KR960023267A - Manganese-Zinc Ferrite Single Crystal Growth Device - Google Patents
Manganese-Zinc Ferrite Single Crystal Growth Device Download PDFInfo
- Publication number
- KR960023267A KR960023267A KR1019940040117A KR19940040117A KR960023267A KR 960023267 A KR960023267 A KR 960023267A KR 1019940040117 A KR1019940040117 A KR 1019940040117A KR 19940040117 A KR19940040117 A KR 19940040117A KR 960023267 A KR960023267 A KR 960023267A
- Authority
- KR
- South Korea
- Prior art keywords
- single crystal
- manganese
- ferrite
- raw material
- ferrite single
- Prior art date
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- Crystals, And After-Treatments Of Crystals (AREA)
- Soft Magnetic Materials (AREA)
Abstract
본 발명은 도가니에 망간-아연 페라이트용액을 장입하여 발열부가 설치된 성장로 내의 노심관 사이를 수직 또는 강하시킨 다음 일정 온도로 서냉하여 페라이트 단결정을 성장시키는 연속공급식 브리지맨방식의 페라이트 단결정 성장장치에 있어서, 페라이트 단결정의 조성을 일정하게 성장시키기 위한 추가원료의 공급수단으로 일정 간격으로 홈이 형성된 회전체와 과립형태의 추가원료가 저장되는 원료저장용기와 투입되는 과립원료의 주도가니로의 전달통로인 깔대기로 구성되는 과립투입기를 주도가니 위에 설치하여, 과립투입기를 통해 과립상태의 추가원료를 일정한 양으로 성장되는 주도가니의 초기원료에 연속적으로 투입되도록 함으로써, 보조도가니의 사용에 따른 백금 혼입의 불량을 줄이고 단결정 성장의 제조원가를 절감시키며 성장작업의 안정성으로 보다 대형의 단결정 제조를 가능하게 한 망간-아연 페라이트 단결정 성장장치에 관한 것이다.In the present invention, a manganese-zinc ferrite solution is charged to a crucible, and the ferrite single crystal growth apparatus of a continuous feeding bridgeman method for growing ferrite single crystals by vertically or lowering the core tube in a growth furnace in which a heating part is installed and then slowly cooling to a predetermined temperature. In the present invention, a feed passage of a raw material storage container in which grooves are formed at regular intervals and a raw material storage container for storing additional materials in a granular form and a granule material introduced into the main crucible as a means for supplying additional raw materials for constantly growing the composition of the ferrite single crystal The granulation injector composed of the funnel is installed on the main crucible, and the additional raw material in the granular state is continuously introduced into the initial raw material of the growing crucible by a certain amount through the granulation injector. To reduce the manufacturing cost of single crystal growth It relates to a manganese-zinc ferrite single crystal growth apparatus that enables the production of larger single crystals with the stability of the up.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명의 과립투입기가 설치된 페라이트단결정 성장장치의 개략도, 제3도는 본 발명의 과립투입기의 구조를 도시한 상세도.Figure 2 is a schematic diagram of a ferrite single crystal growth apparatus is installed granulator injector of the present invention, Figure 3 is a detailed view showing the structure of the granulator injector of the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940040117A KR960023267A (en) | 1994-12-30 | 1994-12-30 | Manganese-Zinc Ferrite Single Crystal Growth Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940040117A KR960023267A (en) | 1994-12-30 | 1994-12-30 | Manganese-Zinc Ferrite Single Crystal Growth Device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960023267A true KR960023267A (en) | 1996-07-18 |
Family
ID=66647748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940040117A KR960023267A (en) | 1994-12-30 | 1994-12-30 | Manganese-Zinc Ferrite Single Crystal Growth Device |
Country Status (1)
Country | Link |
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KR (1) | KR960023267A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101047209B1 (en) * | 2010-06-29 | 2011-07-06 | 임채구 | High temperature melting using microwave |
KR20190045175A (en) * | 2016-09-12 | 2019-05-02 | 제이에프이미네라르 가부시키가이샤 | Process for producing single crystals containing PbTiO3 |
-
1994
- 1994-12-30 KR KR1019940040117A patent/KR960023267A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101047209B1 (en) * | 2010-06-29 | 2011-07-06 | 임채구 | High temperature melting using microwave |
KR20190045175A (en) * | 2016-09-12 | 2019-05-02 | 제이에프이미네라르 가부시키가이샤 | Process for producing single crystals containing PbTiO3 |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |