KR960019480A - Wafer Pattern Forming Method - Google Patents
Wafer Pattern Forming Method Download PDFInfo
- Publication number
- KR960019480A KR960019480A KR1019940029191A KR19940029191A KR960019480A KR 960019480 A KR960019480 A KR 960019480A KR 1019940029191 A KR1019940029191 A KR 1019940029191A KR 19940029191 A KR19940029191 A KR 19940029191A KR 960019480 A KR960019480 A KR 960019480A
- Authority
- KR
- South Korea
- Prior art keywords
- reticle
- light
- pattern
- forming method
- wafer
- Prior art date
Links
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
광원으로 부터의 광을 레티클부에 조사하고 광의 일부분이 레티클부를 통해 투과되는 단계와, 패턴을 노출시키도록 렌즈시스템을 사용하여 웨이퍼 상의 감광층에 레티클부를 통해 투과된 광을 영상화하는 단계 및 노출된 패턴을 현상하는 단계로 이루어진 웨이퍼의 패턴형성방법으로서, 상기 레티클부는 2 이상의 레티클로 구성되고, 상기 각각의 레티클과 레티클 사이에는 렌즈가 삽입되어, 상기 광원으로 부터의 광을 상기 각각의 레티클과 렌즈를 통과시킴으로써 레티클의 패턴에지에서 산란된 빛을 제거토록 하는 것을 특징으로 하는 웨이퍼의 패턴형성방법.Irradiating light from the light source to the reticle and transmitting a portion of the light through the reticle, imaging the light transmitted through the reticle to the photosensitive layer on the wafer using a lens system to expose the pattern and A pattern forming method of a wafer comprising a step of developing a pattern, wherein the reticle portion is composed of two or more reticles, and a lens is inserted between each of the reticles and the reticle, and the light from the light source is transferred to each of the reticle and the lens. Passing through the pattern forming method of the wafer, characterized in that to remove the scattered light from the pattern edge of the reticle.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 본 발명에 따른 웨이퍼의 패턴형성방법에 의한 레티클의 패턴에지에서 산란된 빛이 제거되는 과정을 나타내는 도면.2 is a view showing a process in which scattered light is removed from the pattern edge of the reticle by the pattern forming method of the wafer according to the present invention.
Claims (2)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940029191A KR960019480A (en) | 1994-11-08 | 1994-11-08 | Wafer Pattern Forming Method |
| US08/550,754 US5747221A (en) | 1994-11-08 | 1995-10-31 | Photolithography method and photolithography system for performing the method |
| GB9522272A GB2295031A (en) | 1994-11-08 | 1995-10-31 | Projection printing using 2 masks |
| JP07309676A JP3096841B2 (en) | 1994-11-08 | 1995-11-06 | Photolithography method and photolithography system used therefor |
| CN95118599A CN1075894C (en) | 1994-11-08 | 1995-11-08 | Photolithography method and photolithography system for performing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940029191A KR960019480A (en) | 1994-11-08 | 1994-11-08 | Wafer Pattern Forming Method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR960019480A true KR960019480A (en) | 1996-06-17 |
Family
ID=66687377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940029191A KR960019480A (en) | 1994-11-08 | 1994-11-08 | Wafer Pattern Forming Method |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR960019480A (en) |
-
1994
- 1994-11-08 KR KR1019940029191A patent/KR960019480A/en not_active Application Discontinuation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |