KR960016833B1 - Forming method of metal film for anti-diffusion - Google Patents
Forming method of metal film for anti-diffusion Download PDFInfo
- Publication number
- KR960016833B1 KR960016833B1 KR93023900A KR930023900A KR960016833B1 KR 960016833 B1 KR960016833 B1 KR 960016833B1 KR 93023900 A KR93023900 A KR 93023900A KR 930023900 A KR930023900 A KR 930023900A KR 960016833 B1 KR960016833 B1 KR 960016833B1
- Authority
- KR
- South Korea
- Prior art keywords
- tin
- diffusion
- metal film
- forming method
- amorphous
- Prior art date
Links
- 239000002184 metal Substances 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 title 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 5
- 238000000151 deposition Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93023900A KR960016833B1 (en) | 1993-11-11 | 1993-11-11 | Forming method of metal film for anti-diffusion |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93023900A KR960016833B1 (en) | 1993-11-11 | 1993-11-11 | Forming method of metal film for anti-diffusion |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950015651A KR950015651A (ko) | 1995-06-17 |
KR960016833B1 true KR960016833B1 (en) | 1996-12-21 |
Family
ID=19367801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR93023900A KR960016833B1 (en) | 1993-11-11 | 1993-11-11 | Forming method of metal film for anti-diffusion |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960016833B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180002530A (ko) * | 2016-06-29 | 2018-01-08 | 도쿄엘렉트론가부시키가이샤 | 구리막을 형성하는 방법 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100430684B1 (ko) * | 1996-12-31 | 2004-07-30 | 주식회사 하이닉스반도체 | 반도체소자의금속배선형성방법 |
KR100265837B1 (ko) * | 1997-06-30 | 2000-09-15 | 김영환 | 반도체장치의장벽금속막형성방법 |
-
1993
- 1993-11-11 KR KR93023900A patent/KR960016833B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180002530A (ko) * | 2016-06-29 | 2018-01-08 | 도쿄엘렉트론가부시키가이샤 | 구리막을 형성하는 방법 |
US10189230B2 (en) | 2016-06-29 | 2019-01-29 | Tokyo Electron Limited | Method for forming copper film |
Also Published As
Publication number | Publication date |
---|---|
KR950015651A (ko) | 1995-06-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20041119 Year of fee payment: 9 |
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LAPS | Lapse due to unpaid annual fee |