KR960012579B1 - Transistor & method of manufacturing the same - Google Patents

Transistor & method of manufacturing the same Download PDF

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Publication number
KR960012579B1
KR960012579B1 KR88006395A KR880006395A KR960012579B1 KR 960012579 B1 KR960012579 B1 KR 960012579B1 KR 88006395 A KR88006395 A KR 88006395A KR 880006395 A KR880006395 A KR 880006395A KR 960012579 B1 KR960012579 B1 KR 960012579B1
Authority
KR
South Korea
Prior art keywords
transistor
manufacturing
emitter
same
base region
Prior art date
Application number
KR88006395A
Other languages
Korean (ko)
Other versions
KR890017812A (en
Inventor
Young-Han Kim
Original Assignee
Lg Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Semicon Co Ltd filed Critical Lg Semicon Co Ltd
Priority to KR88006395A priority Critical patent/KR960012579B1/en
Publication of KR890017812A publication Critical patent/KR890017812A/en
Application granted granted Critical
Publication of KR960012579B1 publication Critical patent/KR960012579B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

The method of manufacturing transistor comprises the steps of : taper etching of an oxide silicon layer(3) formed on a base region(2); and diffusing an emitter impurity injected by ion-injection of emitter impurity to the base region(2). The transistor increases the effective area of the emitter for high integrity.
KR88006395A 1988-05-31 1988-05-31 Transistor & method of manufacturing the same KR960012579B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR88006395A KR960012579B1 (en) 1988-05-31 1988-05-31 Transistor & method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR88006395A KR960012579B1 (en) 1988-05-31 1988-05-31 Transistor & method of manufacturing the same

Publications (2)

Publication Number Publication Date
KR890017812A KR890017812A (en) 1989-12-18
KR960012579B1 true KR960012579B1 (en) 1996-09-23

Family

ID=19274775

Family Applications (1)

Application Number Title Priority Date Filing Date
KR88006395A KR960012579B1 (en) 1988-05-31 1988-05-31 Transistor & method of manufacturing the same

Country Status (1)

Country Link
KR (1) KR960012579B1 (en)

Also Published As

Publication number Publication date
KR890017812A (en) 1989-12-18

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