KR960009048A - Method of forming interlayer oxide film of semiconductor device - Google Patents

Method of forming interlayer oxide film of semiconductor device Download PDF

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Publication number
KR960009048A
KR960009048A KR1019940019275A KR19940019275A KR960009048A KR 960009048 A KR960009048 A KR 960009048A KR 1019940019275 A KR1019940019275 A KR 1019940019275A KR 19940019275 A KR19940019275 A KR 19940019275A KR 960009048 A KR960009048 A KR 960009048A
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KR
South Korea
Prior art keywords
oxide film
interlayer oxide
forming
semiconductor device
khz
Prior art date
Application number
KR1019940019275A
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Korean (ko)
Inventor
안희복
이상선
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019940019275A priority Critical patent/KR960009048A/en
Publication of KR960009048A publication Critical patent/KR960009048A/en

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Abstract

반도체 제조공정 중 두 전도층 사이에 층간 산화막을 형성하는 방법에 있어서, 기형성된 전도층 위에 소정의 온도분위기와 소정의 주파수 전원을 공급한 상태에서 테트라에틸오소실리케이트(TEOS)와 산소, 캐리어 가스로 이루곤 가스를 사용하여 플라즈마화합기상증착(PECVD) 방식으로 층간 산화막을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 층간 산화막 형성방법에 관한 것으로, PECVD 방식에서 50KHz 내지 450KHz의 무선주파수 및 캐리어 가스로 이루곤 가스를 사용하여 플라즈마 밀도를 안정화 함으로서 층간 산화막의 균일성및 콘택트 홀(contsct hole) 또는 트렌치내에서 스텝 커버리지(step coverage)를 향상시켜 보이드현상과 커스핑현상 발생을 막아 반도체 소자의 신뢰성을 향상시키는 효과가 있다.A method of forming an interlayer oxide film between two conductive layers in a semiconductor manufacturing process, comprising: tetraethyl orthosilicate (TEOS), oxygen, and a carrier gas on a preformed conductive layer with a predetermined temperature atmosphere and a predetermined frequency power supply. The present invention relates to a method for forming an interlayer oxide film of a semiconductor device, the method comprising: forming an interlayer oxide film by plasma chemical vapor deposition (PECVD) using a gas, which has a radio frequency of 50 KHz to 450 KHz in a PECVD method. By using the carrier gas to stabilize the plasma density, the uniformity of the interlayer oxide layer and the step coverage in the contact hole or trench are improved to prevent voids and cuping phenomenon, thereby preventing the semiconductor device. There is an effect of improving the reliability.

Description

반도체 소자의 층간 산화막 형성방법Method of forming interlayer oxide film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 일실시예에 따라 층간 산화막이 형성된 상태를 나타낸 단면도.1 is a cross-sectional view showing a state in which an interlayer oxide film is formed according to an embodiment of the present invention.

Claims (2)

반도체 제조공정 중 두 전도층 사이에 층간 산화막을 형성하는 방법에 있어서, 기형성된 전도층 위에 소정의 온도분위기가 소정의 주파수 전원을 공급한 상태에서 테트라에틸오소실리케이트(TEOS)와 산소, 캐리어 가스로 아르곤 가스를 사용하여 플라즈마화학기상증착(PECVD)방식으로 층간 산화막(2)을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 반도체 소자의 층간 산화막 형성방법.A method of forming an interlayer oxide film between two conductive layers in a semiconductor manufacturing process, comprising: tetraethyl orthosilicate (TEOS), oxygen, and a carrier gas in a state in which a predetermined temperature atmosphere A method of forming an interlayer oxide film of a semiconductor device, comprising the step of forming an interlayer oxide film (2) by plasma chemical vapor deposition (PECVD) using argon gas. 제1항에 있어서, 상기 소정의 온도는 300℃ 내지 420℃인 것과 소정의 주파수는 50KHz 내지 450KHz인 것을 특징으로 하는 반도체 소자의 층간 산화막 형성방법.The method of claim 1, wherein the predetermined temperature is 300 ° C. to 420 ° C. and the predetermined frequency is 50 KHz to 450 KHz. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940019275A 1994-08-04 1994-08-04 Method of forming interlayer oxide film of semiconductor device KR960009048A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940019275A KR960009048A (en) 1994-08-04 1994-08-04 Method of forming interlayer oxide film of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940019275A KR960009048A (en) 1994-08-04 1994-08-04 Method of forming interlayer oxide film of semiconductor device

Publications (1)

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KR960009048A true KR960009048A (en) 1996-03-22

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KR1019940019275A KR960009048A (en) 1994-08-04 1994-08-04 Method of forming interlayer oxide film of semiconductor device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100724215B1 (en) * 2005-12-28 2007-05-31 동부일렉트로닉스 주식회사 Method for fabricating pecvd teos oxide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100724215B1 (en) * 2005-12-28 2007-05-31 동부일렉트로닉스 주식회사 Method for fabricating pecvd teos oxide

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