KR960012581A - 광전 변환 소자 - Google Patents

광전 변환 소자 Download PDF

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Publication number
KR960012581A
KR960012581A KR1019950028571A KR19950028571A KR960012581A KR 960012581 A KR960012581 A KR 960012581A KR 1019950028571 A KR1019950028571 A KR 1019950028571A KR 19950028571 A KR19950028571 A KR 19950028571A KR 960012581 A KR960012581 A KR 960012581A
Authority
KR
South Korea
Prior art keywords
photoelectric conversion
conversion element
photoelectric
conversion
Prior art date
Application number
KR1019950028571A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR960012581A publication Critical patent/KR960012581A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
KR1019950028571A 1994-09-01 1995-09-01 광전 변환 소자 KR960012581A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6208581A JPH0878719A (ja) 1994-09-01 1994-09-01 光電変換素子

Publications (1)

Publication Number Publication Date
KR960012581A true KR960012581A (ko) 1996-04-20

Family

ID=16558560

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950028571A KR960012581A (ko) 1994-09-01 1995-09-01 광전 변환 소자

Country Status (3)

Country Link
US (1) US5663576A (ko)
JP (1) JPH0878719A (ko)
KR (1) KR960012581A (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9517930D0 (en) * 1995-09-01 1995-11-01 Imperial College Electronically gated microstructure
WO2009069421A1 (ja) * 2007-11-28 2009-06-04 Murata Manufacturing Co., Ltd. 弾性波装置
US8110453B2 (en) * 2008-04-17 2012-02-07 Applied Materials, Inc. Low temperature thin film transistor process, device property, and device stability improvement
TWI398707B (zh) * 2008-05-16 2013-06-11 Au Optronics Corp 光感測單元及具有此光感測單元之畫素結構與液晶顯示面板
TWI382554B (zh) 2008-10-30 2013-01-11 Au Optronics Corp 光感測元件及其製作方法
TWI381534B (zh) * 2009-03-24 2013-01-01 Au Optronics Corp 光學感測器與其製作方法以及具有光學感測器之顯示面板
TWI394071B (zh) * 2009-08-14 2013-04-21 Au Optronics Corp 有機發光二極體觸控面板及其製作方法
JP5525878B2 (ja) * 2010-03-17 2014-06-18 富士フイルム株式会社 光電変換膜積層型固体撮像素子及び撮像装置
US20190296076A1 (en) * 2016-10-11 2019-09-26 Sharp Kabushiki Kaisha Imaging panel and method for producing same
JP7076971B2 (ja) * 2017-09-28 2022-05-30 キヤノン株式会社 撮像装置およびその製造方法ならびに機器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0588390A (ja) * 1982-11-01 1993-04-09 Kanegafuchi Chem Ind Co Ltd 感光体用半導体素子
JPS59204283A (ja) * 1983-05-06 1984-11-19 Agency Of Ind Science & Technol アモルフアス半導体光導電素子
JPS63232366A (ja) * 1986-10-07 1988-09-28 Canon Inc 画像読取装置
JPH0628310B2 (ja) * 1986-12-25 1994-04-13 キヤノン株式会社 光電変換装置
JP3029117B2 (ja) * 1990-03-27 2000-04-04 キヤノン株式会社 光センサ用薄膜半導体装置
JP2899052B2 (ja) * 1990-03-27 1999-06-02 キヤノン株式会社 薄膜半導体装置
JPH03278479A (ja) * 1990-03-27 1991-12-10 Canon Inc 光センサ
US5243202A (en) * 1990-04-25 1993-09-07 Casio Computer Co., Ltd. Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type
JPH0465168A (ja) * 1990-07-05 1992-03-02 Hitachi Ltd 薄膜トランジスタ
JPH04186880A (ja) * 1990-11-21 1992-07-03 Hitachi Ltd 薄膜トランジスタ及びその製造方法
KR920010885A (ko) * 1990-11-30 1992-06-27 카나이 쯔또무 박막반도체와 그 제조방법 및 제조장치 및 화상처리장치
JPH04299578A (ja) * 1991-03-27 1992-10-22 Canon Inc 光電変換素子及び薄膜半導体装置
JPH06342929A (ja) * 1991-05-31 1994-12-13 Ind Technol Res Inst 薄膜トランジスタ光電検出器アレイ及びその製造方法

Also Published As

Publication number Publication date
US5663576A (en) 1997-09-02
JPH0878719A (ja) 1996-03-22

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application