KR960012642A - Ⅲ-ⅴ 반도체 소자 및 그 제조공정 - Google Patents

Ⅲ-ⅴ 반도체 소자 및 그 제조공정 Download PDF

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Publication number
KR960012642A
KR960012642A KR1019950030171A KR19950030171A KR960012642A KR 960012642 A KR960012642 A KR 960012642A KR 1019950030171 A KR1019950030171 A KR 1019950030171A KR 19950030171 A KR19950030171 A KR 19950030171A KR 960012642 A KR960012642 A KR 960012642A
Authority
KR
South Korea
Prior art keywords
iii
semiconductor device
manufacturing process
manufacturing
semiconductor
Prior art date
Application number
KR1019950030171A
Other languages
English (en)
Korean (ko)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960012642A publication Critical patent/KR960012642A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)
  • Led Devices (AREA)
KR1019950030171A 1994-09-30 1995-09-15 Ⅲ-ⅴ 반도체 소자 및 그 제조공정 KR960012642A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31661594A 1994-09-30 1994-09-30

Publications (1)

Publication Number Publication Date
KR960012642A true KR960012642A (ko) 1996-04-20

Family

ID=23229827

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950030171A KR960012642A (ko) 1994-09-30 1995-09-15 Ⅲ-ⅴ 반도체 소자 및 그 제조공정

Country Status (4)

Country Link
JP (1) JPH08274413A (fr)
KR (1) KR960012642A (fr)
DE (1) DE29515584U1 (fr)
FR (1) FR2725834A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100997433B1 (ko) * 2003-07-22 2010-11-30 주식회사 하이닉스반도체 반도체 소자의 제조방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4221818B2 (ja) * 1999-05-28 2009-02-12 沖電気工業株式会社 光半導体素子の製造方法
US10418519B2 (en) 2015-12-22 2019-09-17 Apple Inc. LED sidewall processing to mitigate non-radiative recombination

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5061656A (en) * 1990-11-27 1991-10-29 Motorola, Inc. Method for making a self-aligned impurity induced disordered structure
US5164329A (en) * 1991-09-30 1992-11-17 Motorola, Inc. Fabricating a low leakage current LED

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100997433B1 (ko) * 2003-07-22 2010-11-30 주식회사 하이닉스반도체 반도체 소자의 제조방법

Also Published As

Publication number Publication date
DE29515584U1 (de) 1995-11-30
FR2725834A1 (fr) 1996-04-19
JPH08274413A (ja) 1996-10-18

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application