KR960011558A - Resist Material and Pattern Formation - Google Patents
Resist Material and Pattern Formation Download PDFInfo
- Publication number
- KR960011558A KR960011558A KR1019950006581A KR19950006581A KR960011558A KR 960011558 A KR960011558 A KR 960011558A KR 1019950006581 A KR1019950006581 A KR 1019950006581A KR 19950006581 A KR19950006581 A KR 19950006581A KR 960011558 A KR960011558 A KR 960011558A
- Authority
- KR
- South Korea
- Prior art keywords
- pattern formation
- resist material
- resist
- pattern
- formation
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/11—Vinyl alcohol polymer or derivative
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23424694 | 1994-09-02 | ||
JP94-234246 | 1994-09-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960011558A true KR960011558A (en) | 1996-04-20 |
KR100249255B1 KR100249255B1 (en) | 2000-06-01 |
Family
ID=16967972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950006581A KR100249255B1 (en) | 1994-09-02 | 1995-03-27 | Resist material and pattern formation |
Country Status (4)
Country | Link |
---|---|
US (2) | US5558971A (en) |
EP (1) | EP0704762B1 (en) |
KR (1) | KR100249255B1 (en) |
DE (1) | DE69513925T2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010050483A (en) * | 1999-09-17 | 2001-06-15 | 카나가와 치히로 | Resist Compositions and Patterning Process |
Families Citing this family (87)
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---|---|---|---|---|
DE69218393T2 (en) * | 1991-12-16 | 1997-10-16 | Matsushita Electric Ind Co Ltd | Resist material |
DE4414896A1 (en) * | 1994-04-28 | 1995-11-02 | Hoechst Ag | Positive working radiation sensitive mixture |
US6060207A (en) * | 1994-07-11 | 2000-05-09 | Kabushiki Kaisha Toshiba | Photosensitive material |
JP3579946B2 (en) * | 1995-02-13 | 2004-10-20 | Jsr株式会社 | Chemically amplified radiation-sensitive resin composition |
US5700624A (en) * | 1995-05-09 | 1997-12-23 | Shipley Company, L.L.C. | Positive acid catalyzed resists having an alkali soluble resin with acid labile groups and inert blocking groups |
TW460753B (en) * | 1995-07-20 | 2001-10-21 | Shinetsu Chemical Co | Chemically amplified positive resist material |
JP3506817B2 (en) * | 1995-07-26 | 2004-03-15 | クラリアント インターナショナル リミテッド | Radiation sensitive composition |
US5849461A (en) * | 1995-08-01 | 1998-12-15 | Shin-Etsu Chemical Co., Ltd. | Chemically amplified positive resist composition |
TW448344B (en) * | 1995-10-09 | 2001-08-01 | Shinetsu Chemical Co | Chemically amplified positive resist composition |
JP3073149B2 (en) | 1995-10-30 | 2000-08-07 | 東京応化工業株式会社 | Positive resist composition |
TW477913B (en) * | 1995-11-02 | 2002-03-01 | Shinetsu Chemical Co | Sulfonium salts and chemically amplified positive resist compositions |
US5879856A (en) * | 1995-12-05 | 1999-03-09 | Shipley Company, L.L.C. | Chemically amplified positive photoresists |
JP3591672B2 (en) * | 1996-02-05 | 2004-11-24 | 富士写真フイルム株式会社 | Positive photosensitive composition |
ATE199985T1 (en) * | 1996-02-09 | 2001-04-15 | Wako Pure Chem Ind Ltd | POLYMER AND RESIST MATERIAL |
US5962180A (en) * | 1996-03-01 | 1999-10-05 | Jsr Corporation | Radiation sensitive composition |
JPH09260383A (en) * | 1996-03-22 | 1997-10-03 | Sony Corp | Manufacture of semiconductor device |
JP3198915B2 (en) * | 1996-04-02 | 2001-08-13 | 信越化学工業株式会社 | Chemically amplified positive resist material |
US5861231A (en) * | 1996-06-11 | 1999-01-19 | Shipley Company, L.L.C. | Copolymers and photoresist compositions comprising copolymer resin binder component |
US6200726B1 (en) | 1996-09-16 | 2001-03-13 | International Business Machines Corporation | Optimization of space width for hybrid photoresist |
JP3679206B2 (en) * | 1996-09-20 | 2005-08-03 | 東京応化工業株式会社 | Positive resist composition, multilayer resist material and resist pattern forming method using the same |
DE69711802T2 (en) * | 1996-10-16 | 2002-11-28 | Sumitomo Chemical Co., Ltd. | A positive photoresist containing a dipyridyl compound |
US6117621A (en) * | 1997-03-28 | 2000-09-12 | Shin-Etsu Chemical Co., Ltd. | Patterning method |
TW546540B (en) * | 1997-04-30 | 2003-08-11 | Wako Pure Chem Ind Ltd | An agent for reducing the substrate dependence of resist and a resist composition |
US6090518A (en) * | 1997-05-07 | 2000-07-18 | Mitsubishi Chemical Corporation | Radiation sensitive composition |
DE19729067A1 (en) | 1997-07-08 | 1999-01-14 | Agfa Gevaert Ag | Infrared imageable recording material and offset printing plate made therefrom |
US6037107A (en) | 1997-08-28 | 2000-03-14 | Shipley Company, L.L.C. | Photoresist compositions |
US7482107B2 (en) * | 1997-08-28 | 2009-01-27 | Shipley Company, L.L.C. | Photoresist composition |
US7026093B2 (en) * | 1997-08-28 | 2006-04-11 | Shipley Company, L.L.C. | Photoresist compositions |
JP3813721B2 (en) * | 1997-12-26 | 2006-08-23 | 富士写真フイルム株式会社 | Positive photosensitive composition |
US6048672A (en) * | 1998-02-20 | 2000-04-11 | Shipley Company, L.L.C. | Photoresist compositions and methods and articles of manufacture comprising same |
US6303263B1 (en) * | 1998-02-25 | 2001-10-16 | International Business Machines Machines | Irradiation sensitive positive-tone resists using polymers containing two acid sensitive protecting groups |
JP3955385B2 (en) | 1998-04-08 | 2007-08-08 | Azエレクトロニックマテリアルズ株式会社 | Pattern formation method |
JP3955384B2 (en) | 1998-04-08 | 2007-08-08 | Azエレクトロニックマテリアルズ株式会社 | Chemically amplified resist composition |
JP3743187B2 (en) * | 1998-05-08 | 2006-02-08 | 住友化学株式会社 | Photoresist composition |
US6153733A (en) * | 1998-05-18 | 2000-11-28 | Tokyo Ohka Kogyo Co., Ltd. | (Disulfonyl diazomethane compounds) |
EP0959389B1 (en) * | 1998-05-19 | 2004-03-31 | JSR Corporation | Diazodisulfone compound and radiation-sensitive resin composition |
US6280911B1 (en) * | 1998-09-10 | 2001-08-28 | Shipley Company, L.L.C. | Photoresist compositions comprising blends of ionic and non-ionic photoacid generators |
TWI263866B (en) | 1999-01-18 | 2006-10-11 | Sumitomo Chemical Co | Chemical amplification type positive resist composition |
US6200728B1 (en) * | 1999-02-20 | 2001-03-13 | Shipley Company, L.L.C. | Photoresist compositions comprising blends of photoacid generators |
JP3963625B2 (en) * | 1999-02-24 | 2007-08-22 | 富士フイルム株式会社 | Positive photoresist composition |
SG78412A1 (en) | 1999-03-31 | 2001-02-20 | Ciba Sc Holding Ag | Oxime derivatives and the use thereof as latent acids |
KR100704423B1 (en) | 1999-03-31 | 2007-04-06 | 스미또모 가가꾸 가부시키가이샤 | Chemical amplification type positive resist |
US6531259B1 (en) * | 1999-06-21 | 2003-03-11 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method and pattern formation material |
US6338931B1 (en) | 1999-08-16 | 2002-01-15 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
KR100538501B1 (en) | 1999-08-16 | 2005-12-23 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Novel Onium Salts, Photoacid Generators for Resist Compositions, Resist Compositions and Patterning Process |
US6416928B1 (en) | 1999-10-06 | 2002-07-09 | Shin-Etsu Chemical Co., Ltd. | Onium salts, photoacid generators, resist compositions, and patterning process |
US6395446B1 (en) | 1999-10-06 | 2002-05-28 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
US6210859B1 (en) * | 1999-10-15 | 2001-04-03 | Korea Kumho Petrochemical Co., Ltd. | Copolymer for the manufacture of chemical amplified photoresist and a positive photoresist composition using the same |
TW538312B (en) | 2000-03-07 | 2003-06-21 | Shinetsu Chemical Co | Chemical amplification, positive resist compositions |
KR100674073B1 (en) | 2000-03-07 | 2007-01-26 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Chemical Amplification, Positive Resist Compositions |
US6692883B2 (en) | 2000-04-21 | 2004-02-17 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
US6624257B2 (en) | 2000-08-23 | 2003-09-23 | Sumitomo Chemical Company, Limited | Method of quantifying protective ratio of hydroxyl groups of polymer compound |
CN1297537C (en) * | 2000-08-30 | 2007-01-31 | 和光纯药工业株式会社 | Sulfonium salt compound |
JP4253427B2 (en) * | 2000-09-19 | 2009-04-15 | 富士フイルム株式会社 | Positive resist composition |
JP4288446B2 (en) | 2000-10-23 | 2009-07-01 | 信越化学工業株式会社 | Novel onium salt, photoacid generator for resist material, resist material and pattern forming method |
JP4288445B2 (en) | 2000-10-23 | 2009-07-01 | 信越化学工業株式会社 | Novel onium salt, photoacid generator for resist material, resist material and pattern forming method |
KR20030076225A (en) | 2001-04-04 | 2003-09-26 | 아치 스페셜티 케미칼즈, 인코포레이티드 | Silicon-containing acetal protected polymers and photoresists compositions thereof |
TWI267697B (en) * | 2001-06-28 | 2006-12-01 | Tokyo Ohka Kogyo Co Ltd | Chemical amplified type positive resist component and resist packed-layer material and forming method of resist pattern and manufacturing method of semiconductor device |
TWI230839B (en) * | 2001-07-09 | 2005-04-11 | Mitsui Chemicals Inc | Positive type photosensitivity resist compositions and uses thereof |
TWI225968B (en) * | 2001-09-28 | 2005-01-01 | Shinetsu Chemical Co | Novel sulfonyliazomethanes, photoacid generators, resist compositions, and patterning process |
JP3886358B2 (en) * | 2001-10-31 | 2007-02-28 | 松下電器産業株式会社 | Pattern formation method |
US7022455B2 (en) * | 2001-12-28 | 2006-04-04 | Shipley Company, L.L.C. | Photoacid-labile polymers and photoresists comprising same |
JP4080784B2 (en) * | 2002-04-26 | 2008-04-23 | 東京応化工業株式会社 | Resist developer, resist pattern forming method using the same, and resist developer solution |
TW200405128A (en) | 2002-05-01 | 2004-04-01 | Shinetsu Chemical Co | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process |
KR101003022B1 (en) | 2002-06-26 | 2010-12-22 | 아치 스페셜티 케미칼즈, 인코포레이티드 | Photosensitive compositions |
JP3991213B2 (en) * | 2002-08-09 | 2007-10-17 | 信越化学工業株式会社 | Novel sulfonyldiazomethane compound, photoacid generator, resist material and pattern forming method using the same |
JP3991222B2 (en) * | 2003-02-13 | 2007-10-17 | 信越化学工業株式会社 | Novel sulfonyldiazomethane compound, photoacid generator, resist material and pattern forming method using the same |
JP3991223B2 (en) | 2003-02-13 | 2007-10-17 | 信越化学工業株式会社 | Novel sulfonyldiazomethane compound, photoacid generator, resist material and pattern forming method using the same |
DE602004023668D1 (en) * | 2003-03-31 | 2009-12-03 | Fujifilm Corp | Positive resist composition |
JP4386710B2 (en) * | 2003-04-28 | 2009-12-16 | 東京応化工業株式会社 | Photoresist composition, low-molecular compound and high-molecular compound for the photoresist composition |
JP4149306B2 (en) * | 2003-04-30 | 2008-09-10 | 東京応化工業株式会社 | Positive resist composition and resist pattern forming method |
JP4146755B2 (en) | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | Pattern formation method |
JP4088784B2 (en) * | 2003-06-19 | 2008-05-21 | 信越化学工業株式会社 | Method for producing polymer compound and resist material |
JP4308051B2 (en) * | 2004-03-22 | 2009-08-05 | 富士フイルム株式会社 | Photosensitive composition and pattern forming method using the same |
US7727702B2 (en) | 2004-04-07 | 2010-06-01 | Ciba Specialty Chemicals Corp. | Method of coloring a coating composition |
EP1686424A3 (en) * | 2005-01-27 | 2009-11-04 | JSR Corporation | Radiation-sensitive resin composition |
JP4387957B2 (en) * | 2005-02-02 | 2009-12-24 | 東京応化工業株式会社 | Positive resist composition for thin film implantation process and resist pattern forming method |
US20060188812A1 (en) * | 2005-02-21 | 2006-08-24 | Tomoki Nagai | Phenolic hydroxyl group-containing copolymer and radiation-sensitive resin composition |
JP4991150B2 (en) * | 2005-12-21 | 2012-08-01 | 東京応化工業株式会社 | Resist composition and method for producing resist composition |
US8053158B2 (en) | 2006-01-19 | 2011-11-08 | Samsung Electronics Co., Ltd. | Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns |
KR101813298B1 (en) | 2010-02-24 | 2017-12-28 | 바스프 에스이 | Latent acids and their use |
JP5782283B2 (en) | 2010-03-31 | 2015-09-24 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | Novel polymer and photoresist compositions |
US20110300367A1 (en) | 2010-06-07 | 2011-12-08 | Ching-Kee Chien | Optical Fiber With Photoacid Coating |
KR20130032071A (en) * | 2011-09-22 | 2013-04-01 | 주식회사 동진쎄미켐 | I-line photoresist composition and method of forming fine pattern using the same |
US9322986B2 (en) | 2013-06-24 | 2016-04-26 | Corning Incorporated | Optical fiber coating for short data network |
CN107207456B (en) | 2015-02-02 | 2021-05-04 | 巴斯夫欧洲公司 | Latent acids and their use |
JP6512049B2 (en) * | 2015-09-15 | 2019-05-15 | 信越化学工業株式会社 | Resist material and pattern formation method |
Family Cites Families (31)
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---|---|---|---|---|
US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
JPS6052845A (en) | 1983-09-02 | 1985-03-26 | Japan Synthetic Rubber Co Ltd | Pattern forming material |
US4603101A (en) | 1985-09-27 | 1986-07-29 | General Electric Company | Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials |
JPH01155338A (en) | 1987-12-14 | 1989-06-19 | Hitachi Ltd | Photosensitive resin composition |
JPH07117752B2 (en) | 1987-12-14 | 1995-12-18 | 株式会社日立製作所 | Photosensitive resin composition |
JPH07117750B2 (en) | 1987-09-24 | 1995-12-18 | 株式会社日立製作所 | Photosensitive resin composition |
JPH01154048A (en) | 1987-12-10 | 1989-06-16 | Toshiba Corp | Photosensitive composition |
JP2615742B2 (en) | 1988-01-22 | 1997-06-04 | 松下電器産業株式会社 | Resist using photosensitive compound |
DE3817012A1 (en) | 1988-05-19 | 1989-11-30 | Basf Ag | POSITIVE AND NEGATIVE WORKING RADIATION-SENSITIVE MIXTURES AND METHOD FOR THE PRODUCTION OF RELIEF PATTERNS |
JPH0225850A (en) | 1988-07-15 | 1990-01-29 | Hitachi Ltd | Radiation sensitive composition and pattern forming method using same |
JP2578646B2 (en) | 1988-07-18 | 1997-02-05 | 三洋電機株式会社 | Non-aqueous secondary battery |
JPH0262544A (en) | 1988-08-30 | 1990-03-02 | Tosoh Corp | Photoresist composition |
EP0366590B2 (en) | 1988-10-28 | 2001-03-21 | International Business Machines Corporation | Highly sensitive positive photoresist compositions |
JPH02161436A (en) | 1988-12-15 | 1990-06-21 | Oki Electric Ind Co Ltd | Photoresist composition and its usage |
EP0388343B1 (en) | 1989-03-14 | 1996-07-17 | International Business Machines Corporation | Chemically amplified photoresist |
JPH0383063A (en) | 1989-08-28 | 1991-04-09 | Kanto Chem Co Inc | Pattern forming method |
DE3930087A1 (en) * | 1989-09-09 | 1991-03-14 | Hoechst Ag | POSITIVELY WORKING RADIATION-SENSITIVE MIXTURE AND PRODUCTION OF RADIATION-SENSITIVE RECORDING MATERIAL THEREOF |
DE3930086A1 (en) * | 1989-09-09 | 1991-03-21 | Hoechst Ag | POSITIVELY WORKING RADIATION-SENSITIVE MIXTURE AND PRODUCTION OF RADIATION-SENSITIVE RECORDING MATERIAL THEREOF |
EP0440374B1 (en) | 1990-01-30 | 1997-04-16 | Wako Pure Chemical Industries Ltd | Chemical amplified resist material |
US5216135A (en) | 1990-01-30 | 1993-06-01 | Wako Pure Chemical Industries, Ltd. | Diazodisulfones |
JP2500533B2 (en) | 1990-01-30 | 1996-05-29 | 和光純薬工業株式会社 | Novel diazodisulfone compound |
JP2970879B2 (en) | 1990-01-30 | 1999-11-02 | 和光純薬工業株式会社 | Chemically amplified resist material |
DE4007924A1 (en) * | 1990-03-13 | 1991-09-19 | Basf Ag | Radiation-sensitive mixt., esp. for positive photoresists - contains phenolic resin binder in which 30-70 per cent of hydroxyl gps. are protected, esp. by 2-tetra:hydro-pyranyl or -furanyl gps. |
JPH03282550A (en) | 1990-03-30 | 1991-12-12 | Oki Electric Ind Co Ltd | Photoresist composition |
JP2632066B2 (en) * | 1990-04-06 | 1997-07-16 | 富士写真フイルム株式会社 | Positive image forming method |
JP3030672B2 (en) | 1991-06-18 | 2000-04-10 | 和光純薬工業株式会社 | New resist material and pattern forming method |
US5332650A (en) * | 1991-09-06 | 1994-07-26 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive composition |
DE4202845A1 (en) | 1992-01-31 | 1993-08-05 | Basf Ag | RADIATION-SENSITIVE MIXTURE |
JP3342124B2 (en) | 1992-09-14 | 2002-11-05 | 和光純薬工業株式会社 | Fine pattern forming material and pattern forming method |
EP0588544A3 (en) * | 1992-09-14 | 1994-09-28 | Wako Pure Chem Ind Ltd | Fine pattern forming material and pattern formation process |
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-
1995
- 1995-03-21 US US08/407,611 patent/US5558971A/en not_active Expired - Lifetime
- 1995-03-23 EP EP95301947A patent/EP0704762B1/en not_active Expired - Lifetime
- 1995-03-23 DE DE69513925T patent/DE69513925T2/en not_active Expired - Lifetime
- 1995-03-27 KR KR1019950006581A patent/KR100249255B1/en not_active IP Right Cessation
- 1995-11-29 US US08/564,591 patent/US5558976A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010050483A (en) * | 1999-09-17 | 2001-06-15 | 카나가와 치히로 | Resist Compositions and Patterning Process |
Also Published As
Publication number | Publication date |
---|---|
EP0704762A1 (en) | 1996-04-03 |
KR100249255B1 (en) | 2000-06-01 |
EP0704762B1 (en) | 1999-12-15 |
US5558976A (en) | 1996-09-24 |
DE69513925T2 (en) | 2000-06-08 |
DE69513925D1 (en) | 2000-01-20 |
US5558971A (en) | 1996-09-24 |
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