KR960026228A - Contact formation method of semiconductor device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a contact of a semiconductor device, wherein one side of a bit line formed on an upper surface of a semiconductor substrate is etched to a step shape, and a contact hole is formed by a wet method using a contact mask and an etching method using plasma. Then, by forming a contact material layer in a later process, the step coverage ratio is increased to enable high integration of the semiconductor device, and the durability of the contact material layer is increased, thereby improving the reliability of the semiconductor device.

Description

Method for forming a contact of a semiconductor device.

Since this is an open matter, no full text was included.

1A to 1D are sectional views showing a contact forming process of a semiconductor device according to an embodiment of the present invention.

Claims (3)

A method for forming a highly contacted semiconductor device, comprising: forming a material layer on an upper surface of a semiconductor substrate, forming a bit line on an upper portion of the material layer, and fixing one side of the bit line by using a separate mask. Forming a stepped layer by etching the thickness; forming a lower insulating layer on the entire surface; etching the lower insulating layer by a wet method using a contact mask; and using the contact mask. A method for forming a contact in a semiconductor device comprising the step of etching the layer. The method of claim 1, wherein the material layer etching process is performed by a dry etching process using plasma. The method of claim 1, wherein the material layer etching process is performed by a dry etching process using plasma. ※ Note: The disclosure is based on the initial application.