KR960009096B1 - Manufacturing method of semiconductor device field oxide - Google Patents
Manufacturing method of semiconductor device field oxide Download PDFInfo
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- KR960009096B1 KR960009096B1 KR1019920027043A KR920027043A KR960009096B1 KR 960009096 B1 KR960009096 B1 KR 960009096B1 KR 1019920027043 A KR1019920027043 A KR 1019920027043A KR 920027043 A KR920027043 A KR 920027043A KR 960009096 B1 KR960009096 B1 KR 960009096B1
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- field oxide
- oxide film
- tca
- oxidation process
- semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Abstract
Description
제 1 도는 본 발명의 공정 제조 방법에 의하여 형성한 필드 산화막의 단면도.1 is a cross-sectional view of a field oxide film formed by the process fabrication method of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1a : 실제 공정시 성장(oxidation)된 필드 산화막의 두께1a: thickness of field oxide film grown during actual process
1b : 소자분리를 위한 마스크 패턴된 간격1b: Mask patterned spacing for device isolation
1c : 전체 필드 산화막의 길이1c: length of full field oxide film
1 : 실리콘 기판 2 : 패드 산화막1 silicon substrate 2 pad oxide film
3 : 폴리 실리콘막 4 : 질화막3: polysilicon film 4: nitride film
5 : 필드 산화막5: field oxide film
본 발명은 반도체 소자의 필드 산화막 제조 방법에 관한 것으로, 특히 필드 산화막의 주산화 공정 단계인 건식 산화시 O2/TCA 비율 변화와, 습식 산화시 TCA(Tri-chloro-ethane)를 첨가시켜 필드 산화막의 버즈 비크를 감소시키고 필드 산화막의 두께 감소 현상을 방지하여 소자의 전기적 특성을 향상시키는 반도체 소자의 필드 산화막 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a field oxide film of a semiconductor device. In particular, a field oxide film is formed by adding a change in O 2 / TCA ratio during dry oxidation, which is a main oxidation step of the field oxide film, and by adding tri-chloro-ethane (TCA) during wet oxidation. The present invention relates to a method of manufacturing a field oxide film of a semiconductor device, which reduces the buzz beak and prevents the thickness reduction of the field oxide film, thereby improving the electrical characteristics of the device.
고집적 반도체 소자의 소자 분리 기술 방법으로 LOCOS(Local oxidation fo silicon) 방법과 PBL(Poly buffered Locos) 방법을 사용하고 있으며 특히 PBL 방법으로 필드 산화막 성장시 필드 산화막의 두께 감소 현상이나 버즈 비크(bird's beak) 현상은 LOCOS에 비하여 어느 정도 감소되나 이러한 문제점들은 필드 산화막 제조 방법 자체에 좌우되고 있다.Local oxidation fo silicon (LOCOS) method and poly buffered locos (PBL) method are used as the method of device isolation of high-density semiconductor devices. Especially, the PBL method reduces the thickness of the field oxide film or the bird's beak when the field oxide film is grown. The phenomenon is somewhat reduced compared to LOCOS, but these problems are dependent on the field oxide manufacturing method itself.
표 1을 참조하여 종래 기술 방법으로 필드 산화막을 형성하는 공정 단계를 설명해보면 N2/Lo2의 비율을 30/1SLPM(standard litter permeter)로 조성하여 800℃의 온도에서 웨이퍼를 튜브에 장착하는 공정을 진행하고, 주산화 공정을 진행하고 다시 온도를 800℃로 하강시킨 후 웨이퍼를 꺼내고(pull) N2분위기에서 냉각하는 단계를 진행하며 상기의 주산화 공정은 O2/TCA의 비율을 8/0.251SLPM로 하여 1100℃의 온도로 28분동안 진행하는 습식산화 공정과 O2및 N2퍼지(pruge) 공정 단계로 진행된다.Referring to Table 1, the process steps for forming a field oxide film by a conventional method are described. A process of mounting a wafer on a tube at a temperature of 800 ° C. by setting a ratio of N 2 / Lo 2 to 30 / 1SLPM (standard litter permeter). Proceed with the main oxidation process, and after the temperature is lowered to 800 ° C., the wafer is pulled out and cooled in an N 2 atmosphere, wherein the main oxidation process produces an O 2 / TCA ratio of 8 /. It proceeds to the wet oxidation process and the O 2 and N 2 purge process step proceeds for 28 minutes at a temperature of 1100 ℃ at 0.251SLPM.
표 2 : 종래기술에 의해 필드 산화막을 형성하는 공정단계Table 2: Process Step of Forming Field Oxide Film by the Prior Art
상기의 종래 방법에 의한 PBL 구조의 필드 산화막 제조 방법에서 사용하고 있는 주산화 공정중 습식 산화 공정은 H2와 O2가스를 사용하고 있으므로 옥시던트(oxidant)의 고점도에 의해 결정(defect)이 발생하며 또한 필드 산화막 자체에 유기된 홀(Trapped hole)과 전하 이온(charge ion)들에 의하여 누설 전류를 유발하여 블랙 다운(breakdown) 감소를 나타내고 있을 뿐 아니라 필드 산화막의 두께 감소 현상에 의하여 원하는 두께를 성장하고자 하는 경우 버즈 비크가 생겨 단위셀간의 간격(space) 확보가 어렵게 된다.In the main oxidation process used in the PBL structure field oxide film production method according to the conventional method, since the H 2 and O 2 gases are used, defects are generated due to high viscosity of oxidant. In addition, the leakage current is induced by the trapped holes and charge ions in the field oxide itself, thereby reducing the blackdown and increasing the desired thickness by the thickness reduction of the field oxide. If you want to have a buzz beak it is difficult to secure the space (space) between the unit cells.
따라서, 본 발명은 필드 산화막의 제조시 주산화 공정의 건식 산화시 O2/TCA 가스 비율을 변화시키고 습식 산화 공정 단계에서 TCA 가스를 첨가시켜 발생되는 HCl에 의하여 옥시던트의 점도를 감소시켜 필드 산화막의 두께 감소 현상을 방지하여 비즈비크를 감소시키는 반도체 소자의 필드 산화막 제조 방법을 제공하는데 그 목적이 있다.Accordingly, the present invention is to change the O 2 / TCA gas ratio during the dry oxidation of the main oxidation process in the production of the field oxide film and to reduce the viscosity of the oxidant by HCl generated by adding the TCA gas in the wet oxidation process step of the field oxide film SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a field oxide film of a semiconductor device in which a thickness reduction phenomenon is prevented to reduce a bead.
이하, 본 발명을 상세히 설명하기로 한다.Hereinafter, the present invention will be described in detail.
표 2는 본 발명에 의해 필드 산화막을 형성하는 공정 단계를 나타낸 것으로 종래 기술(표 1)의 공정 단계와 비교하여 볼 때 800℃의 온도에서 N2/LO2의 비율을 10/1SLPM으로 장착하는 단계와 주산화 공정 단계후 웨이퍼를 꺼내고 냉각하는 단계를 변화시키지 않고 다만 주산화 공정단계의 건식 산화 공정시 O2/TCA의 비율을 8/0.8SLPM으로 하고 온도를 1100℃로 하며 습식 산화 공정시 1100℃의 온도에서 O2/H2/TCA가스를 사용하여 6/9/0.8SLPM 비율로 진행시키는 것이다.Table 2 shows the process steps for forming a field oxide film according to the present invention, in which the ratio of N 2 / LO 2 is mounted at 10 / 1SLPM at a temperature of 800 ° C. as compared with the process steps of the prior art (Table 1). Do not change the step of taking out and cooling the wafer after the step and the main oxidation process, but in the dry oxidation process of the main oxidation process step, the ratio of O 2 / TCA is 8 / 0.8SLPM and the temperature is 1100 ° C. The O 2 / H 2 / TCA gas at a temperature of 1100 ℃ to proceed at a 6/9 / 0.8 SLPM ratio.
표 2 : 종래기술에 의해 필드 산화막을 형성하는 공정단계Table 2: Process Step of Forming Field Oxide Film by the Prior Art
제 1 도는 본 발명의 제조 방법에 의하여 형성된 필드 산화막의 단면도로서, 실리콘 기판(1) 상부에 패드 산화막(2), 폴리실리콘막(3), 질화막(4)을 순차적으로 적층한 후 소자 분리 마스크(도시안됨)를 사용하여 예정된 부분을 식각한 후 소자 분리 마스크를 제거하고 필드 산화막(5)을 성장시킨 단면도이며 1a는 필드 산화막의 두께 감소 여부를 판단하는 필드 산화막의 두께이며, Ib는 소자 분리 마스크 패턴의 간격이고 1C는 전체 필드 산화막의 길이를 나타낸다.1 is a cross-sectional view of a field oxide film formed by the manufacturing method of the present invention, in which a pad oxide film 2, a polysilicon film 3, and a nitride film 4 are sequentially stacked on a silicon substrate 1, and then an element isolation mask. (Not shown) is a cross-sectional view of etching the predetermined portion and removing the device isolation mask and growing the field oxide film 5, 1a is the thickness of the field oxide film to determine whether the thickness of the field oxide film is reduced, and Ib is the device isolation The interval between the mask patterns and 1C represents the length of the entire field oxide film.
표 3은 종래의 방법과 본 발명에 의한 제조 방법 결과를 비교한 도면으로서 종래의 방법과 비교하여 볼때 TCA를 첨가한 본 발명에 의한 제조 방법이 필드 산화막의 두께가 두꺼우며 전체 필드 산화막외 길이도 각각의 패턴 크기(size)에 따라 모두 작으므로 셀(cell)간의 간격 확보가 용이함을 알 수 있다.Table 3 is a drawing comparing the results of the conventional method and the manufacturing method according to the present invention. In comparison with the conventional method, the manufacturing method according to the present invention, in which the TCA is added, has a thick field oxide film and a total length of the field oxide film. It can be seen that it is easy to secure the spacing between cells because they are all small according to each pattern size.
표 3 : 종래 방법과 본 발명에 의한 필드 산화막의 각 위치별 사이즈를 측정한 크기.Table 3: Sizes measured for each position of the field oxide film according to the conventional method and the present invention.
상기 TCA의 화학식은 CCl3-CH3으로서, 구성원자인 염소(Cl)가 불안정한 상태로 결합되어 있어 타물질과 쉽게 반응하는 성질을 가지므로 본 발명에 사용된 TCA는 습식열산화공정시 O2, H2및 TCA를 플로우시키면서 상기 TCA가 H2O와 반응하여 HCl를 형성한다.The chemical formula of the TCA is CCl 3 -CH 3 , because the member chlorine (Cl) is bonded in an unstable state to easily react with other substances, TCA used in the present invention is O 2 , The TCA reacts with H 2 O to form HCl while flowing H 2 and TCA.
이때, 상기 HCl은 산화막 내부의 점성흐름을 증가시켜 산화막의 내부에 내포되는 결함을 감소시키고, 상기 점성흐름의 증가는 산화막의 점성의 감소를 의미한다. 여기서, 상기 HCl의 Cl기는 필드 산화막인 SiO2와 결합하여 필드 산화막의 성장률을 증가시킨다.At this time, the HCl increases the viscosity flow in the oxide film to reduce defects included in the oxide film, and the increase in the viscosity flow means a decrease in the viscosity of the oxide film. Here, the Cl group of HCl is combined with SiO 2 , a field oxide film, to increase the growth rate of the field oxide film.
본 발명에 의하면, 필드 산화막 성장시 주산화 공정중 건식 산화시의 O2/TCA의 비율의 변화와 습식 산화 공정에서 TCA를 첨가시켜 주므로써 HCl에 의하여 옥시던트의 정도를 감소시켜 빠른 시간에 필드 산화막을 성장할 수 있게 되므로, 필드 산화막의 두께 감소 현상을 방지할 수 있으며 버즈비크를 감소시켜 단위 셀간의 간격을 확보할 수 있을 뿐 아니라 필드 산화막 내의 결점을 감소시켜 반도체소자의 전기적 특성을 향상시킬 수 있는 이점이 있다.According to the present invention, the change of the O 2 / TCA ratio during dry oxidation during the main oxidation process during the growth of the field oxide film and the addition of TCA in the wet oxidation process reduce the degree of oxidant by HCl, thereby rapidly reducing the field oxide film. Since it is possible to increase the thickness of the field oxide film, it is possible to prevent the reduction of the thickness of the field oxide film, and to reduce the buzz bequee to secure the spacing between unit cells, and to reduce the defects in the field oxide film, thereby improving the electrical characteristics of the semiconductor device. There is an advantage.
Claims (3)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920027043A KR960009096B1 (en) | 1992-12-31 | 1992-12-31 | Manufacturing method of semiconductor device field oxide |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019920027043A KR960009096B1 (en) | 1992-12-31 | 1992-12-31 | Manufacturing method of semiconductor device field oxide |
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| KR940016680A KR940016680A (en) | 1994-07-23 |
| KR960009096B1 true KR960009096B1 (en) | 1996-07-10 |
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| KR1019920027043A KR960009096B1 (en) | 1992-12-31 | 1992-12-31 | Manufacturing method of semiconductor device field oxide |
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