KR960012642A - Ⅲ-Ⅴ semiconductor device and manufacturing process - Google Patents
Ⅲ-Ⅴ semiconductor device and manufacturing process Download PDFInfo
- Publication number
- KR960012642A KR960012642A KR1019950030171A KR19950030171A KR960012642A KR 960012642 A KR960012642 A KR 960012642A KR 1019950030171 A KR1019950030171 A KR 1019950030171A KR 19950030171 A KR19950030171 A KR 19950030171A KR 960012642 A KR960012642 A KR 960012642A
- Authority
- KR
- South Korea
- Prior art keywords
- iii
- semiconductor device
- manufacturing process
- manufacturing
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31661594A | 1994-09-30 | 1994-09-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR960012642A true KR960012642A (en) | 1996-04-20 |
Family
ID=23229827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950030171A KR960012642A (en) | 1994-09-30 | 1995-09-15 | Ⅲ-Ⅴ semiconductor device and manufacturing process |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH08274413A (en) |
| KR (1) | KR960012642A (en) |
| DE (1) | DE29515584U1 (en) |
| FR (1) | FR2725834A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100997433B1 (en) * | 2003-07-22 | 2010-11-30 | 주식회사 하이닉스반도체 | Method of manufacturing semiconductor device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4221818B2 (en) | 1999-05-28 | 2009-02-12 | 沖電気工業株式会社 | Method for manufacturing optical semiconductor element |
| CN108369974B (en) | 2015-12-22 | 2021-05-18 | 苹果公司 | LED sidewall treatment for mitigating non-radiative recombination |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5061656A (en) * | 1990-11-27 | 1991-10-29 | Motorola, Inc. | Method for making a self-aligned impurity induced disordered structure |
| US5164329A (en) * | 1991-09-30 | 1992-11-17 | Motorola, Inc. | Fabricating a low leakage current LED |
-
1995
- 1995-09-15 KR KR1019950030171A patent/KR960012642A/en not_active Application Discontinuation
- 1995-09-28 JP JP27625795A patent/JPH08274413A/en active Pending
- 1995-09-29 FR FR9511477A patent/FR2725834A1/en active Pending
- 1995-09-29 DE DE29515584U patent/DE29515584U1/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100997433B1 (en) * | 2003-07-22 | 2010-11-30 | 주식회사 하이닉스반도체 | Method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08274413A (en) | 1996-10-18 |
| DE29515584U1 (en) | 1995-11-30 |
| FR2725834A1 (en) | 1996-04-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |