KR960014723B1 - Method of manufacturing semiconductor with gate isolation diffusion - Google Patents

Method of manufacturing semiconductor with gate isolation diffusion Download PDF

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Publication number
KR960014723B1
KR960014723B1 KR93016494A KR930016494A KR960014723B1 KR 960014723 B1 KR960014723 B1 KR 960014723B1 KR 93016494 A KR93016494 A KR 93016494A KR 930016494 A KR930016494 A KR 930016494A KR 960014723 B1 KR960014723 B1 KR 960014723B1
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KR
South Korea
Prior art keywords
manufacturing semiconductor
gate isolation
isolation diffusion
forming
si3n4
Prior art date
Application number
KR93016494A
Other languages
Korean (ko)
Other versions
KR950007037A (en
Inventor
Myung-Yeun Kwon
Original Assignee
Hyundai Electronics Ind
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Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR93016494A priority Critical patent/KR960014723B1/en
Publication of KR950007037A publication Critical patent/KR950007037A/en
Application granted granted Critical
Publication of KR960014723B1 publication Critical patent/KR960014723B1/en

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  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

The method is for manufacturing double structure gate insulator to relieve the mechanical stress of W-polycide. The method comprises the steps of : forming a SiO2 film(2a) on a silicone substrate(1) by dry oxidation method; and forming a gate insulator(2) of SiO2/Si3N4 by forming a Si3N4 film(2b) by LPCVD.
KR93016494A 1993-08-25 1993-08-25 Method of manufacturing semiconductor with gate isolation diffusion KR960014723B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93016494A KR960014723B1 (en) 1993-08-25 1993-08-25 Method of manufacturing semiconductor with gate isolation diffusion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93016494A KR960014723B1 (en) 1993-08-25 1993-08-25 Method of manufacturing semiconductor with gate isolation diffusion

Publications (2)

Publication Number Publication Date
KR950007037A KR950007037A (en) 1995-03-21
KR960014723B1 true KR960014723B1 (en) 1996-10-19

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ID=19361865

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93016494A KR960014723B1 (en) 1993-08-25 1993-08-25 Method of manufacturing semiconductor with gate isolation diffusion

Country Status (1)

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KR (1) KR960014723B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100418566B1 (en) * 1996-06-25 2004-07-22 주식회사 하이닉스반도체 Method for forming gate electrode of semiconductor device to improve characteristic of gate electrode
KR100800923B1 (en) * 2006-12-28 2008-02-04 동부일렉트로닉스 주식회사 Method for fabricating semiconductor device
KR102061794B1 (en) * 2013-04-30 2020-01-03 삼성디스플레이 주식회사 Substrate for display apparatus and display apparatus using the same

Also Published As

Publication number Publication date
KR950007037A (en) 1995-03-21

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