KR960036109A - Manufacturing method of multilayer thin film magnetoresistive sensor - Google Patents

Manufacturing method of multilayer thin film magnetoresistive sensor Download PDF

Info

Publication number
KR960036109A
KR960036109A KR1019950006992A KR19950006992A KR960036109A KR 960036109 A KR960036109 A KR 960036109A KR 1019950006992 A KR1019950006992 A KR 1019950006992A KR 19950006992 A KR19950006992 A KR 19950006992A KR 960036109 A KR960036109 A KR 960036109A
Authority
KR
South Korea
Prior art keywords
forming
layer
manufacturing
thin film
magnetoresistive sensor
Prior art date
Application number
KR1019950006992A
Other languages
Korean (ko)
Inventor
김재욱
Original Assignee
정몽원
만도기계 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 정몽원, 만도기계 주식회사 filed Critical 정몽원
Priority to KR1019950006992A priority Critical patent/KR960036109A/en
Publication of KR960036109A publication Critical patent/KR960036109A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Abstract

자기 저항비가 약5%이상으로서 민감도가 높고 포화 자화가 약 100 Ｏe이하이고 MR%가 약 5%이상으로 나타나고 또한 환경성이 우수하여 온도의 영향을 적게 받고 약 150℃이상에서도 작동 가능한 자기 저항 소자를 제공하기 위하여 본 발명은 규소 기판상부에 Cu조성의 버퍼층을 형성시키는 제1공정과, 상기 버퍼층 상부에 다수의 자성층 및 비자성층을 교번하여 증착시키고 열처리시켜서 자기 저항층을 형성시키는 제2공정과, 상기 자기 저항층의 상부에 전극을 형성시키는 제3공정과, 상기 전극의 상부에 캐핑층를 형성시키는 제4공정으로 이루어져 있는 다층 박막형 자기 저항 센서 제조 방법을 제공한다.The magnetoresistance ratio is about 5% or more, high sensitivity, saturation magnetization is about 100 Oe or less, MR% is about 5% or more, and it is excellent in environment, so it is less affected by temperature and can operate over 150 ℃. The present invention provides a first step of forming a buffer layer of Cu composition on the silicon substrate, a second step of forming a magnetoresistive layer by alternately depositing and heat-treating a plurality of magnetic layers and nonmagnetic layers on the buffer layer, Provided is a third step of forming an electrode on the magnetoresistive layer and a fourth step of forming a capping layer on the electrode.

Description

다층 박막형 자기 저항 센서 제조 방법Manufacturing method of multilayer thin film magnetoresistive sensor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명에 따른 자기 저항 센서의 자기 저항층의 자성층에 각각 형성된 자기 모멘트의 방향을 개략적으로 도시한 구성도1 is a configuration diagram schematically showing the direction of the magnetic moment formed in the magnetic layer of the magnetoresistive layer of the magnetoresistive sensor according to the present invention.

Claims (1)

규소 기판상부에 Cu조성의 버퍼층을 형성시키는 제1공정과, 상기 버퍼층 상부에 다수의 자성층 및 비자성층을 교번하여 증착시키고 열처리시켜서 자기 저항층을 형성시키는 제2공정과 상기 자기 저항층의 상부에 전극을 형성시키는 제3공정과 상기 전극의 상부에 캐핑층을 형성시키는 제4공정으로 이루어져 있는 것을 특징으로 하는 다층 박막형 자기 저항 센서 제조 방법.A first step of forming a Cu layer buffer layer on the silicon substrate, a second step of alternately depositing and heat treating a plurality of magnetic layers and nonmagnetic layers on the buffer layer, and forming a magnetoresistive layer on the magnetoresistive layer And a third step of forming an electrode and a fourth step of forming a capping layer on top of the electrode. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950006992A 1995-03-30 1995-03-30 Manufacturing method of multilayer thin film magnetoresistive sensor KR960036109A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950006992A KR960036109A (en) 1995-03-30 1995-03-30 Manufacturing method of multilayer thin film magnetoresistive sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950006992A KR960036109A (en) 1995-03-30 1995-03-30 Manufacturing method of multilayer thin film magnetoresistive sensor

Publications (1)

Publication Number Publication Date
KR960036109A true KR960036109A (en) 1996-10-28

Family

ID=66552779

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950006992A KR960036109A (en) 1995-03-30 1995-03-30 Manufacturing method of multilayer thin film magnetoresistive sensor

Country Status (1)

Country Link
KR (1) KR960036109A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200094981A (en) 2019-01-31 2020-08-10 광주과학기술원 Magnetoresistive Sensor and the Manufacturing Method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200094981A (en) 2019-01-31 2020-08-10 광주과학기술원 Magnetoresistive Sensor and the Manufacturing Method thereof

Similar Documents

Publication Publication Date Title
KR950015410A (en) Magnetoresistive Sensor and Manufacturing Method of Magnetoresistive Sensor
KR960011854A (en) Magnetoresistive effect thin film and its manufacturing method
EP1494295A4 (en) Magnetoresistance effect element and magnetic memory device
CA1196093A (en) Integrated magnetostrictive-piezoresistive magnetic recording playback head
EP0797187A3 (en) Spin valve magnetoresistive transducers having permanent magnets
KR910015097A (en) Ferromagnetic film and its manufacturing method and magnetic head using the same
KR970018763A (en) Magnetoresistive element and sensor
US5551586A (en) Method for manufacturing an electromagnetic conversion device and a displacement detector which uses an electromagnetic conversion device
KR960002146A (en) Magnetoresistance type thin film magnetic head
KR970002892A (en) Magnetoresistive element and manufacturing method thereof
JP2000180207A (en) Magnetism sensor
KR960036109A (en) Manufacturing method of multilayer thin film magnetoresistive sensor
KR980004396A (en) Manufacturing method of magnetoresistive sensor for read / write head
KR970029911A (en) Granular magnetoresistive element and manufacturing method thereof
KR960019826A (en) Magnetoresistive sensor and manufacturing method thereof
KR950007177A (en) High sensitivity magnetoresistive sensor manufacturing method
JP2001274477A (en) Magnetoresistive element
KR0183559B1 (en) Spin-valve type magnetoresistance unit
JP2003168834A (en) Magnetoresistive effect element and its producing system, and magnetic memory
KR960018545A (en) Torque sensor
JPH05135569A (en) Magnetic thin-film memory element, magnetic thin-film memory formed by using this element and method for recording in magnetic thin-film memory
KR960008700A (en) Method of manufacturing thin film magnetic head
KR100234173B1 (en) Magnetoresistive device of thin film magnetic head
JPH02270106A (en) Thin-film magnetic head
JPS6396974A (en) Ferromagnetic magnetoresistance element

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application