KR960014723B1 - Method of manufacturing semiconductor with gate isolation diffusion - Google Patents
Method of manufacturing semiconductor with gate isolation diffusion Download PDFInfo
- Publication number
- KR960014723B1 KR960014723B1 KR93016494A KR930016494A KR960014723B1 KR 960014723 B1 KR960014723 B1 KR 960014723B1 KR 93016494 A KR93016494 A KR 93016494A KR 930016494 A KR930016494 A KR 930016494A KR 960014723 B1 KR960014723 B1 KR 960014723B1
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing semiconductor
- gate isolation
- isolation diffusion
- forming
- si3n4
- Prior art date
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- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The method is for manufacturing double structure gate insulator to relieve the mechanical stress of W-polycide. The method comprises the steps of : forming a SiO2 film(2a) on a silicone substrate(1) by dry oxidation method; and forming a gate insulator(2) of SiO2/Si3N4 by forming a Si3N4 film(2b) by LPCVD.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93016494A KR960014723B1 (en) | 1993-08-25 | 1993-08-25 | Method of manufacturing semiconductor with gate isolation diffusion |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR93016494A KR960014723B1 (en) | 1993-08-25 | 1993-08-25 | Method of manufacturing semiconductor with gate isolation diffusion |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950007037A KR950007037A (en) | 1995-03-21 |
KR960014723B1 true KR960014723B1 (en) | 1996-10-19 |
Family
ID=19361865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR93016494A KR960014723B1 (en) | 1993-08-25 | 1993-08-25 | Method of manufacturing semiconductor with gate isolation diffusion |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960014723B1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100418566B1 (en) * | 1996-06-25 | 2004-07-22 | 주식회사 하이닉스반도체 | Method for forming gate electrode of semiconductor device to improve characteristic of gate electrode |
KR100800923B1 (en) * | 2006-12-28 | 2008-02-04 | 동부일렉트로닉스 주식회사 | Method for fabricating semiconductor device |
KR102061794B1 (en) * | 2013-04-30 | 2020-01-03 | 삼성디스플레이 주식회사 | Substrate for display apparatus and display apparatus using the same |
-
1993
- 1993-08-25 KR KR93016494A patent/KR960014723B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR950007037A (en) | 1995-03-21 |
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