KR960025783A - Flash memory device - Google Patents

Flash memory device Download PDF

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Publication number
KR960025783A
KR960025783A KR1019940037312A KR19940037312A KR960025783A KR 960025783 A KR960025783 A KR 960025783A KR 1019940037312 A KR1019940037312 A KR 1019940037312A KR 19940037312 A KR19940037312 A KR 19940037312A KR 960025783 A KR960025783 A KR 960025783A
Authority
KR
South Korea
Prior art keywords
memory device
flash memory
word line
memory cell
cell group
Prior art date
Application number
KR1019940037312A
Other languages
Korean (ko)
Inventor
심현수
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940037312A priority Critical patent/KR960025783A/en
Publication of KR960025783A publication Critical patent/KR960025783A/en

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Abstract

본 발명은 플래쉬 메모리 장치에 관한 것으로서, 워드라인 및 비트라인간에 접속된 스택 메모리셀군에서 선택된 워드라인의 메모리셀만 동작이 가능하도록 하여 소거모드시간을 단축시키고, 독출시행시 오버이레이즈 현상을 방지하도록 한 플래쉬 메모리 장치에 관한 것이다.The present invention relates to a flash memory device, in which a memory cell of a selected word line in a stack memory cell group connected between a word line and a bit line can be operated to shorten an erase mode time and prevent an over-raise phenomenon during a read operation. One flash memory device.

Description

플래쉬 메모리 장치Flash memory device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

첨부된 도면은 본 발명에 따른 플래쉬 메모리 장치의 회로도.The accompanying drawings are circuit diagrams of a flash memory device according to the present invention.

Claims (1)

워드라인 및 비트라인 간에 다수의 스택 메모리셀들로 접속구성되며 각기 워드라인에 각각의 소오스 단자가 서로 공통으로 접속된 메모리셀군과, 상기 메모리셀군 및 접지단자간에 잡속되며 상기 워드라인을 입력으로 하는 NMOS트랜지스터로 구성된 것을 특징으로 하는 플래쉬 메모리 장치.A plurality of stacked memory cells are connected between a word line and a bit line, and each source terminal is connected to each word line in common with each other, and the memory cell group and the ground terminal are connected to each other. A flash memory device comprising an NMOS transistor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940037312A 1994-12-27 1994-12-27 Flash memory device KR960025783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940037312A KR960025783A (en) 1994-12-27 1994-12-27 Flash memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940037312A KR960025783A (en) 1994-12-27 1994-12-27 Flash memory device

Publications (1)

Publication Number Publication Date
KR960025783A true KR960025783A (en) 1996-07-20

Family

ID=66769679

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940037312A KR960025783A (en) 1994-12-27 1994-12-27 Flash memory device

Country Status (1)

Country Link
KR (1) KR960025783A (en)

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