KR960012283A - Electrostatic chuck and its manufacturing method - Google Patents

Electrostatic chuck and its manufacturing method Download PDF

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Publication number
KR960012283A
KR960012283A KR1019950033152A KR19950033152A KR960012283A KR 960012283 A KR960012283 A KR 960012283A KR 1019950033152 A KR1019950033152 A KR 1019950033152A KR 19950033152 A KR19950033152 A KR 19950033152A KR 960012283 A KR960012283 A KR 960012283A
Authority
KR
South Korea
Prior art keywords
electrode
electrostatic chuck
dielectric
forming
insulating film
Prior art date
Application number
KR1019950033152A
Other languages
Korean (ko)
Inventor
다께시 아끼모또
Original Assignee
가네꼬 히사시
닛뽕덴끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가네꼬 히사시, 닛뽕덴끼 가부시끼가이샤 filed Critical 가네꼬 히사시
Publication of KR960012283A publication Critical patent/KR960012283A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

유전체와 유전체상에 형성된 정전척 전극으로 이루어지는 정전척은 유전체의 흡착력을 검출하는 제2전극을 포함한다. 제2전극은 유전체의 흡착력을 모니터하기 위한 측정회로에 접속된다.The electrostatic chuck consisting of a dielectric and an electrostatic chuck electrode formed on the dielectric includes a second electrode for detecting the adsorption force of the dielectric. The second electrode is connected to a measuring circuit for monitoring the adsorption force of the dielectric.

Description

정천척 및 그 제조방법Cheoncheon Chuck and its manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3A,3B도는 본 발명의 제1 실시예에 다른 정전척을 개략적으로 도시하는 평면도와 단면도,3A and 3B are a plan view and a sectional view schematically showing an electrostatic chuck according to the first embodiment of the present invention;

제4A-4D도는 본 발명의 제1실시예에서 제조단계를 도시하는 공정도로서의 단면도,4A-4D are cross-sectional views as process drawings showing manufacturing steps in a first embodiment of the present invention;

제5A-5D도는 본 발명의 실시예에서 사용된 측정회로의 상세 회로도로서 제5A도는 저압 측정회로를 도시하며,5A-5D are detailed circuit diagrams of the measuring circuit used in the embodiment of the present invention, and FIG. 5A shows a low pressure measuring circuit.

제5B도는 전류 측정회로를 도시하며,5B shows a current measurement circuit,

제5C도는 전하 측정회로를 도시하며,5C shows a charge measuring circuit,

제5D도는 전하 변화 측정회로를 도시한다.5D shows a charge change measuring circuit.

Claims (13)

유전체와 상기 유전체에 형성된 정전척 전극을 포함하는 정전척에 있어서, 상기 유전체의 흡착력을 검출하기 위한 제2전극을 구비하는 정전척.An electrostatic chuck comprising a dielectric and an electrostatic chuck electrode formed on the dielectric, the electrostatic chuck having a second electrode for detecting an attraction force of the dielectric. 제1항에 있어서, 상기 제2전극은 상기 유전체의 흡착력을 모니터하기 위하여 측정회로에 접속되는 정전척.The electrostatic chuck of claim 1, wherein the second electrode is connected to a measurement circuit to monitor the attraction force of the dielectric. 제2항에 있어서, 상기 측정회로는 레지스터와 전압계의 병령회로로 이루어지는 전압 측정회로인 정전척.3. The electrostatic chuck of claim 2, wherein the measuring circuit is a voltage measuring circuit comprising a parallel circuit of a resistor and a voltmeter. 제2항에 있어서, 상기 측정회로는 레지스터와 전압계의 직렬회로로 이루어지는 전압 측정회로인 정전척.3. The electrostatic chuck of claim 2, wherein the measuring circuit is a voltage measuring circuit comprising a series circuit of a resistor and a voltmeter. 제2항에 있어서, 상기 측정회로는 커패시터와 전압계의 병렬회로로 이루어지는 전압 측정회로인 정전척.The electrostatic chuck of claim 2, wherein the measuring circuit is a voltage measuring circuit comprising a parallel circuit of a capacitor and a voltmeter. 제2항에 있어서, 상기 측정회로는 커패시터와 전압계의 직렬회로로 이루어지는 전압 측정회로인 정전척.The electrostatic chuck of claim 2, wherein the measuring circuit is a voltage measuring circuit comprising a series circuit of a capacitor and a voltmeter. 제1항에 있어서, 상기 제2전극으로부터 얻어진 신호를 사용함으로써 상기 정전척 전극에 인가된 전압을 제어하기 위한 제어회로를 또한 구비하는 정전척.The electrostatic chuck of claim 1, further comprising a control circuit for controlling a voltage applied to the electrostatic chuck electrode by using a signal obtained from the second electrode. 제1항에 있어서, 상기 정전척 전극은 평판형상을 하며, 상기 제2전극은 상기 유전체의 부분을 구성하는 제1절연막을 통하여 정전척 전극상에 배열되고, 상기 유전체의 부분을 구성하는 제2절연막이 상기 제2전극상에 형성되는 정전척.2. The second electrode of claim 1, wherein the electrostatic chuck electrode has a flat plate shape, and the second electrode is arranged on the electrostatic chuck electrode through a first insulating film constituting a portion of the dielectric and constitutes a portion of the dielectric. And an insulating film is formed on said second electrode. 제1항에 있어서, 상기 유전체에 형성된 제3전극을 또한 구비하는 정전척.The electrostatic chuck of claim 1, further comprising a third electrode formed on said dielectric. 제9항에 있어서, 상기 제3전극은 상기 제2전극을 둘러싸며 상기 제2전극과 동일 면상에 형성된 복수의 도우넛형 전극으로 이루어지는 정전척.The electrostatic chuck of claim 9, wherein the third electrode comprises a plurality of donut-shaped electrodes formed on the same surface as the second electrode and surrounding the second electrode. 제9항에 있어서, 상기 제3전극은 독립된 직류 전원에 접속되는 정전척.The electrostatic chuck of claim 9, wherein the third electrode is connected to an independent direct current power source. 기판으로서 유전체 기부상에 정전척 전극을 형성하는 단계와, 상기 정전척 전극상에 제1절연막을 형성하는 단게와, 상기 제1절연막상에 제2전극을 형성하는 단계와, 상기 제2전극상에 제2절연막을 형성하는 단계로 이루어지는 정전척 제조방법.Forming an electrostatic chuck electrode on the dielectric base as a substrate, forming a first insulating film on the electrostatic chuck electrode, forming a second electrode on the first insulating film, and forming a second electrode on the second electrode Forming a second insulating film in the electrostatic chuck. 기판으로서 유전체 기부상에 정전척 전극을 형성하는 단계와, 상기 정전척 전극상에 제1절연막을 형성하는 단계와, 상기 제1절연막상에 제2,3전극을 형성하는 단계와, 상기 제2,3전극상에 제2절연막을 형성하는 단계로 이루어지는 정전척 제조방법.Forming an electrostatic chuck electrode on a dielectric base as a substrate, forming a first insulating film on the electrostatic chuck electrode, forming second and third electrodes on the first insulating film, and And forming a second insulating film on the three electrodes. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950033152A 1994-09-30 1995-09-29 Electrostatic chuck and its manufacturing method KR960012283A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23723194 1994-09-30
JP94-237231 1994-09-30

Publications (1)

Publication Number Publication Date
KR960012283A true KR960012283A (en) 1996-04-20

Family

ID=17012333

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950033152A KR960012283A (en) 1994-09-30 1995-09-29 Electrostatic chuck and its manufacturing method

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KR (1) KR960012283A (en)
GB (1) GB2293689A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100483737B1 (en) * 2001-08-13 2005-04-18 닛신덴키 가부시키 가이샤 Method and apparatus for chucking a substrate

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5933314A (en) * 1997-06-27 1999-08-03 Lam Research Corp. Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks
US5880924A (en) * 1997-12-01 1999-03-09 Applied Materials, Inc. Electrostatic chuck capable of rapidly dechucking a substrate
TW432580B (en) * 1998-09-29 2001-05-01 Applied Materials Inc Piezoelectric method and apparatus for semiconductor wafer detection
US6790375B1 (en) * 1998-09-30 2004-09-14 Lam Research Corporation Dechucking method and apparatus for workpieces in vacuum processors
US6965506B2 (en) 1998-09-30 2005-11-15 Lam Research Corporation System and method for dechucking a workpiece from an electrostatic chuck
US6215640B1 (en) 1998-12-10 2001-04-10 Applied Materials, Inc. Apparatus and method for actively controlling surface potential of an electrostatic chuck
DE102012109073A1 (en) * 2012-09-26 2014-03-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for operating a gripping device and electrostatic gripping device
DE112015000700T5 (en) * 2014-02-07 2016-11-24 Trek, Inc. System and method for clamping a workpiece
CN111954852A (en) * 2018-04-12 2020-11-17 Asml荷兰有限公司 Apparatus comprising an electrostatic chuck and method for operating the apparatus

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2106325A (en) * 1981-09-14 1983-04-07 Philips Electronic Associated Electrostatic chuck
JPH06103683B2 (en) * 1990-08-07 1994-12-14 株式会社東芝 Electrostatic adsorption method
EP0506537A1 (en) * 1991-03-28 1992-09-30 Shin-Etsu Chemical Co., Ltd. Electrostatic chuck
US5325261A (en) * 1991-05-17 1994-06-28 Unisearch Limited Electrostatic chuck with improved release
US5436790A (en) * 1993-01-15 1995-07-25 Eaton Corporation Wafer sensing and clamping monitor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100483737B1 (en) * 2001-08-13 2005-04-18 닛신덴키 가부시키 가이샤 Method and apparatus for chucking a substrate

Also Published As

Publication number Publication date
GB9519925D0 (en) 1995-11-29
GB2293689A (en) 1996-04-03

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