KR960008506B1 - Fabricating method of composite semiconductor - Google Patents

Fabricating method of composite semiconductor Download PDF

Info

Publication number
KR960008506B1
KR960008506B1 KR93004820A KR930004820A KR960008506B1 KR 960008506 B1 KR960008506 B1 KR 960008506B1 KR 93004820 A KR93004820 A KR 93004820A KR 930004820 A KR930004820 A KR 930004820A KR 960008506 B1 KR960008506 B1 KR 960008506B1
Authority
KR
South Korea
Prior art keywords
fabricating method
composite semiconductor
ratio
etching solution
protection film
Prior art date
Application number
KR93004820A
Other languages
Korean (ko)
Other versions
KR940022193A (en
Inventor
Won-Sang Lee
Original Assignee
Lg Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Electronics Inc filed Critical Lg Electronics Inc
Priority to KR93004820A priority Critical patent/KR960008506B1/en
Publication of KR940022193A publication Critical patent/KR940022193A/en
Application granted granted Critical
Publication of KR960008506B1 publication Critical patent/KR960008506B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Abstract

The compound semiconductor is etched by the etching solution to which is added 9-11 mole (NH4)2Sx, the acidic mixture of NH4OH, H2O2 and H1O in the ratio of 10:0.5:400, or alkaline etching solution, of H3PO4, H2O2 and H1O in the ratio of 1:1:400, and regulating pH. The compound semiconducor is manufactured by the process of ethching, forming sulfur protection film and removing the sulfur protection film by heat treating or keeping semiconductor for 4-6hrs under 10-8-10-7torr vaccum.
KR93004820A 1993-03-26 1993-03-26 Fabricating method of composite semiconductor KR960008506B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR93004820A KR960008506B1 (en) 1993-03-26 1993-03-26 Fabricating method of composite semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR93004820A KR960008506B1 (en) 1993-03-26 1993-03-26 Fabricating method of composite semiconductor

Publications (2)

Publication Number Publication Date
KR940022193A KR940022193A (en) 1994-10-20
KR960008506B1 true KR960008506B1 (en) 1996-06-26

Family

ID=19352848

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93004820A KR960008506B1 (en) 1993-03-26 1993-03-26 Fabricating method of composite semiconductor

Country Status (1)

Country Link
KR (1) KR960008506B1 (en)

Also Published As

Publication number Publication date
KR940022193A (en) 1994-10-20

Similar Documents

Publication Publication Date Title
ATE64237T1 (en) PROCESS FOR MANUFACTURING BORON AND PHOSPHORUS-DOped SILICON COATINGS FOR SEMICONDUCTOR INTEGRATED CIRCUITS.
NO931097D0 (en) PROCEDURE FOR IMPROVING THE RESISTANCE OF THE INVESTMENT TO WATER WHITE
IT8420586A1 (en) "PROCEDURE FOR THE PRODUCTION OF WATER-SOLUBLE AMMONIUM PHOSPHATES"
CA2165168A1 (en) Method for the treatment of water treatment sludge
DE69636818D1 (en) Method for self-aligned production of implanted areas
ATE300500T1 (en) PRODUCTION OF DICALCIUM PHOSPHATE OR MONOCALCIUM PHOSPHATE
EP0148448A3 (en) Etching method
KR960008506B1 (en) Fabricating method of composite semiconductor
IT1074452B (en) Effective cleaning of silicon semiconductor chips - using hot mixt of conc sulphuric acid and hydrogen peroxide
BR9406352A (en) Process for the manufacture of aminomethanophosphonic acid
FI873107A (en) FOERFARANDE FOER AVLAEGSNANDE AV TUNGMETALLER FRAON SURT, FOSFATINNEHAOLLANDE, VATTENHALTIGT MEDIUM.
IL72104A (en) Process for forming small particles of organic compounds
DE3789067T2 (en) Manufacture of semiconductor devices.
JPS53123070A (en) Impurity diffusing method
JPS53120263A (en) Manufacture of semiconductor device
JPS5262956A (en) Process for treating waste water containing sulfuric acid ion
JPS51130070A (en) Waste water treatment method
JPS5677294A (en) Aluminum compound substance of sucrose sulfate and dihydroxy aluminum allantoinate
AU2979792A (en) Process for removing organic phosphorus compounds and other impurities from dilute sulfuric acid
JPS52100651A (en) Method for urine dry treatment
JPS56161638A (en) Wash-treating method
JPS5541851A (en) Decreasing nitrogen and sulfur compound and cod in waste water
BR8504778A (en) FERTILIZING PROCESS
JPS5639078A (en) Recovery of cyanuric acid from waste containing chloroisocyanuric acid
JPS644025A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20070418

Year of fee payment: 12

LAPS Lapse due to unpaid annual fee