KR960004243Y1 - Apparatus of photoresist layer stripper - Google Patents
Apparatus of photoresist layer stripper Download PDFInfo
- Publication number
- KR960004243Y1 KR960004243Y1 KR2019930006391U KR930006391U KR960004243Y1 KR 960004243 Y1 KR960004243 Y1 KR 960004243Y1 KR 2019930006391 U KR2019930006391 U KR 2019930006391U KR 930006391 U KR930006391 U KR 930006391U KR 960004243 Y1 KR960004243 Y1 KR 960004243Y1
- Authority
- KR
- South Korea
- Prior art keywords
- photosensitive film
- electrode
- wafer
- film removing
- removing apparatus
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Abstract
내용 없음.No content.
Description
제1도는 본 고안에 따른 감광막 제거 장치 구조도.1 is a structural diagram of a photosensitive film removing device according to the present invention.
제2도는 본 고안의 다른 실시예에 따른 감광막 제거 장치 구조도.2 is a structural diagram of a photosensitive film removing apparatus according to another embodiment of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 챔버벽 2 : 지지대1 chamber wall 2 support
3 : 가열부 4 : 냉매순환부3: heating section 4: refrigerant circulation section
5 : 모터 6 : 전극5: motor 6: electrode
7 : 웨이퍼 8 : 냉각장치7: wafer 8: cooling device
본 고안은 반도체 장치 중 감광막 제거 장치에 관한 것으로, 특히 스컴제거(descum) 공정 안정화를 위한 냉각 수단을 더 포함하고 있는 감광막 제거 장치에 관한 것이다.The present invention relates to a photoresist removal device of a semiconductor device, and more particularly, to a photoresist removal device further including cooling means for stabilizing a descum process.
일반적으로 스컴제거 공정이란 감광막 제거 후 잔여 감광막을 O2플라즈마를 이용하여 제거하는 공정으로 낮은 애슁비(ashing rate)가 요구되는데 이 애슁비는 공정온도와 밀접한 관계가 있다.In general, the scum removal process is a process of removing the residual photoresist film using O 2 plasma after removing the photoresist film, and requires a low ashing rate, which is closely related to the process temperature.
종래의 감광막 제거 장치는 웨이퍼가 놓이는 전극 온도를 200~300℃로 가열시킨 후 O2를 플라즈마를 이용하여 감광막을 제거하게 된다.In the conventional photoresist removal apparatus, the electrode temperature on which the wafer is placed is heated to 200 to 300 ° C., and then O 2 is removed using the plasma.
그러나 상기 종래의 스컴제거는 애슁비가 높기 때문에 가열부를 작동시키지 않고 온도를 상온으로 유지하여 공정을 진행해야 한다. 따라서, 온도 제어장치가 작동하지 않음으로 인해 애슁비가 증가하여 소자의 임계면적(critical dimension)이 커져 스컴제거 공정에는 부적합한 문제점이 따랐다.However, since the scum removal of the conventional scum ratio is high, the process must be performed by maintaining the temperature at room temperature without operating the heating unit. As a result, the ash control ratio is increased due to the inability to operate the temperature controller, thereby increasing the critical dimension of the device, which is not suitable for the scum removal process.
상기 문제점을 해결하기 위하여 안출된 본 고안은 웨이퍼가 놓이는 전극의 온도를 0℃ 이하로 조절함으로써 재현성 있는 낮은 애슁비를 얻을 수 있는 스컴제거 공정 안정화를 위한 냉각수단을 더 포함하고 있는 감광막 제거 장치를 제공하는데 그 목적이 있다.The present invention devised to solve the above problems is a photosensitive film removing device further comprises a cooling means for stabilizing the scum removal process to obtain a reproducible low ash ratio by adjusting the temperature of the electrode on which the wafer is placed below 0 ℃ The purpose is to provide.
상기 목적을 달성하기 위하여 본 고안의 감광막 제거 장치는 웨이퍼(7)를 받쳐주되 가열부(3)를 형성하고 있는 전극(6)으로 구성되어지는 감광막 제거 장치에 있어서, 상기 가열부(3)를 갖는 전극(6)에 냉각장치(8)와 연결되어 웨이퍼의 스컴(scum) 제거시 웨이퍼(7)를 냉각하는 냉각수단을 더 포함하여 이루어지는 것을 특징으로 한다.In order to achieve the above object, the photosensitive film removing apparatus of the present invention is a photosensitive film removing apparatus composed of an electrode (6) which supports a wafer (7) and forms a heating portion (3). It is characterized in that it further comprises a cooling means connected to the cooling device (8) to the electrode 6 having a cooling means for cooling the wafer (7) when the scum (scum) of the wafer is removed.
이하, 첨부된 도면 제1도 내지 제2도를 참조하여 본 고안을 상술한다.Hereinafter, the present invention will be described in detail with reference to FIGS. 1 to 2.
우선, 제1도는 본 고안의 일실시예에 따른 직접제어 방법에 의한 감광막 제거 장치 구조도로서 1은 챔버벽, 2는 지지대, 3은 가열부, 4는 냉매순환부, 5는 모터, 6은 전극, 7은 웨이퍼를 각각 나타낸다.First, FIG. 1 is a structural diagram of a photosensitive film removing apparatus according to an embodiment of the present invention, in which 1 is a chamber wall, 2 is a support, 3 is a heating part, 4 is a refrigerant circulation part, 5 is a motor, and 6 is an electrode. And 7 each represent a wafer.
제1도에 도시된 바와 같이 웨이퍼(7)가 놓이는 전극(6)에 가열부(3) 및 냉매순환부(4)를 직접형성함으로써 스컴제거 공정시 냉각장치(8)를 가동시켜 상기 전극(6)에 냉매가 순환되게 하여 웨이퍼(7)의 온도를 0℃ 이하로 전환함으로써 웨이퍼 표면에서 플라즈마 온도 균일성을 안정하게 유지시켜 준다.As shown in FIG. 1, the heating unit 3 and the coolant circulation unit 4 are directly formed on the electrode 6 on which the wafer 7 is placed to operate the cooling device 8 during the scum removal process. The refrigerant is circulated in 6) to change the temperature of the wafer 7 to 0 ° C. or lower, thereby maintaining the plasma temperature uniformity on the wafer surface.
또한, 감광막 제거 공정시는 냉각장치(8)를 정지시키고 모터(5)를 동작시켜 전극(6)에 남아있는 냉매를 냉각장치(8)로 귀환(feedback)시킨 후 가열부(3)를 가동시켜 감광막 제거 조건으로 전환시킨다.In the photoresist removal process, the cooling device 8 is stopped and the motor 5 is operated to feed back the refrigerant remaining in the electrode 6 to the cooling device 8 and then operate the heating unit 3. To switch to photoresist removal conditions.
이어서, 제2도를 참조하여 본 고안의 다른 실시예를 살펴보면, 제2도는 간접제어 방법에 의한 감광막 제거 장치 구조도이다.Next, referring to FIG. 2, another embodiment of the present invention is illustrated in FIG. 2, which is a structure diagram of a photosensitive film removing apparatus by an indirect control method.
제2도에 도시된 바와 같이 웨이퍼(7)가 놓이는 전극(6)에 가열부(3)가 형성되어 있으며, 챔버벽(1) 및 지지대(2)에는 냉매순환부(4)가 연결됨으로써 스컴제거 공정시 챔버벽(1) 및 지지대(2)에 연결된 냉매순환부(4)를 냉각시켜 전극(6) 온도를 0℃ 이하로 조절하여 플라즈마의 온도 상승을 억제한다.As shown in FIG. 2, the heating unit 3 is formed on the electrode 6 on which the wafer 7 is placed, and the coolant circulation unit 4 is connected to the chamber wall 1 and the support 2 to form a scum. During the removal process, the refrigerant circulation portion 4 connected to the chamber wall 1 and the support 2 is cooled to adjust the temperature of the electrode 6 to 0 ° C. or lower to suppress the rise of the plasma temperature.
그리고, 감광막 제거 공정시는 상기 챔버벽(1) 및 지지대(2)에 연결된 냉매순환부(4)의 냉각을 정지시키고 웨이퍼가 놓이는 전극(6)에 형성되어 있는 가열부(3)를 가열시킴으로써 감광막 제거 조건으로 전환할 수 있다.In the photoresist removal process, the cooling of the refrigerant circulation part 4 connected to the chamber wall 1 and the support stand 2 is stopped and the heating part 3 formed on the electrode 6 on which the wafer is placed is heated. It can switch to photoresist removal conditions.
상기와 같이 이루어지는 본 고안에 따른 스컴제거 공정 안정화를 위한 냉각수단을 더 포함하고 있는 감광막 제거 장치는 종래방법인 가열부에 냉매순환부를 부가함으로써 감광막 제거 및 스컴제거 공정에 공용할 수 있는 효과가 있다.The photosensitive film removing apparatus further comprising a cooling means for stabilizing the scum removing process according to the present invention as described above has an effect that can be shared in the photosensitive film removing and scum removing process by adding a refrigerant circulation portion to the heating part of the conventional method. .
특히, 스컴제거 공정시 애슁비와 밀접한 관계가 있는 온도를 0℃ 이하로 조절하여 플라즈마를 안정화 시킴으로써 스컴제거 균일성 및 재현성을 향상시키는 효과가 있다.In particular, by adjusting the temperature closely related to the ash ratio during scum removal process to 0 ℃ or less to stabilize the plasma has the effect of improving the scum removal uniformity and reproducibility.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019930006391U KR960004243Y1 (en) | 1993-04-21 | 1993-04-21 | Apparatus of photoresist layer stripper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019930006391U KR960004243Y1 (en) | 1993-04-21 | 1993-04-21 | Apparatus of photoresist layer stripper |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940025544U KR940025544U (en) | 1994-11-18 |
| KR960004243Y1 true KR960004243Y1 (en) | 1996-05-23 |
Family
ID=19354025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019930006391U KR960004243Y1 (en) | 1993-04-21 | 1993-04-21 | Apparatus of photoresist layer stripper |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR960004243Y1 (en) |
-
1993
- 1993-04-21 KR KR2019930006391U patent/KR960004243Y1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR940025544U (en) | 1994-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5523262A (en) | Rapid thermal annealing using thermally conductive overcoat | |
| KR950001855A (en) | Method and apparatus for controlling particle generation in reaction chamber | |
| JPH1014266A (en) | Electrostatic chucking device and wafer retention/ removal therewith/therefrom | |
| JPS63291419A (en) | Heat treatment device | |
| KR960004243Y1 (en) | Apparatus of photoresist layer stripper | |
| JP4111625B2 (en) | Substrate cooling stand for vacuum processing equipment | |
| JP2005150696A (en) | Heat treatment apparatus and method therefor | |
| KR200161684Y1 (en) | Cooling apparatus of wafer used in manufacturing semiconductor | |
| JPS62281423A (en) | Method and device for dry etching | |
| JPH0445529A (en) | Dry etching | |
| JPH09162176A (en) | Plasma processing system | |
| JPH0982785A (en) | Semiconductor wafer temperature controller | |
| JPH0721954A (en) | Ion beam generating method and electron field ionization type gas phase ion source | |
| KR200156798Y1 (en) | Wafer heating apparatus in semiconductor sputtering device | |
| KR20010017702A (en) | Apparatus for controlling the temperature of a wafer | |
| JPH0456765A (en) | Method for controlling wafer temperature | |
| JPH0529265A (en) | Plasma ashing device | |
| JPH06252094A (en) | Semiconductor manufacture device and semiconductor manufacture | |
| JPH02119132A (en) | Plasma etching system | |
| KR960008672Y1 (en) | Substrate support member for fabricating process apparatus of semiconductor device | |
| KR100312970B1 (en) | Method for reducing defect of semiconductor substrate | |
| KR970004654Y1 (en) | Temperature controller of etching solvent in semiconductor wet-etching device | |
| KR100257859B1 (en) | Method of stripping a photoresist in a semiconductor device | |
| JP2728574B2 (en) | Ashing equipment | |
| KR20030024163A (en) | A wafer transfer apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| REGI | Registration of establishment | ||
| FPAY | Annual fee payment |
Payment date: 20030417 Year of fee payment: 8 |
|
| LAPS | Lapse due to unpaid annual fee |