KR960018737A - Unit pixel of thin film transistor liquid crystal display - Google Patents

Unit pixel of thin film transistor liquid crystal display Download PDF

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Publication number
KR960018737A
KR960018737A KR1019940031967A KR19940031967A KR960018737A KR 960018737 A KR960018737 A KR 960018737A KR 1019940031967 A KR1019940031967 A KR 1019940031967A KR 19940031967 A KR19940031967 A KR 19940031967A KR 960018737 A KR960018737 A KR 960018737A
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South Korea
Prior art keywords
electrode
semiconductor layer
layer pattern
gate
line
Prior art date
Application number
KR1019940031967A
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Korean (ko)
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KR0174033B1 (en
Inventor
황성연
남동현
김태곤
서영우
염선민
Original Assignee
엄길용
오리온전기 주식회사
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Priority to KR1019940031967A priority Critical patent/KR0174033B1/en
Publication of KR960018737A publication Critical patent/KR960018737A/en
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Publication of KR0174033B1 publication Critical patent/KR0174033B1/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 박막트랜지스터 액정표시장치의 단위화소에 관한 것으로서, 게이트라인과, 데이타라인, 화소전극, 반도체층 패턴, 공통전극 및 전하보존전극등을 구비하는 TFT LCD의 화소전극에서 게이트전극을 절곡된 형상으로 형성하고, 반도체층 패턴을 상기 게이트전극과는 두곳에서 중찹되도록 반도체층 패턴을 반대 방향으로 절곡되도록 형성하며, 전하보존 전극을 상기 화소전극의 주변에 띠형상으로 설치하고, 상기 공통전극의 하부에는 바이어스 라인을 설치하되, 상기 게이트전극이 반도체층 패턴과 중첩되는 부분까지 연장된 바이어스 전극을 구비하였으므로, TFT의 문턱전압 조절이 용이하여 공정수율 및 소자동작의 신뢰성을 향상시킬 수있다.The present invention relates to a unit pixel of a thin film transistor liquid crystal display device, wherein the gate electrode is bent at a pixel electrode of a TFT LCD including a gate line, a data line, a pixel electrode, a semiconductor layer pattern, a common electrode, and a charge storage electrode. The semiconductor layer pattern is formed to be bent in the opposite direction so that the semiconductor layer pattern is overlapped with the gate electrode at two positions, and a charge storage electrode is formed in a band shape around the pixel electrode, A bias line is provided below the bias electrode, and the bias electrode extends to a portion where the gate electrode overlaps the semiconductor layer pattern, so that the threshold voltage of the TFT can be easily adjusted, thereby improving process yield and device operation reliability.

Description

박막 트랜지스터 액정표시장치의 단위화소Unit pixel of thin film transistor liquid crystal display

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 따른 박막 트랜지스터 액정표시장치의 단위화소의 레이아웃도.2 is a layout diagram of unit pixels of a thin film transistor liquid crystal display according to the present invention.

제3도는 제2도에서의 선 A-A에 따른 단면도.3 is a cross-sectional view taken along the line A-A in FIG.

제4도는 제2도에서의 선 B-B에 따른 단면도.4 is a cross-sectional view taken along the line B-B in FIG.

Claims (2)

투명기판상에 일정방향으로 연정되어 있는 데이타 라인과, 상기 데이타 라인과는 다른 방향으로 연장되어 있는 공통전극과, 상기 공통전극과 동일한 방향으로 연장되어 있으며, 채널과 만나는 부분에서 굴곡되어진 게이트전극을 갖는 게이트라인과, 상기 게이트전극과는 반대 방향으로 굴곡되어 두부분에서 중첩되는 반도체층 패턴과, 상기 게이트라인과 데이타라인에 의해 정의되는 블럭의 내측에 형성되어 있는 화소전극과, 상기 화소전극의 주변에 띠형상으로 형성되며, 상기 공통전극과 연결되는 전하저장전극과, 상기 데이타라인의 일측에서 돌출되어 상기 반도체층 패턴의 일측과 접촉되는 소오스전극과, 상기 반도체층 패턴의 타측과 접촉되어 화소전극과 연결되는 드레인전극과, 상기 공통전극의 하부에 형성되어 있는 바이어스 라인과, 상기 바이어스 라인에서 돌출되어 상기 게이트전극과 반도체층 패턴이 중첩 부분과 중첩되는 바이어스 전극을 구비하는 박막트랜지스터 액정표장치의 단위화소.A data line connected in a predetermined direction on the transparent substrate, a common electrode extending in a direction different from the data line, and a gate electrode extending in the same direction as the common electrode and bent at a portion meeting the channel. A gate line, a semiconductor layer pattern that is bent in a direction opposite to the gate electrode, and overlaps in two portions, a pixel electrode formed inside the block defined by the gate line and the data line, and a periphery of the pixel electrode A charge storage electrode formed in a band shape, connected to the common electrode, a source electrode protruding from one side of the data line to be in contact with one side of the semiconductor layer pattern, and a pixel electrode being in contact with the other side of the semiconductor layer pattern A drain electrode connected to the drain electrode, a bias line formed under the common electrode, A unit pixel of a thin film transistor liquid crystal display device having a bias electrode protruding from a bias line and having the gate electrode and the semiconductor layer pattern overlapping an overlapping portion. 제1항에 있어서, 상기 게이트전극이 V자 형상으로 절곡되어 있는 것을 특징으로 하는 박막트랜지스터 액정표시장치의 단위화소.The unit pixel of a thin film transistor liquid crystal display according to claim 1, wherein the gate electrode is bent in a V shape. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940031967A 1994-11-30 1994-11-30 Pixel of thin film transistor liquid crystal display device KR0174033B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940031967A KR0174033B1 (en) 1994-11-30 1994-11-30 Pixel of thin film transistor liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940031967A KR0174033B1 (en) 1994-11-30 1994-11-30 Pixel of thin film transistor liquid crystal display device

Publications (2)

Publication Number Publication Date
KR960018737A true KR960018737A (en) 1996-06-17
KR0174033B1 KR0174033B1 (en) 1999-03-20

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KR101490774B1 (en) * 2008-06-05 2015-02-06 엘지디스플레이 주식회사 Fringe Field Switching Mode Liquid Crystal Display Device

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