KR960008560B1 - Super fine contact hall forming method - Google Patents

Super fine contact hall forming method Download PDF

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Publication number
KR960008560B1
KR960008560B1 KR93010711A KR930010711A KR960008560B1 KR 960008560 B1 KR960008560 B1 KR 960008560B1 KR 93010711 A KR93010711 A KR 93010711A KR 930010711 A KR930010711 A KR 930010711A KR 960008560 B1 KR960008560 B1 KR 960008560B1
Authority
KR
South Korea
Prior art keywords
photoresist
forming method
super fine
fine contact
developing
Prior art date
Application number
KR93010711A
Other languages
Korean (ko)
Other versions
KR950001893A (en
Inventor
Young-Mok Ham
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR93010711A priority Critical patent/KR960008560B1/en
Publication of KR950001893A publication Critical patent/KR950001893A/en
Application granted granted Critical
Publication of KR960008560B1 publication Critical patent/KR960008560B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

depositing a first photoresist (14) on the wafer (6) and exposing the photoresist (14) using phase-reversed mask; developing the exposed photoresist and baking a photoresist (16) which remains after the first developing; depositing a second photoresist (18) and exposing the photoresist (18) using a positive contact hole pattern mask; developing the second photoresist (18) and forming a photoresist form(21) which remains after the second developing.
KR93010711A 1993-06-12 1993-06-12 Super fine contact hall forming method KR960008560B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93010711A KR960008560B1 (en) 1993-06-12 1993-06-12 Super fine contact hall forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93010711A KR960008560B1 (en) 1993-06-12 1993-06-12 Super fine contact hall forming method

Publications (2)

Publication Number Publication Date
KR950001893A KR950001893A (en) 1995-01-04
KR960008560B1 true KR960008560B1 (en) 1996-06-28

Family

ID=19357303

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93010711A KR960008560B1 (en) 1993-06-12 1993-06-12 Super fine contact hall forming method

Country Status (1)

Country Link
KR (1) KR960008560B1 (en)

Also Published As

Publication number Publication date
KR950001893A (en) 1995-01-04

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