KR960016761B1 - Film condenser - Google Patents

Abstract

No summary.

Description

Deposition Film for Capacitor

1 is a cross-sectional view showing an embodiment of a vapor deposition film for a capacitor according to the present invention.

FIG. 2 is a schematic diagram showing a method of manufacturing the film of FIG.

3 is a plan view showing an example of the product shape of the film of FIG.

4 and 5 are cross-sectional views of conventional metal deposition films for capacitors.

6 is a perspective view showing a state in which a part of the outer packaging of the general metallized plastic film capacitor is broken.

* Explanation of symbols for main parts of the drawings

10: dielectric film, 11: zinc thin film (metal thin film),

12: protective film.

The present invention relates to a metal deposition film that is a material of a metallized plastic film capacitor.

The metallized plastic film capacitor described above may include, for example, a metal deposition film 3 having a non-deposition portion 1A and a metal thin film 2 formed on one surface of the dielectric film 1, as shown in FIG. 2 layers of non-deposition 1A are rolled up and rolled up like 5 degrees, and as shown in FIG. 6, zinc (or solder) 5 is sprayed on both ends of the element 4 (coating the surface with plastic or the like). The outer packaging 7 after connecting the lead wire 6 is shown, and since the metal thin film 2 is very thin (0.035 to 0.1 µm), the breakdown breakdown occurred at the weak part of the film 1. Even so, the so-called self-recovery property is excellent in that insulation is restored by causing the thin film 2 around the fractured portion to be caused by a short circuit current.

By the way, as said metal thin film 2, although aluminum or zinc is generally used, (1) Corrosion generate | occur | produces by (1) corona discharge, an electrode lose | disappears, and a capacitor capacity gradually reduces, (2) It has the drawback that the electrical resistance of the junction 4 with the thermally sprayed electrodes 5 at both ends of the element 4 is large and Joule heat is generated so that the current resistance is better.

On the other hand, the zinc thin film is deteriorated in the moisture resistance, despite the good characteristics compared with the above-described drawbacks, and deteriorates in the capacitor characteristics such as the formation of porous Zn (OH) ₂ by the reaction with moisture and the progression of erosion. There was a flaw.

Therefore, when zinc is conventionally used, (1) the element 4 of the vapor deposition film 3 is impregnated with wax or insulating oil. (2) A material having excellent waterproof property is used as the outer packaging (7). (3) The moisture resistance is improved by means such as amplifying the thickness of the zinc thin film.

However, the above-mentioned means bring about an increase in all costs, and impregnation of wax or insulating oil requires a long time of several tens of hours, and the productivity is deteriorated, and thickening the zinc thin film lowers the self-recovery performance of the capacitor. Defects cannot be avoided.

In addition, each of the above means is for the purpose of protecting the thin film after being formed as a condenser, and it is shipped as an evaporation film before it, and thus it is not possible to prevent contact with moisture in the process of forming the condenser, resulting in deterioration of quality. Has been.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems at once, and forms a metal foil composed of zinc or zinc alloy at least on the surface of the dielectric film, and furthermore, silicon (Si) and silicon oxide (Si oxide) on the metal thin film. ), Or a protective film formed of a mixture thereof.

In this double pack film, the moisture produced by the above-described protective film rich in moisture resistance is blocked by the metal thin film, and the corrosion of the metal thin film can be effectively prevented in either of the condenser molding state and the film state.

In addition, since the protective film of silicon (Si), silicon oxide (Si oxide), or a mixture thereof is formed simultaneously in the process of depositing a metal thin film with a dielectric film, the manufacturing cost is low.

Example

1 is an enlarged cross-sectional view showing an example of a condenser vapor deposition film according to the present invention.

In the figure, reference numeral 10 denotes a dielectric film, on which a zinc thin film 11 and a protective film 12 are stacked.

The dielectric film 10 may include polyethylene terephthalate, polystyrene, polypropylene, polycarbonate, poly4ethylenefluoride, polyethylene, or the like. Although the thickness varies depending on the dielectric constant, the thickness is about several micrometers to several ten micrometers.

The zinc thin film 11 is deposited by vacuum evaporation or the like. The thickness of the zinc thin film 11 is thinner than that of a conventional product so as to obtain good self-recoverability.

In addition, the protective film 12 has a deposition amount of about 0.3 to 20 mg / m 2 in terms of silicic acid (SiO), and even if it is less than 0.3 mg / m 2, a homogeneous film cannot be obtained. If it is thicker than / m 2, the film is easily deformed by deposition.

The above-mentioned vapor deposition film for capacitors is produced by, for example, an apparatus as shown in FIG.

In the figure, reference numeral 20 denotes an uncoiler wound around a wide strip of dielectric film 10, dielectric 21 denotes a deposition drum, and reference numeral 22 denotes a recoil for winding a film. The vapor deposition evaporator 23, the container 24 for ejecting the masking oil 24, the zinc evaporator 25, and the protective film evaporator 26 are uncoiled toward the evaporation drum 21. It is arranged in order from the side of (20), and all of the above are accommodated in the true container (not shown). In this apparatus, in order to manufacture the deposited film, first, while running the film 10 from the uncoiler 20 via the deposition drum 21 to the recoiler 22, the nucleus action intermediate machine 23 is described. By depositing metals such as tin, silver and copper.

In this way, the deposited metal serves as a nucleus for depositing subsequent zinc, and promotes formation of the zinc thin film 11.

Subsequently, the oil is ejected in a band phenomenon in which the width direction is narrowed down at the same interval by the container 24 for ejecting the oil, and the zinc thin film 11 is transferred to the film 10 by the zinc vapor deposition machine 25. To be deposited).

As a result, the zinc thin film 11 is not attached to the oil-attached portion, so that a strip-shaped non-deposition portion is formed.

Then, the protective film 12 is deposited on the zinc thin film 11 by the protective film evaporator 26, and this is a product wound by the recoiler 22.

In the vapor deposition film produced in this way, as shown in FIG. 3, non-deposition portions 10A are formed at regular intervals, and in use, they are cut according to the direction of the arrow in the drawing in the drawing. Is provided to manufacture a capacitor as in the prior art.

In the above-described vapor deposition film for capacitors, since the moisture generated by the protective film 12 formed on the zinc thin film 11 is blocked by the zinc thin film 11, the process leading to forming the capacitor is easy, and thus the zinc thin film ( In addition to preventing the deterioration of quality due to the corrosion of 11) and improving the moisture resistance, the zinc thin film 11 can be formed thin, and a good self-recovery property which is difficult to realize in the conventional structure can be obtained. have.

In addition, the protective film 12 of silicon (Si), silicon oxide (Si oxide), or a mixture thereof can be formed simultaneously in the step of depositing the zinc thin film 11 on the film 10 as described above. Therefore, in spite of the improvement effect of high moisture resistance, the advantage that productivity is high and manufacturing cost is low can be acquired.

In the above embodiment, the same zinc thin film 11 and the protective film 12 were formed by the resistance heating method as the vapor deposition method. Instead, the sputtering method and the electron beam method were used. It is also possible to form vapor deposition by, for example.

The vapor deposition film of the present invention may be of any planar shape, and may be used as a multilayer capacitor that is cut into rectangles and stacked in several layers, instead of being used for a winding capacitor that wraps the vapor deposition film.

In addition, by gradually changing the concentration of oxygen atoms in the protective film 12 in a thicker direction, the bonding strength between the zinc thin film 11 and the protective film 12 is increased, and as necessary, Therefore, a thin film for preventing moisture penetration may be formed on the back surface of the film 10, such as forming a thin film of another material.

Experimental Example

Next, an example of the present invention will be described to demonstrate the effect.

Experimental Example 1

On a polyester film having a thickness of 5 μm, a zinc film was deposited to a thickness of about 0.04 μm at a vacuum degree of 1 × 10 ⁻³ Torr with a normal wound vacuum evaporator (FIG. 2), leaving a non-deposited portion thereon. Silicate (SiO) was deposited at about 4 mg / m 2.

Next, the metallized film obtained in this way was wound up and it was left to stand for 24 hours, while having the temperature of 70 degreeC, the constant temperature of 80% of high humidity, and the constant humidity.

Experimental Example 2

Zinc deposition was carried out under the same conditions as in Experimental Example (1), and a mixture of silicic acid (Si) and SiO ₂ was deposited in terms of SiO, and deposited about 4 mg / m 2. The same type of treatment was performed.

Comparative example

Zinc deposition was carried out under the same conditions as in Experimental Example (1), and the same form as in Experimental Example (1) was treated.

As a result of each of the experiments described above, no change was observed in the zinc thin film in Experimental Example (1), and in the fainting example (2), sparsely swept holes were found in the zinc thin film, whereas in Comparative Example, the entire surface of the zinc thin film was white. It was changed to transparent (Zn (OH) ₂ ).

As described above, in the vapor deposition film for capacitors of the present invention, the protective film formed on the metal thin film blocks the generated moisture by the metal thin film, thereby facilitating the process leading to the molding of the capacitor, thereby reducing the amount of zinc in the metal thin film. As the quality deterioration due to corrosion can be prevented and the moisture resistance is improved, the metal thin film can be made thin, and a good self-recovery property which is difficult to realize by the conventional structure can be obtained.

In addition, since the protective film of silicon (Si), Si oxide, or a mixture thereof can be formed simultaneously in the process of depositing a metal thin film on the dielectric film, the production cost is significantly cheaper without lowering the productivity of the deposited film. It is also possible to obtain such advantages.

Claims (1)

On the surface of the dielectric film 10, a metal thin film 11 made of at least a surface layer of zinc or zinc alloy is formed, and on the metal thin film 11, a protective film made of silicon, Si oxide, or a mixture thereof. E) film formed for a capacitor.

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