KR960008672Y1 - Substrate support member for fabricating process apparatus of semiconductor device - Google Patents
Substrate support member for fabricating process apparatus of semiconductor device Download PDFInfo
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- KR960008672Y1 KR960008672Y1 KR2019930018593U KR930018593U KR960008672Y1 KR 960008672 Y1 KR960008672 Y1 KR 960008672Y1 KR 2019930018593 U KR2019930018593 U KR 2019930018593U KR 930018593 U KR930018593 U KR 930018593U KR 960008672 Y1 KR960008672 Y1 KR 960008672Y1
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- substrate support
- semiconductor device
- substrate
- photosensitive resin
- glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
내용 없음.No content.
Description
제1도는 종래의 기술에 의한 감광성 수지의 열처리 장치를 도시한 단면도.1 is a cross-sectional view showing a heat treatment apparatus of a photosensitive resin according to the prior art.
제2도는 본 고안에 의한 감광성수지의 열처리 장치를 도시한 단면도.2 is a cross-sectional view showing a heat treatment apparatus for the photosensitive resin according to the present invention.
제3도는 제2도의 평면도.3 is a plan view of FIG.
제4도는 제2도의 A부분 확대도.4 is an enlarged view of portion A of FIG.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 감광성 수지 2 : 유리기판1 photosensitive resin 2 glass substrate
3 : 기판 지지부 4 : 요홈3: substrate support part 4: groove
본 고안은 반도체 장치에 관한 것으로, 특히 유리를 사용하는 반도체 소자의 제조시 감광성 수지의 열처리 공정에서 발생할 수 잇는 먼지의 발생이나 정전기등에 의한 소자 파괴를 막을 수 있는 반도체 소자 제조장치의 기판 지지부에 관한 것이다.The present invention relates to a semiconductor device, and more particularly, to a substrate support part of a semiconductor device manufacturing apparatus capable of preventing device destruction by dust or static electricity, which may occur in a heat treatment process of a photosensitive resin during manufacturing of a semiconductor device using glass. will be.
기존의 반도체 소자를 제조하기 위한 제조 장치중 감광서 d수지의 열처리 장치는, 주로 사진식각(photolithography)에 이용되며, 제1도에 도시한 바와 같이 감광성 수지(1)를 입힌 유리기판(2)이 열처리되기 위해 기판 지지부(3) 위에 올려지고, 이 기판 지지부(3)의 온도가 유리기판(2)을 통해 감광성 수지(1)에 전해지도록 구성되어 있다.The heat treatment apparatus of the photosensitive paper d resin among manufacturing apparatuses for manufacturing a conventional semiconductor device is mainly used for photolithography, and the glass substrate 2 coated with the photosensitive resin 1 as shown in FIG. The substrate is supported on the substrate support 3 so as to be heat treated, and the temperature of the substrate support 3 is transmitted to the photosensitive resin 1 through the glass substrate 2.
이때 상기 유리기판(2) 위에 감광성 수지를 입히는 공정은, 먼저 회전판(도시하지 않음0 위에 유리기판(2)을 올려두는 제1과정, 상기 유리기판(2)의 뒷면에 흘러내린 감광성 수지를 감광성 수지 제거액을 사용하여 제거하는 제4과정, 상기 감광성 수지(1)가입혀진 유리기판(2)을 기판 지지부(3) 위에 올리는 제5과정, 상기 기판 지지부(3)와 감광성 수지가 입혀진 유리기판(2)의 전면을 진공으로 밀착시키는 제6과정, 상기 기판 지지부(3)가 일정한 온도를 유지하도록 함으로써 상기 유리기판(2)에 입혀진 수지를 열처리하는 제7과정 및 진공을 해체시킨 후 상기 기판 지지부(3)와 유리기판(2)을 분리시키는 제8과정으로 이루어진다.At this time, the process of coating the photosensitive resin on the glass substrate 2, the first step of placing the glass substrate 2 on the rotating plate (not shown 0), the photosensitive resin flowing down on the back of the glass substrate 2 A fourth process of removing using a resin removal liquid, a fifth process of raising the glass substrate 2 to which the photosensitive resin 1 is joined on the substrate support 3, and a glass substrate coated with the substrate support 3 and the photosensitive resin ( A sixth process of closely contacting the entire surface of 2) with a vacuum, a seventh process of heat-treating the resin coated on the glass substrate 2 by maintaining the substrate support 3 at a constant temperature, and the substrate support after disassembling the vacuum. (3) and the eighth process of separating the glass substrate (2).
그러나 상기와 같은 감광성 수지의 열처리 장치는, 상기 제4과정에서 상기 유리기판(2)의 뒷면에 흘러내린 감광성 수지는 제거하였으나 유리기판(2)의 측면에 감광성 수지가 남아 있게 됨으로써, 뒷면의 감광성 수지 제거액과 측면의 감광성 수지가 반응하게 되고, 이에 따라 농도가 묽어진 감광성 수지 제거액이 다시 뒷면의 주변에 미량 흘러내림으로써, 상기 유리기판(2)과 기판 지지부(3)를 밀착시키는 제6과정에서 기판 지지부(3) 위에 미량의 감광성 수지가 전사되게 되며, 이 기판 지지부(3) 위에 전사된 감광성수지는 기판 지지부(3)에 의해 휘발성분이 날아가고 나면 작은 입자로 분해되어 기판 지지부(3) 주변을 오염시켜 패턴이 불량해질 뿐만 아니라, 상기 기판 지지부(3)와 유리기판(2)을 분리시키는 제8과정에서, 분리시 강한 유도정전기가 발생하여 이 유도 정전기에 의한 기판 지지부(3)와 유리기판(2) 사이의 방전현상 때문에 반도체 소자가 파괴되는 문제점이 있다.However, in the heat treatment apparatus of the photosensitive resin as described above, the photosensitive resin flowing down on the rear surface of the glass substrate 2 is removed in the fourth process, but the photosensitive resin remains on the side surface of the glass substrate 2, thereby preventing the photosensitive resin on the rear surface. The resin removal liquid reacts with the photosensitive resin on the side surface, whereby a thinner concentration of the photosensitive resin removal liquid flows again to the periphery of the back surface, thereby bringing the glass substrate 2 and the substrate support part 3 into close contact with each other. In this case, a small amount of the photosensitive resin is transferred onto the substrate support 3, and the photosensitive resin transferred onto the substrate support 3 is decomposed into small particles after the volatiles are blown off by the substrate support 3, thereby surrounding the substrate support 3. In addition to the contamination of the pattern is not only poor, in the eighth process of separating the substrate support 3 and the glass substrate 2, a strong induction static There is a problem that the semiconductor element is destroyed due to the discharge phenomenon between the substrate support 3 and the glass substrate 2 by the induced static electricity.
일례로서 두께가 1mm인 상태에서 기판 지지부와 유리를 분리시키게 되면 분리순간 정전기에 의한 유도전압이 1KV정도만 유도되어도 방전이 일어나 유리기판 윗면의 소자가 파괴되는 것이다.As an example, when the substrate support and the glass are separated in the state of 1 mm in thickness, even if the induced voltage of about 1 KV is induced, the discharge occurs and the element on the upper surface of the glass substrate is destroyed.
또한, 상기와 같은 문제점을 열처리 공정 뿐만 아니라 열처리된 유리기판을 상온으로 냉각시키기 윗판 밀찰식 냉각판을 사용하는 경우에도 발생한다.In addition, the above-mentioned problems occur even when using the top plate sealing cold plate to cool the heat-treated glass substrate to room temperature as well as the heat treatment process.
따라서, 본 고안의 목적은 상기와 같은 문제점을 해결하기 위하여 열처리 또는 냉각처리되는 피처리물을 올려놓는 기판 지지부의 소정부분에 요홈을 형성함으로써 피처리물의 가장자리와 기판을 분리하여 냉각처리 또는 열처리에 의한 오염 및 기판과 피처리물의 분리시 발생할 수 있는 정전기의 방전현상에 의한 소자의 파괴를 방지할 수 있는 반도체 소자 제조장치의 기판 지지부를 제공하는 것이다.Accordingly, an object of the present invention is to form a groove in a predetermined portion of the substrate support on which a workpiece to be heat treated or cooled is placed in order to solve the above problems, thereby separating the edge of the workpiece from the substrate and subjecting it to a cold treatment or heat treatment. It is to provide a substrate support of a semiconductor device manufacturing apparatus that can prevent the destruction of the device by the discharge caused by the electrostatic discharge that may occur during contamination and separation of the substrate and the workpiece.
이하, 첨부도면을 참조하여 본 고안을 좀더 상세하게 설명하고자 한다.Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
본 고안의 실시례로서, 감광성수지의 열처리 장치는 제2도 및 제3도에 도시한 바와 같이, 기판 지지부(3) 표면과 유리기판(2)의 가장자리, 즉 주변부의 윗면에 입혀진 감광성 수지가 접촉하지 않도록 기판 지지부에 각각()형 유자()형 또는 브리자()형 요홈(4)을 형성하여 상기 요홈(4)의 내측 기판 지지부 크기(7)는 상기 유리기판(2) 보다 작고, 외측 기판 지지부 크기(9)는 유리기판(2) 보다 크게 형성하여 또한 상기 요홈(4)의 깊이와 유기기판(2)의 두께가 각각 1mm라면, 제4도에 도시한 유리기판(2)의 표면과 기판 지지부사이의 거리d는 2mm가 되므로, 종래보다 요홈(4)의 깊이 만큼 멀어지게 된다.As an embodiment of the present invention, the heat treatment apparatus of the photosensitive resin is a photosensitive resin coated on the surface of the substrate support 3 and the edge of the glass substrate 2, that is, the upper surface of the peripheral portion, as shown in FIG. Each of the substrate supports to avoid contact ) Citron ( ) Or Brea ( ) To form a groove 4 so that the inner substrate support size 7 of the groove 4 is smaller than the glass substrate 2, and the outer substrate support size 9 is larger than the glass substrate 2. If the depth of the groove 4 and the thickness of the organic substrate 2 are 1 mm, respectively, the distance d between the surface of the glass substrate 2 and the substrate support portion shown in FIG. 4 is 2 mm. ) As far as depth.
따라서, 본 고안에 의하면 유리기판의 주변부가 요홈이 형성된 기판 지지부 위에서열처리되므로 감광성 수지의 기판 기지부 전사에 의한 먼지 발생을 방지하여 정확한 패턴을 형성할 수 있으며, 유리기판의 표면과 기판 지지부 사이의 거리가 멀어져 열처리공정중에 밀착시킨 유리기판과 기판 지지부를 분리하여도 유도정전기를 억제할 수 있기 때문에 이로 인한 소자 파괴를 줄임으로써 감광성 수지 열처리 공정을 이용하는 사진식각의 수율을 높일 수 있다.Therefore, according to the present invention, since the periphery of the glass substrate is heat-treated on the substrate support portion in which the groove is formed, it is possible to form an accurate pattern by preventing dust generation due to the transfer of the substrate base portion of the photosensitive resin, and between the surface of the glass substrate and the substrate support portion. Since the induction static electricity can be suppressed even when the glass substrate and the substrate support portion which are in close contact with each other during the heat treatment process are separated from each other, the yield of the photo-etching process using the photosensitive resin heat treatment process can be increased by reducing the device destruction.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019930018593U KR960008672Y1 (en) | 1993-09-16 | 1993-09-16 | Substrate support member for fabricating process apparatus of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019930018593U KR960008672Y1 (en) | 1993-09-16 | 1993-09-16 | Substrate support member for fabricating process apparatus of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950010202U KR950010202U (en) | 1995-04-24 |
| KR960008672Y1 true KR960008672Y1 (en) | 1996-10-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019930018593U KR960008672Y1 (en) | 1993-09-16 | 1993-09-16 | Substrate support member for fabricating process apparatus of semiconductor device |
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| Country | Link |
|---|---|
| KR (1) | KR960008672Y1 (en) |
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1993
- 1993-09-16 KR KR2019930018593U patent/KR960008672Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR950010202U (en) | 1995-04-24 |
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