KR960015944A - Transverse high speed bipolar transistor and method of manufacturing the same - Google Patents

Transverse high speed bipolar transistor and method of manufacturing the same Download PDF

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Publication number
KR960015944A
KR960015944A KR1019940028428A KR19940028428A KR960015944A KR 960015944 A KR960015944 A KR 960015944A KR 1019940028428 A KR1019940028428 A KR 1019940028428A KR 19940028428 A KR19940028428 A KR 19940028428A KR 960015944 A KR960015944 A KR 960015944A
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South Korea
Prior art keywords
single crystal
oxide film
bipolar transistor
polycrystalline silicon
crystal substrate
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KR1019940028428A
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Korean (ko)
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KR0178291B1 (en
Inventor
이정환
이봉희
백종무
홍기석
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곽정소
한국전자 주식회사
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Publication of KR0178291B1 publication Critical patent/KR0178291B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6625—Lateral transistors

Abstract

본 발명은 횡방향 고속 바이폴라 트랜지스터 및 그 제조방법에 관한 것으로, 횡방향으로 바이폴라 트랜지스터를 형성함으로써 칩면적을 감소시킬 수 있고, 종래의 종방향 소자에서와 같은 매립층과 에피텍셜층을 형성함 필요가 없으므로 공정결합을 줄일 수 있으며, 전극형성전에 전웨이퍼의 표면을 평탄화함으로써 금속의 피복성을 양호하게 하며, 다결정실리콘을 직접 전극으로 사용하기 때문에 직렬저항을 감소시킬뿐만 아니라 소자의 둘레가 산화막을 접하게 됨으로써 접합용량을 감소시켜 고속 스위칭 특성을 얻을 수 있는 효과가 있다.The present invention relates to a lateral high-speed bipolar transistor and a method of manufacturing the same, wherein the chip area can be reduced by forming the bipolar transistor in the lateral direction, and it is necessary to form the buried layer and the epitaxial layer as in the conventional longitudinal element. Therefore, the process bonding can be reduced, and the surface of all wafers can be flattened before forming the electrode to improve the coating property of the metal, and polycrystalline silicon is used as the direct electrode, which reduces the series resistance and also makes the circumference of the device contact the oxide film As a result, it is possible to reduce the junction capacitance and obtain high-speed switching characteristics.

Description

횡방향 고속 바이폴라 트랜지스터 및 그의 제조방법Transverse high speed bipolar transistor and method of manufacturing the same

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 의한 횡방향 고속 바이폴라 트랜지스터의 실리콘 웨이퍼를 접합한 상태도,2 is a state diagram in which a silicon wafer of a transverse fast bipolar transistor according to the present invention is bonded;

제3도는 본 발명에 의한 횡방향 고속 바이폴라 트랜지스터의 접촉창을 연 상태도,3 is a state diagram in which the contact window of the transverse fast bipolar transistor according to the present invention is opened;

제4도는 본 발명에 의한 횡방향 고속 바이폴라 트랜지스터의 단면도.4 is a cross-sectional view of a lateral high speed bipolar transistor according to the present invention.

Claims (6)

에미터, 베이스 및 콘덕터를 형성하기 위한 각각의 불순물 확산영역이 횡방향으로 배열됨과 동시에 상기 각각의 불순을 확산영역이 각각의 다결정실리콘 패턴과 접하는 제l소자와, 상기 제1소자와 다른 전도특성을 가지며, 산화막에 의해 상기 제1소자와 절연분리되는 제2소자를 포함하여 구성된 것을 특징으로 하는 횡방향 고속 바이폴라 트랜지스터.A first element in which each of the impurity diffusion regions for forming the emitter, the base and the conductor are arranged in the transverse direction and the diffusion region of each impurity is in contact with each of the polycrystalline silicon patterns; And a second element having a characteristic and being insulated from and separated from the first element by an oxide film. 제1항에 있어서, 상기 제l 및 제2소자는 상기 각각의 불순물 확산영역과 다결정실리콘 패턴이 상호 180° 회전대칭되도록 구성된 것을 특징으로 하는 횡방향 고속 바이폴라 트랜지스터.The lateral high-speed bipolar transistor according to claim 1, wherein the first and second devices are configured such that the respective impurity diffusion regions and the polysilicon patterns are rotated by 180 ° to each other. 제1항에 있어서, 상기 불순물 확산영역은 단결정실리콘으로 구성된 것을 특징으로 하는 횡방항 고속 바이폴라 트탠지스터.2. The transverse fast bipolar transistor of claim 1, wherein the impurity diffusion region is made of single crystal silicon. 제1항에 있어서, 상기 베이스를 형성하기 위한 불순물 확산영역은 상기 에미터 및 콜렉터를 형성하기 위한 불순물 확산영역과 얕은 접합을 이루도록 구성된 것을 특징으로 하는 횡방향 고속 바이폴라 트랜지스터.The lateral high speed bipolar transistor of claim 1, wherein the impurity diffusion region for forming the base is configured to form a shallow junction with the impurity diffusion region for forming the emitter and the collector. 단결정기판을 식각하여 서로 일정간격을 갖는 다수의 트랜치를 형성한 후 상기 트랜치 내부에 소자간 절연분리를 위한 제1산화막을 성장시키는 공정과, 상기 제1산화막이 형성된 트렌치 내부를 제1다결정실리콘으로 채운 후 다른 기판과 접합하는 공정과, 상기 제1산화막으로 분리된 단결정기판의 일부영역에 상기 단결정기판과 다른 전도형을 가지는 불순물을 주입하는 공정과, 상기 불순물 주입 후 결과물 전면에 제2산화막, 절연막 및 제2산화막을 순차적으로 적층시키는 공정과, 상기 제2산화막, 절연막, 제3산화막을 선택적으로 식각하여 상기 제1다결징실리콘 및 제1산화막으로 절연분리되어 있는 양측 단결정기판의 중앙부와 상기 제1다결정실리콘층 상부에만 남도록 하는 공정과, 상기 식각된 쟤2산화막, 절연막, 제3산화막을 마스크로 하여 상기 절연분리되어 있는 양측 단결정 기판을 식각한 후 식각된 부분을 제2다결정실리콘으로 채우는 공정과, 상기 절연분리되어 있는 양측 제2다결정실리콘에 각 소자에 적합한 전도형의 불순물을 구입하여 불순물 확산영역을 형성하는 공정을 포함하여 구성된 것을 특징으로 하는 횡방향 고속 바이폴라 트탠지스터의 제조방법.Etching a single crystal substrate to form a plurality of trenches having a predetermined distance from each other, and then growing a first oxide film for insulating isolation between devices in the trench; and forming a trench with the first oxide film as the first polycrystalline silicon. Filling the substrate with another substrate; injecting impurities having a different conductivity type from the single crystal substrate into a portion of the single crystal substrate separated by the first oxide film; A step of sequentially stacking an insulating film and a second oxide film, and selectively etching the second oxide film, the insulating film, and the third oxide film to insulate and separate the first single silicon and the first oxide film from each other and the central portion of the single crystal substrate Leaving only the upper portion of the first polycrystalline silicon layer; Etching both sides of the single-crystal substrate that are separated, and filling the etched portions with second polycrystalline silicon; and purchasing conductive impurities suitable for each device from the two-sided polycrystalline silicon, which are separated from each other, The manufacturing method of the lateral high speed bipolar transistor which comprised including the process of forming. 제5항에 있어서, 상기 절연분리되어 있는 제2다결정실리콘에 불순물을 주입하는 불순물 확산영역을 형성하는 공정은, 상기 최초 단결정기판과 다른 불순물이 주입되어 있는 영역을 식각한 후 채워진 제2다결정실리콘에는 상기 최초 단결정실리콘과 동일한 전도형을 갖는 불순물을 주입하여 급속열처리하고, 다른 단결정기판영역을 식각한 후 채워진 제2다결정실리콘에는 상기 최초 단결정기판과 다른 전도형을 갖는 불순물을 주입하여 금속열처리하는 공정을 포함하여 구성된 것을 특징으로 하는 횡방향 고속 바이폴라 트랜지스터의 제조방법.The method of claim 5, wherein the forming of the impurity diffusion region into which the impurity is implanted into the second polysilicon is insulated and separated, wherein the second polycrystalline silicon is filled after etching the region into which the first single crystal substrate and other impurities are implanted. Injecting impurities having the same conductivity type as that of the first single crystal silicon to rapidly heat-process the metal heat treatment by implanting impurities having a different conductivity type from the first single crystal substrate to the second polycrystalline silicon filled after etching other single crystal substrate regions. A method of manufacturing a lateral high speed bipolar transistor, comprising the step of fabricating the same. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940028428A 1994-10-31 1994-10-31 Lateral high speed bipolar transistor and method for manufacturing the same KR0178291B1 (en)

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KR0178291B1 KR0178291B1 (en) 1999-03-20

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