KR960019826A

KR960019826A - Magnetoresistive sensor and manufacturing method thereof

Info

Publication number: KR960019826A
Application number: KR1019940029501A
Authority: KR
Inventors: 김재욱
Original assignee: 정몽원; 만도기계 주식회사
Priority date: 1994-11-11
Filing date: 1994-11-11
Publication date: 1996-06-17

Abstract

본 발명은 자기저항센서 및 그의 제조방법에 관한 것으로서, 자기저항층을 강자성체와 비자성체로 이루어진 자성층과 비자성층이 20∼40회 정도 교번하여 형성된 (자성층/비자성층)_20∼40의 구조를 갖고 자성층들이 자기모멘트를 이웃하는 것들끼리 수평으로 서로 반대방향이 되도록 하여 각 층마다 서로 다른 보자력을 갖도록 한다. 따라서, 다층의 자성층이 각층 마다 서로 다른 보자력을 가지므로 자기저항효과가 크게되어 민감도가 향상되며, 또한, 낮은 자계에서도 큰 출력을 얻을 수 있고 높은 자계에서 포화되어 직선성 및 회전 검출특성이 향상된다.The present invention has the structure of the magnetoresistive sensor and relates to a production method thereof, the magneto-resistive layer to the magnetic layer and the non-magnetic layer made of a ferromagnetic material and a non-magnetic material formed by alternating about 20 to 40 times (magnetic / non-magnetic layer) _{20 to 40} The magnetic layers have mutually different coercive forces so that their neighboring magnetic moments are horizontally opposite to each other. Therefore, since the multilayer magnetic layers have different coercive forces for each layer, the magneto-resistive effect is increased and the sensitivity is improved. In addition, a large output can be obtained even in a low magnetic field and saturation is obtained at a high magnetic field, .

Description

Magnetoresistive sensor and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도는 본 발명에 따른 자기저항센서의 단면도.1 is a sectional view of a magnetoresistive sensor according to the present invention;

Claims

A buffer layer formed on the substrate so as to prevent surface defects of the substrate and defects generated during the process from being transmitted to the respective layers to be formed on the substrate; A magnetoresistive layer in which a magnetic layer made of a multilayer ferromagnetic material and a nonmagnetic layer made of a nonmagnetic material are alternately formed on an electrode, an electrode formed on the magnetoresistive layer, and an electrode formed on the electrode, And a cap layer formed to prevent the cap layer from being damaged.

The magnetoresistive sensor according to claim 1, wherein the substrate is made of a silicon wafer, alumina or glass.

The magnetoresistive sensor according to claim 1, wherein the magnetoresistive layer is formed by laminating a magnetic layer and a non-magnetic layer repeatedly 20 to 40 times.

The magnetoresistive sensor according to claim 3, wherein the magnetic layer is made of Ni ₈₁ Fe ₁₉ .

The magnetoresistive sensor according to claim 4, wherein the magnetic layer has a thickness of 20 to 30 Å.

The magnetoresistive sensor according to claim 3, wherein the nonmagnetic layer is formed of any one of gold, silver and aluminum.

7. The magnetoresistive sensor according to claim 6, wherein the nonmagnetic layer is formed to a thickness of 80 to 900 angstroms.

Forming a buffer layer on an upper surface of a flat substrate; forming an electrode on the buffer layer; alternately applying a plurality of magnetic layers and a non-magnetic layer to the upper portion of the electrode to form a magnetoresistive layer; A step of forming an electrode on the magnetoresistive layer, and a step of forming a cap layer on the electrode.

The method of manufacturing a magnetoresistive sensor according to claim 8, wherein the magnetoresistive layer is formed by an electron beam vacuum deposition method.

The method of manufacturing a magnetoresistive sensor according to claim 8, wherein the heat treatment is performed at a temperature of 200 to 300 캜 for 1 hour.

※ Note: It is disclosed by the contents of the first application.