KR960026295U - 칩부품 실장구조 - Google Patents

칩부품 실장구조

Info

Publication number
KR960026295U
KR960026295U KR2019940033894U KR19940033894U KR960026295U KR 960026295 U KR960026295 U KR 960026295U KR 2019940033894 U KR2019940033894 U KR 2019940033894U KR 19940033894 U KR19940033894 U KR 19940033894U KR 960026295 U KR960026295 U KR 960026295U
Authority
KR
South Korea
Prior art keywords
mounting structure
component mounting
chip component
chip
mounting
Prior art date
Application number
KR2019940033894U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR2019940033894U priority Critical patent/KR960026295U/ko
Publication of KR960026295U publication Critical patent/KR960026295U/ko

Links

KR2019940033894U 1994-12-13 1994-12-13 칩부품 실장구조 KR960026295U (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019940033894U KR960026295U (ko) 1994-12-13 1994-12-13 칩부품 실장구조

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019940033894U KR960026295U (ko) 1994-12-13 1994-12-13 칩부품 실장구조

Publications (1)

Publication Number Publication Date
KR960026295U true KR960026295U (ko) 1996-07-22

Family

ID=60852997

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019940033894U KR960026295U (ko) 1994-12-13 1994-12-13 칩부품 실장구조

Country Status (1)

Country Link
KR (1) KR960026295U (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11257719B2 (en) 2018-06-27 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for improving interlayer dielectric layer topography

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11257719B2 (en) 2018-06-27 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for improving interlayer dielectric layer topography

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Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination