KR960015786A - Multi-Layer Tantalum Capacitor - Google Patents

Multi-Layer Tantalum Capacitor Download PDF

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Publication number
KR960015786A
KR960015786A KR1019940027618A KR19940027618A KR960015786A KR 960015786 A KR960015786 A KR 960015786A KR 1019940027618 A KR1019940027618 A KR 1019940027618A KR 19940027618 A KR19940027618 A KR 19940027618A KR 960015786 A KR960015786 A KR 960015786A
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KR
South Korea
Prior art keywords
tantalum
layer
capacitor
thin plate
multilayer
Prior art date
Application number
KR1019940027618A
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Korean (ko)
Inventor
이성대
Original Assignee
이형도
삼성전기 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 이형도, 삼성전기 주식회사 filed Critical 이형도
Priority to KR1019940027618A priority Critical patent/KR960015786A/en
Publication of KR960015786A publication Critical patent/KR960015786A/en

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Abstract

본 발명은 다층 탄탈륨 캐패시터 및 그 제조방법에 관한 것으로 특히 유전율이 매우 높은 5산화2탄탈(Ta2O5)을 다층으로 적층하여 구성함으로서 소형 대용량을 갖출수 있으며 신뢰성이 높고, 대량생산작업이 가능한 다층 탄탈륨 캐패시터 및 그 제조방법에 관한 것이다.The present invention relates to a multi-layer tantalum capacitor and a method for manufacturing the same, and in particular, by configuring a multi-layered tantalum pentoxide (Ta 2 O 5 ) having a very high dielectric constant in a multi-layer, it can be equipped with a small capacity, high reliability, and mass production work is possible. A multilayer tantalum capacitor and a method of manufacturing the same.

본 발명은 양극과 음극사이의 유전체층이 도전성 박판에 탄탈륨(Ta)을 스퍼터링하여 부착시키고, 열처리하여 형성된 5산화 2탄탈(Ta2O5)을 다수개 적층하며, 상기 5산화 2탄탈층 사이에는 도전성 접착제로서 서로 부착시킨 구조의 다층 탄탈륨 캐패시터와, 그 제조방법을 제공한다.According to the present invention, a dielectric layer between an anode and a cathode is attached by sputtering tantalum (Ta) on a conductive thin plate, and a plurality of tantalum pentoxide (Ta 2 O 5 ) formed by heat treatment are stacked, and between the tantalum pentoxide layers. Provided are a multilayer tantalum capacitor having a structure bonded to each other as a conductive adhesive, and a method of manufacturing the same.

Description

다층 탄탈륨 캐패시터 및 그 제조방법(Multi-Layer Tantalum Capacitor)Multi-Layer Tantalum Capacitor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명의 따른 다층 탄탈륨 캐패시터의 단면도이다.3 is a cross-sectional view of a multi-layer tantalum capacitor according to the present invention.

Claims (2)

양극(10a)과 음극(10b)을 갖추고, 그사이에 유전체층(15)을 위치시킨 캐패시터에 있어서, 상기 유전체층(15)은 도전성 박판(17)에 탄탈륨(Ta)을 스퍼터링하여 부착시키고, 열처리하여 형성된 5산화 2탄탈(Ta2O5)층(20)을 다수개 적층하며, 상기 5산화 2탄탈층(20)사이에는 도전성 접착제로서 부착시킨 구성을 특징으로 하는 다층 탄탈륨 캐패시터.In a capacitor having an anode (10a) and a cathode (10b), the dielectric layer 15 is located therebetween, the dielectric layer 15 is formed by sputtering and attaching tantalum (Ta) to the conductive thin plate 17, heat treatment A multilayer tantalum capacitor, characterized in that a plurality of tantalum pentoxide (Ta 2 O 5 ) layer 20 is laminated, and attached as a conductive adhesive between the tantalum pentoxide layer 20. 양극(10a)과 음극(10b)을 갖추고, 그사이에는 유전체층(15)을 형성한 다층 캐패시터의 제조방법에 있어서, 탄탈륨(Ta)을 도전체인 박판(17)에 스퍼터링(Sputtering)하여 부착하는 단계; 스퍼터링된 탄탈륨을 산소 분위기에서 열처리하여 5산화2탄탈(Ta2O5)층(20)으로 형성한 다음 각각의 셀(Cel1)형태로 전단하는 단계; 셀형을 적층하고 5산화 2탄탈(Ta2O5)층(20)과 아래의 도전체 박판(17)사이를 도전성 접착제로서 부착시키는 단계; 도전체 박판(17)을 서로 연결시켜 양극(10a)과 음극(10b)을 형성하고, 에폭시수지(25)로 피복하여 칩(Chip)형으로 제조하는 단계; 를 포함함을 특징으로 하는 다층 탄탈륨 캐패시터.A method of manufacturing a multilayer capacitor having an anode (10a) and a cathode (10b), and a dielectric layer (15) therebetween, comprising: sputtering and attaching tantalum (Ta) to a thin plate (17) as a conductor; Heat-treating the sputtered tantalum in an oxygen atmosphere to form a tantalum pentoxide (Ta 2 O 5 ) layer 20 and shearing each cell (Cel1); Stacking the cell types and adhering between the tantalum pentoxide (Ta 2 O 5 ) layer 20 and the conductive thin plate 17 below as a conductive adhesive; Connecting the conductive thin plates 17 to each other to form a positive electrode 10a and a negative electrode 10b, and coating the epoxy thin plate 17 with an epoxy resin 25 to produce a chip type; Multilayer tantalum capacitor, characterized in that it comprises a. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940027618A 1994-10-27 1994-10-27 Multi-Layer Tantalum Capacitor KR960015786A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940027618A KR960015786A (en) 1994-10-27 1994-10-27 Multi-Layer Tantalum Capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940027618A KR960015786A (en) 1994-10-27 1994-10-27 Multi-Layer Tantalum Capacitor

Publications (1)

Publication Number Publication Date
KR960015786A true KR960015786A (en) 1996-05-22

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Application Number Title Priority Date Filing Date
KR1019940027618A KR960015786A (en) 1994-10-27 1994-10-27 Multi-Layer Tantalum Capacitor

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100367404B1 (en) * 1999-12-31 2003-01-10 주식회사 하이닉스반도체 Method of forming capacitor with multi-layered TaON dielectic layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100367404B1 (en) * 1999-12-31 2003-01-10 주식회사 하이닉스반도체 Method of forming capacitor with multi-layered TaON dielectic layer

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