KR960024654A - How to form a photo mask pattern - Google Patents

How to form a photo mask pattern Download PDF

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Publication number
KR960024654A
KR960024654A KR1019940040763A KR19940040763A KR960024654A KR 960024654 A KR960024654 A KR 960024654A KR 1019940040763 A KR1019940040763 A KR 1019940040763A KR 19940040763 A KR19940040763 A KR 19940040763A KR 960024654 A KR960024654 A KR 960024654A
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KR
South Korea
Prior art keywords
polyamide
photomask pattern
forming
contact window
etching
Prior art date
Application number
KR1019940040763A
Other languages
Korean (ko)
Inventor
황준
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940040763A priority Critical patent/KR960024654A/en
Publication of KR960024654A publication Critical patent/KR960024654A/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

1. 청구범위에 기재된 발명이 속하는 기술분야1. TECHNICAL FIELD OF THE INVENTION

웨트에치(Wet Etch)없이 폴리아미드로 평탄화하여 포토마스크 패턴을 형성하고, 접촉창 부위의 폴리아미드를 딥 아웃(dip-out)하여 접촉창 식각을 실시하는 포토마스크 패턴 형성 방법에 관한 것이다.The present invention relates to a method of forming a photomask pattern by flattening with polyamide without wet etching to form a photomask pattern, and performing contact window etching by dipping out the polyamide of the contact window portion.

2. 발명이 해결하려고 하는 기술적 과제2. The technical problem to be solved by the invention

접촉창에 웨트에치를 실시하는 단계에서 포토마스크 패턴 형성후 식각 용액에 딥(Dip)하기 때문에 공정상의 파티클 발생이 많으며, 포토 레지스터 패턴에 비대칭 등방성 식각이 이루어지는 문제점이 있었음.In the step of performing wet etch on the contact window, since the dip is etched into the etching solution after forming the photomask pattern, there are many particles in the process, and there is a problem that the asymmetric isotropic etching is performed on the photoresist pattern.

3. 발명의 해결방법의 요지3. Summary of Solution to Invention

반도체 소자의 제조 공정중 포토마스크 패턴 형성방법에 있어서, 비감광성 폴리아미드로서 코팅하는 단계와, 코팅된 폴리아미드를 현상용액에 디핑하는 단계를 포함하여서 됨.A method of forming a photomask pattern in a process of manufacturing a semiconductor device, the method comprising coating as a non-photosensitive polyamide and dipping the coated polyamide into a developing solution.

4. 발명의 중요한 용도4. Important uses of the invention

웨트에치(Wet Etch)없이 폴리아미드로 평탄화하여 포토마스크 패턴을 형성하고, 접촉창 부위의 폴리아미드를 딥 아웃(dip-out)하여 접촉창 식각을 실시하는 새로운 포토마스크 패턴 형성 방법임.It is a new photomask pattern forming method for forming a photomask pattern by flattening with polyamide without wet etch, and performing contact window etching by dipping out the polyamide of the contact window portion.

Description

포토 마스크 패턴 형성 방법How to form a photo mask pattern

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도는 본 발명의 절연층 중착단계를 나타내는 도면, 제1B도는 본 발명의 폴리아미드 및 포토레지스트 코팅 및 접촉창 형성 단계를 나타내는 도면, 제1C도는 본 발명의 폴리아미드를 식각하는 단계를 나타내는 도면, 제1D도는 본 발명의 에치 및 폴리아미드 스트립을 형성 하는 단계, 제1E도는 본 발명의 메탈 스퍼터링 단계를 나타내는 도면.Figure 1A is a view showing the insulating layer deposition step of the present invention, Figure 1B is a view showing the polyamide and photoresist coating and contact window forming step of the present invention, Figure 1C is a view showing a step of etching the polyamide of the present invention Figure 1D shows the steps of forming the etch and polyamide strips of the invention, and Figure 1E shows the metal sputtering steps of the invention.

Claims (1)

반도체 소자의 제조 공정 중 포토마스크 패턴 형성방법에 있어서, 비감광성 폴리아미드로서 코팅하는 단계와, 코팅된 폴리아미드를 현상용액에 디핑하는 단계를 포함하는 것을 특징으로 하는 포토마스크 패턴 형성 방법.A method of forming a photomask pattern in a process of manufacturing a semiconductor device, the method comprising: coating as a non-photosensitive polyamide and dipping the coated polyamide into a developing solution. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940040763A 1994-12-30 1994-12-30 How to form a photo mask pattern KR960024654A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940040763A KR960024654A (en) 1994-12-30 1994-12-30 How to form a photo mask pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940040763A KR960024654A (en) 1994-12-30 1994-12-30 How to form a photo mask pattern

Publications (1)

Publication Number Publication Date
KR960024654A true KR960024654A (en) 1996-07-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940040763A KR960024654A (en) 1994-12-30 1994-12-30 How to form a photo mask pattern

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Country Link
KR (1) KR960024654A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100262666B1 (en) * 1997-02-13 2000-09-01 김영환 Semiconductor memory device for controlling sense amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100262666B1 (en) * 1997-02-13 2000-09-01 김영환 Semiconductor memory device for controlling sense amplifier

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