KR960024654A - How to form a photo mask pattern - Google Patents
How to form a photo mask pattern Download PDFInfo
- Publication number
- KR960024654A KR960024654A KR1019940040763A KR19940040763A KR960024654A KR 960024654 A KR960024654 A KR 960024654A KR 1019940040763 A KR1019940040763 A KR 1019940040763A KR 19940040763 A KR19940040763 A KR 19940040763A KR 960024654 A KR960024654 A KR 960024654A
- Authority
- KR
- South Korea
- Prior art keywords
- polyamide
- photomask pattern
- forming
- contact window
- etching
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
1. 청구범위에 기재된 발명이 속하는 기술분야1. TECHNICAL FIELD OF THE INVENTION
웨트에치(Wet Etch)없이 폴리아미드로 평탄화하여 포토마스크 패턴을 형성하고, 접촉창 부위의 폴리아미드를 딥 아웃(dip-out)하여 접촉창 식각을 실시하는 포토마스크 패턴 형성 방법에 관한 것이다.The present invention relates to a method of forming a photomask pattern by flattening with polyamide without wet etching to form a photomask pattern, and performing contact window etching by dipping out the polyamide of the contact window portion.
2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention
접촉창에 웨트에치를 실시하는 단계에서 포토마스크 패턴 형성후 식각 용액에 딥(Dip)하기 때문에 공정상의 파티클 발생이 많으며, 포토 레지스터 패턴에 비대칭 등방성 식각이 이루어지는 문제점이 있었음.In the step of performing wet etch on the contact window, since the dip is etched into the etching solution after forming the photomask pattern, there are many particles in the process, and there is a problem that the asymmetric isotropic etching is performed on the photoresist pattern.
3. 발명의 해결방법의 요지3. Summary of Solution to Invention
반도체 소자의 제조 공정중 포토마스크 패턴 형성방법에 있어서, 비감광성 폴리아미드로서 코팅하는 단계와, 코팅된 폴리아미드를 현상용액에 디핑하는 단계를 포함하여서 됨.A method of forming a photomask pattern in a process of manufacturing a semiconductor device, the method comprising coating as a non-photosensitive polyamide and dipping the coated polyamide into a developing solution.
4. 발명의 중요한 용도4. Important uses of the invention
웨트에치(Wet Etch)없이 폴리아미드로 평탄화하여 포토마스크 패턴을 형성하고, 접촉창 부위의 폴리아미드를 딥 아웃(dip-out)하여 접촉창 식각을 실시하는 새로운 포토마스크 패턴 형성 방법임.It is a new photomask pattern forming method for forming a photomask pattern by flattening with polyamide without wet etch, and performing contact window etching by dipping out the polyamide of the contact window portion.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1A도는 본 발명의 절연층 중착단계를 나타내는 도면, 제1B도는 본 발명의 폴리아미드 및 포토레지스트 코팅 및 접촉창 형성 단계를 나타내는 도면, 제1C도는 본 발명의 폴리아미드를 식각하는 단계를 나타내는 도면, 제1D도는 본 발명의 에치 및 폴리아미드 스트립을 형성 하는 단계, 제1E도는 본 발명의 메탈 스퍼터링 단계를 나타내는 도면.Figure 1A is a view showing the insulating layer deposition step of the present invention, Figure 1B is a view showing the polyamide and photoresist coating and contact window forming step of the present invention, Figure 1C is a view showing a step of etching the polyamide of the present invention Figure 1D shows the steps of forming the etch and polyamide strips of the invention, and Figure 1E shows the metal sputtering steps of the invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940040763A KR960024654A (en) | 1994-12-30 | 1994-12-30 | How to form a photo mask pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940040763A KR960024654A (en) | 1994-12-30 | 1994-12-30 | How to form a photo mask pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960024654A true KR960024654A (en) | 1996-07-20 |
Family
ID=66648221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940040763A KR960024654A (en) | 1994-12-30 | 1994-12-30 | How to form a photo mask pattern |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960024654A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100262666B1 (en) * | 1997-02-13 | 2000-09-01 | 김영환 | Semiconductor memory device for controlling sense amplifier |
-
1994
- 1994-12-30 KR KR1019940040763A patent/KR960024654A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100262666B1 (en) * | 1997-02-13 | 2000-09-01 | 김영환 | Semiconductor memory device for controlling sense amplifier |
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