KR960015786A - Multi-Layer Tantalum Capacitor - Google Patents
Multi-Layer Tantalum Capacitor Download PDFInfo
- Publication number
- KR960015786A KR960015786A KR1019940027618A KR19940027618A KR960015786A KR 960015786 A KR960015786 A KR 960015786A KR 1019940027618 A KR1019940027618 A KR 1019940027618A KR 19940027618 A KR19940027618 A KR 19940027618A KR 960015786 A KR960015786 A KR 960015786A
- Authority
- KR
- South Korea
- Prior art keywords
- tantalum
- layer
- capacitor
- thin plate
- multilayer
- Prior art date
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Abstract
본 발명은 다층 탄탈륨 캐패시터 및 그 제조방법에 관한 것으로 특히 유전율이 매우 높은 5산화2탄탈(Ta2O5)을 다층으로 적층하여 구성함으로서 소형 대용량을 갖출수 있으며 신뢰성이 높고, 대량생산작업이 가능한 다층 탄탈륨 캐패시터 및 그 제조방법에 관한 것이다.The present invention relates to a multi-layer tantalum capacitor and a method for manufacturing the same, and in particular, by configuring a multi-layered tantalum pentoxide (Ta 2 O 5 ) having a very high dielectric constant in a multi-layer, it can be equipped with a small capacity, high reliability, and mass production work is possible. A multilayer tantalum capacitor and a method of manufacturing the same.
본 발명은 양극과 음극사이의 유전체층이 도전성 박판에 탄탈륨(Ta)을 스퍼터링하여 부착시키고, 열처리하여 형성된 5산화 2탄탈(Ta2O5)을 다수개 적층하며, 상기 5산화 2탄탈층 사이에는 도전성 접착제로서 서로 부착시킨 구조의 다층 탄탈륨 캐패시터와, 그 제조방법을 제공한다.According to the present invention, a dielectric layer between an anode and a cathode is attached by sputtering tantalum (Ta) on a conductive thin plate, and a plurality of tantalum pentoxide (Ta 2 O 5 ) formed by heat treatment are stacked, and between the tantalum pentoxide layers. Provided are a multilayer tantalum capacitor having a structure bonded to each other as a conductive adhesive, and a method of manufacturing the same.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제3도는 본 발명의 따른 다층 탄탈륨 캐패시터의 단면도이다.3 is a cross-sectional view of a multi-layer tantalum capacitor according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940027618A KR960015786A (en) | 1994-10-27 | 1994-10-27 | Multi-Layer Tantalum Capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940027618A KR960015786A (en) | 1994-10-27 | 1994-10-27 | Multi-Layer Tantalum Capacitor |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960015786A true KR960015786A (en) | 1996-05-22 |
Family
ID=66687629
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940027618A KR960015786A (en) | 1994-10-27 | 1994-10-27 | Multi-Layer Tantalum Capacitor |
Country Status (1)
Country | Link |
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KR (1) | KR960015786A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100367404B1 (en) * | 1999-12-31 | 2003-01-10 | 주식회사 하이닉스반도체 | Method of forming capacitor with multi-layered TaON dielectic layer |
-
1994
- 1994-10-27 KR KR1019940027618A patent/KR960015786A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100367404B1 (en) * | 1999-12-31 | 2003-01-10 | 주식회사 하이닉스반도체 | Method of forming capacitor with multi-layered TaON dielectic layer |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |