/KR100278282B1/en

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 절연층(2), 게이트 전극(3)을 포함하는 소정 층이나 패턴이 형성된 반도체 기판(1) 전체구조 표면에 선택적 산화가 가능한 층(5)을 형성하는 제1단계 ; 상기 선택적 산화가 가능한 층(5)의 소정 부위를 제거하는 제2단계 ; 및 산화공정을 실시하는 제3단계를 포함하는 것을 특징으로 하여, 고속동작에 유리하여, 고부가가치의 제품을 생산할 수 있는 효과가 있는 트랜지스터 제조방법에 관한 것이다.The present invention provides a first step of forming a layer (5) capable of selective oxidation on the surface of an entire structure of a semiconductor substrate (1) having a predetermined layer or pattern including an insulating layer (2) and a gate electrode (3); A second step of removing a predetermined portion of the selective oxidation layer (5); And a third step of performing an oxidation process, which is advantageous for high-speed operation and has an effect of producing a high value-added product.

Description

트랜지스터 제조방법Transistor Manufacturing Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1D도는 본 발명에 따른 트랜지스터 제조과정을 도시한 공정 단면도.1D is a process cross-sectional view showing a transistor manufacturing process according to the present invention.

Claims (5)

절연층, 게이트 전극을 포함하는 소정 층이나 패턴이 형성된 반도체 기판 전체구조 표면에 선택적 산화가 가능한 층을 형성하는 제1단계 ; 상기 선택적 산화가 가능한 층의 소정 부위를 제거하는 제2단계 ; 및 산화공정을 실시하는 제3단계를 포함하는 것을 특징으로 하는 트랜지스터 제조방법.Forming a layer capable of selectively oxidizing a predetermined layer or pattern including an insulating layer and a gate electrode on the entire surface of the semiconductor substrate on which the pattern is formed; Removing a predetermined portion of the selective oxidizable layer; And a third step of performing an oxidation process. 제1항에 있어서, 상기 제3단계 수행후, 노출된 상기 절연층의 일부두께를 제거한 후, 소스/드레인을 형성하기 위한 이온주입을 실시하는 제4단계를 더 포함하는 것을 특징으로 하는 트랜지스터 제조방법.The transistor manufacturing method of claim 1, further comprising a fourth step of performing ion implantation to form a source / drain after removing a portion of the exposed insulating layer after performing the third step. Way. 제1항에 있어서, 상기 제2단계는, 상기 선택적 산화가 가능한 층 측벽에 스페이서를 형성한 다음, 상기 스페이서를 이용해서 스페이서 하부 및 게이트 전극 상부를 제외한 선택적 산화가 가능한 층을 제거하는 것을 특징으로 하는 트랜지스터 제조방법.The method of claim 1, wherein the forming of the spacers on the sidewalls of the selective oxidation layer is performed, and then, using the spacers, a layer capable of selectively oxidizing except for the spacers and the top of the gate electrode is removed. Transistor manufacturing method. 제3항에 있어서, 상기 스페이서는 상기 제3단계를 수행하기 전에 제거하는 것을 특징으로 하는 트랜지스터 제조방법.The method of claim 3, wherein the spacer is removed before performing the third step. 제1항에 있어서, 상기 선택적 산화가 가능한 층은, SiN층인 것을 특징으로 하는 트랜지스터 제조방법.The method of claim 1, wherein the selective oxidation layer is a SiN layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940036943A 1994-12-26 1994-12-26 Transistor Manufacturing Method KR100278282B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940036943A KR100278282B1 (en) 1994-12-26 1994-12-26 Transistor Manufacturing Method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940036943A KR100278282B1 (en) 1994-12-26 1994-12-26 Transistor Manufacturing Method

Publications (2)

Publication Number Publication Date
KR960026455A true KR960026455A (en) 1996-07-22
KR100278282B1 KR100278282B1 (en) 2001-03-02

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940036943A KR100278282B1 (en) 1994-12-26 1994-12-26 Transistor Manufacturing Method

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KR (1) KR100278282B1 (en)

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Publication number Publication date
KR100278282B1 (en) 2001-03-02

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