KR960010065B1 - Tungsten plug forming method of semiconductor device - Google Patents

Tungsten plug forming method of semiconductor device Download PDF

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Publication number
KR960010065B1
KR960010065B1 KR92024289A KR920024289A KR960010065B1 KR 960010065 B1 KR960010065 B1 KR 960010065B1 KR 92024289 A KR92024289 A KR 92024289A KR 920024289 A KR920024289 A KR 920024289A KR 960010065 B1 KR960010065 B1 KR 960010065B1
Authority
KR
South Korea
Prior art keywords
tungsten film
forming
semiconductor device
forming method
tungsten plug
Prior art date
Application number
KR92024289A
Other languages
Korean (ko)
Other versions
KR940016729A (en
Inventor
Keun-Yuk Lee
Sung-Bo Hwang
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR92024289A priority Critical patent/KR960010065B1/en
Publication of KR940016729A publication Critical patent/KR940016729A/en
Application granted granted Critical
Publication of KR960010065B1 publication Critical patent/KR960010065B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The method is provided to improve the quality of the device with reliability and reduction of resistance by preventing key hall, and comprises the steps of: forming a contacting window by etching an interface insulating layer (2) selectively; forming a junction layer (3) to increase the combining force between the interface insulating layer (2) and a tungsten film (4); forming a first tungsten film (4) on the junction layer (3); etching an over hang generated by the tungsten film; forming a second tungsten film (6) on the first tungsten film; forming a plug in the contacting window by etch back of the first, the second tungsten film and the junction layer.
KR92024289A 1992-12-15 1992-12-15 Tungsten plug forming method of semiconductor device KR960010065B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR92024289A KR960010065B1 (en) 1992-12-15 1992-12-15 Tungsten plug forming method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR92024289A KR960010065B1 (en) 1992-12-15 1992-12-15 Tungsten plug forming method of semiconductor device

Publications (2)

Publication Number Publication Date
KR940016729A KR940016729A (en) 1994-07-25
KR960010065B1 true KR960010065B1 (en) 1996-07-25

Family

ID=19345583

Family Applications (1)

Application Number Title Priority Date Filing Date
KR92024289A KR960010065B1 (en) 1992-12-15 1992-12-15 Tungsten plug forming method of semiconductor device

Country Status (1)

Country Link
KR (1) KR960010065B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11145752B2 (en) 2019-09-17 2021-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Residue removal in metal gate cutting process

Also Published As

Publication number Publication date
KR940016729A (en) 1994-07-25

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